N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7000 been de

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2N7000
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7000 been designed minimize on-state resistance while provide rugged, reliable, fast switching performance. used most applications requiring 400mA deliver pulsed currents product particularly suited voltage, current applications such small servo motor control, power MOSFET gate drivers, other switching applications
MOSFET
FEATURES
*High density cell design RDS(ON) *Voltage controlled small signal switch *Rugged reliable *High saturation current capability SOURCE GATE
TO-92
DRAIN
ABSOLUTE MAXIMUM RATINGS Ta=25°C
PARAMETER
Drain-Source Voltage Drain-Gate Voltage(RGS1M) Gate -Source Voltage-Continuous -Non Repetitive (tp<50µs) Maximum Drain Current-Continuous -Pulsed Maximum Power Dissipation Derated above 25°C Operating Storage Temperature Range Maximum Lead Temperature Soldering Purposes, 1/16" from Case Seconds TJ,TSTG
SYMBOL
VDSS VDGR VGSS
RATINGS
+150
UNIT
mW/°C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-to-Ambient
SYMBOL
RATINGS
312.5
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-064,A
2N7000
ELECTRICAL CHARACTERISTICS =25°C, unless otherwise noted)
PARAMETER
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage, Forward Gate-Body leakage Reverse CHARACTERISTICS (Note) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) VGS(th) =VGS ID=250A =10V, ID=500mA TJ=100°C =5.0V, ID=50mA TJ=100°C Drain-Source On-Voltage On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time toff Ciss Coss Crss VDD=30V, RL=150, ID=200mA, VGS=10V, RGEN=25 VDD=30V, RL=150, ID=200mA, VGS=10V, RGEN=25 DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, Is=115mA(Note 0.88 VDS=25V,VGS=0V, f=1.0MHz VDS(ON) ID(ON) 10V, ID=500mA 5.0V, ID=50mA VGS=10V, VDS2VDS(on) VDS2VDS(on), ID=200mA 0.09 2700 BVDSS IDSS IGSSF IGSSR VGS=0V,ID=10 VDS=60V, TJ=125°C =20V, VDS=0V =-20V, VDS=0V
MOSFET
SYMBOL CONDITIONS. UNITS
-100 13.5 13.5 3.75
Note: Pulse Test: Pulse Width300s, Duty Cycle2.0%
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-064,A
2N7000
Figure On-Region Characteristics
VGS=10V 9.0V RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID,DRAIN-SOURCE CURRENT
MOSFET
Figure On-Resistance Varisation with Gate Voltage Drain Current
VGS= 4.0V
VDS,DRAIN-SOURCE VOLTAGE
ID,DRAIN CURRENT
Figure On-Resistance Varisation with Temperature
RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V ID=500mA RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.75 1.25 0.75
Figure On-Resistance Varisation with Drain Current Temperature
VGS=10V TJ=125°C 25°C -55°C
TJ,JUCTION TEMPERATURE (°C)
ID,DRAIN CURRENT
Figure 5.Transfer Characteristics
VDS=10V Vth,NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE -55°C 25°C 125°C 1.05 0.95 0.85
Figure Gate Threshold Varisation with Temperature
VDS=VGS ID=1mA
ID,DRAIN CURRENT
VGS,GATE SOURCE VOLTAGE
TJ,JUCTION TEMPERATURE (°C)
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-064,A
2N7000
Figure7. Breakdown Voltage Varisation with Temperature
BVDSS,NORMALIZED DRAIN-SOURCE VREAKDOWN VOLTAGE IS,REVERSE DRAIN CURRENT(A) 1.075 1.05 1.025 0.975 0.95 0.925 ID=250A TJ=125°C 25°C VGS=0V
MOSFET
Figure Body Diode Forward Voltage Varisation with Temperature
0.01 0.005 0.001
-55°C
TJ,JUCTION TEMPERATURE (°C)
VsD,BODY DIODE FORWARD VOLTAGE
Figure9.Capacitance Characteristics
CAPACITANCE(pF) Ciss Crss Coss VGS, GATE-SOURCE VOLTAGE(V)
Figure10. Gate Charge Characteristics
VDS=25V ID=500mA 115mA 280mA
VGS=0V f=1MHz
VDS,DRAIN SOURCE VOLTAGE
Qg,GATE CHARGE(nC)
Figure11
Figure12. Switching Waveforms
toff td(off)
RGEN VOUT
td(on)
Output ,Vout
Inverted
Input ,Vin
Pulse Width
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-064,A
2N7000
Figure Maximum Safe Operating Area
ID,DRAIN CURRENT(A)
imit
MOSFET
0.05 VGS=10V SINGLE PULSE TA=25
0.01 0.005
VDS,DRAIN SOURCE VOLTAGE
Figure Transient Thermal Response Curve
0.05 0.02 0.01 0.0001 0.001 0.01 (t)= RJA= (see Datasheet) Ta=P* Duty Cycle, P(pk)
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-064,A

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