SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE VOLTS CURRENT AMPERES

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SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE VOLTS CURRENT AMPERES

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ES1AB thru ES1JB
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE VOLTS CURRENT AMPERES
SMB/DO-214AA
.075(1.91) .083(2.11) .130(3.30) .155(3.94)
.160(4.06) .185(4.70)
.006(.152) .012(.305)
.083(2.13) .096(2.44) .030(0.76) .050(1.27) .004(.102) .008(.203)
.200(5.08) .220(5.59)
Dimensions inches (millimeters)
FEATURES
surface mount applications profile package Buit-in strain relief Easy pick place Superfast recovery times high efficiency Plastic package Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction High temperature soldering 260oC/10seconds terminals free product available above meet RoHS Environment substance directive request
MECHANICAL DATA
Case JEDEC DO-214AA molded plastic Terminals Solder plated, solderable MIL-STD-750, Method 2026 Polarity Indicated cathode band Standard packaging 16mm tape (EIA-481) Weight 0.003 ounce, 0.093grams
MAXIMUM RATIXGS ELECTRICAL CHARACTERISTICS
Ratings 25oC ambient temperature unless otherwise specified Single phase, half wave, 60Hz, resistive inductive load capacitive load, derate current
SYMBOL ES1AB Maximum Repetitive Peak Reverse Voltage Maximum Voltage Maximum Blocking Voltage Maximum Average Forward Rectified Current =1000C Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed Rated Load (JEDEC Method) Maximum Instantaneoue Forward Voltage 1.0A Maximum Reverse Current @TJ=250C Rated Blocking Voltage @TJ=1000C Maximum Reverse Recovery Time (NOTE Typical Junction Capacitance (NOTE Typical Thermal Resistance (NOTE Operating Storage Temperature Range VRRM VRMS I(AV) IFSM
ES1BB
ES1CB ES1DB
ES1EB ES1GB
ES1JB
UNITS
Volts Volts Volts Amps Amps
0.95
1.25
Volts
TSTG
+150
NOTES Rverse Recovery Test Condibons IF=0.5A, R=1.0A, RR=0.25A Measured applied reverse Voltag 4.0VDC 8.0mm2 (.013mm thick) land areas
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ES1AB thru ES1JB
SURFACE MOUNT SUPERFAST RECTIFIER
RATING CHARACTERISTICS CURVES ES1AB THRU ES1JB
Fig. REVERSE RECOVERY TIME CHARACTERISTIC TEST CIRCUIT DIAGRAM ES1A THRU ES1G
Noninductive Noninductive
Fig. MAXIMUM AVERAGE FORWARD CURRENT RATING
AVERAGE FORWARD CURRENT, AMPERES
SINGLE PHASE HALF 60HZ RESISTIVE INDUCTIVE LOAD P.C.B MOUNTED 0.315x0.315"(8.0x8.0mm) COPPER AREAS
+0.5A
PULSE GENERATOR NOTE
(approx)
D.U.T.
-0.25
NONInductive
OSCILLOSCOPE NOTE
NOTES:1. Rise Time=7ns max. Input Impedance=1 megohm. 22pF Rise Time=10ns max. Source Impedance=50 Ohms.
-1.0 TIME BASE 10ns/cm
LEAD TEMPERATURE,
Fig. TYPICAL REVERSE CHARACTERISTICS
1000 IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
Fig. TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, AMPERES
TJ=125C
ES1AB
TJ=75C
ES1JB ES1EB
TJ=25C
0.01
TJ=25C
PIV, VOLTS
0.001 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. MAXIMUM NON-REPETITIVE SURGE CURRENT
8.3ms SINGLE HALF SINCE-WAVE JEDEC METHOD
Fig. TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,
TJ=25C f=1.0MHZ Vslg=50mVp-p
PEAK FORWARD SURGE CURRENT, AMPERES
NUMBER CYCLES 60Hz
REVERSE VOLTAGE, VOLTS
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SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE VOLTS CURRENT AMPERES

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