2SD1615, 1615A Silicon Transistor D10198JJ5V0DS00 March 2006
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2SD1615, 1615A
Silicon Transistor
D10198JJ5V0DS00 March 2006 CP(K)
1985
2SD1615, 1615A
25°C
SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) pulse
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Collector Current
2SD1615A
0.05
2SD1615
0.02 0.01
Ambient Temperature
Collector Emitter Voltage COLLECTOR CURRENT BASE EMITTER VOLTAGE
COLLECTOR CURRENT COLLECTOR EMITTER VOLTAGE
Collector Current
Collector Current
Collector Emitter Voltage CURRENT GAIN COLLECTOR CURRENT
VCE(sat) Collector Saturation Voltage COLLECTOR BASE SATURATION VOLTAGE COLLECTOR CURRENT
VCE(sat) Collector Saturation Voltage VBE(sat) Base Saturation Voltage
1000
0.05 0.02 0.01 0.02 0.05
VBE(sat)
Current Gain
0.01 0.02 0.05
Collector Current
Collector Current
D10198JJ5V0DS
2SD1615, 1615A
GAIN BANDWIDTH PRODUCT EMITTER CURRENT 1000
OUTPUT CAPCITANCE COLLECTOR BASE VOLTAGE
Gain Bandwidth Product
0.01 0.02 0.05 Collector Current
Output Capacitance
Collector Base Voltage
SWITCHING TIME COLLECTOR CURRENT 10.IBI -10.IB2 VBE(off) Duty Cycle tstg
Switching Time
0.05
0.01 0.02 0.05 Collector Current
D10198JJ5V0DS
2SD1615, 1615A
20063 OAAV NECNEC
M8E02.11
211-86681753 044(435)5111
http://www.necel.co.jp/
9:0012:00 1:005:00
044-435-9494 info@necel.com
NECNEC
C04.2T
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