Medium Power AlGaAs/InGaAs PHEMT June 2006 +30.0 typical Output P

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Medium Power AlGaAs/InGaAs PHEMT June 2006 +30.0 typical Output P

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MwT-PH8
Medium Power AlGaAs/InGaAs PHEMT June 2006
+30.0 typical Output Power 10.0 typical Small Signal Gain typical 1200 Micron Refractory Metal/Gold Gate Sorted into Idss Ranges Excellent High Power, Gain, High Power Added Efficiency Ideal Commercial, Military, Hi-Rel Space Applications
Chip Dimensions: microns Chip Thickness: microns
Description:
MwT-PH8 AlGaAs/InGaAs PHEMT device whose nominal micron gate length 1200 micron gate width make ideally suited applications requiring high-gain power frequency range with power outputs ranging from 1000 milli-watts. device equally effective either wideband (e.g. GHz) narrow-band applications. chip produced using MwT's reliable metal systems devices from each wafer screened insure reliability. chips passivated using MwT's patented "Diamond-Like Carbon" process increased durability.
Electrical Specifications:
SYMBOL P1dB PARAMETERS CONDITIONS Output Power Compression Vds=7.0 Ids=0.6xIDSS=240 Small Signal Gain VDS=7.0 Ids=0.6xIDSS=240 Power Added Efficiency P1dB VDS=7.0 Ids=0.6xIDSS=240 Recommended IDSS Range Optimum P1dB
FREQ UNITS 29.0 30.0
IDSS
10.0 280460
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH8
Medium Power AlGaAs/InGaAs PHEMT June 2006
Specifications:
SYMBOL IDSS BVGSO BVGDO
UNITS -6.0 -10.0 -1.2 -12.0 -13.0 -2.5
PARAMETERS CONDITIONS Saturated Drain Current Vds=4.0 Vgs=0.0 Transconductance Vds=2.5 Vgs=0.0 Pinch-off Voltage Vds=3.0 Ids=8.0 Gate-to-Source Breakdown Voltage Igs= -1.4 Gate-to-Drain Breakdown Voltage Igd= -1.4 Chip Thermal Resistance
Overall depends case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Capacitance Drain Inductance Gate Bond Wire Inductance Gate Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time 0.30 0.055 0.15 0.20 0.12 0.25 0.20 2.50 4.00 0.13
VALUE psec
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH8
Medium Power AlGaAs/InGaAs PHEMT June 2006
MwT-PH8 DUAL BIAS
MwT-PH8 SELF BIAS
MAXIMUM RATINGS
Symbol Parameter Drain Source Volt. Channel Temperature Storage Temperature Input Power Total Power Dissipation Units Cont Max1 +150 to+150 2700 Absolute Max2 +175 +175 3300
Notes: Exceeding these limits continuous operation reduce mean-time- to-failure below design goal. Exceeding these limits cause permanent damage.
SELECTION BIN# IDSS (mA)
240260 260280 280300 300320 320340 340360 360380 380400 400420 420440 440460 460480 480500 500520
ACCURACY STATEMENT: effects temperature, loading probe varnishing, IDSS from wafer" probing device differ After been attached proper heat sink tested circuit. Because aforementioned effects, IDSS distribution deviate much within range identified label Each shipping container, bins within selected range.
ORDERING INFORMATION:
When placing order inquiring, please specify range, wafer number, known, visual screening level required. details Selection Safe Handling Procedure please supplementary information available website www.mwtinc.com
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006

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