Medium Power AlGaAs/InGaAs PHEMT June 2006 +24.0 typical Output P

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Medium Power AlGaAs/InGaAs PHEMT June 2006 +24.0 typical Output P

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MwT-PH7
Medium Power AlGaAs/InGaAs PHEMT June 2006
+24.0 typical Output Power 13.5 typical Small Signal Gain typical Micron Refractory Metal/Gold Gate Sorted into Idss Ranges Excellent High Power, Gain, High Power Added Efficiency Ideal Commercial, Military, Hi-Rel Space Applications
Chip Dimensions: microns Chip Thickness: microns
Description:
MwT-PH7 AlGaAs/InGaAs PHEMT device whose nominal micron Gate length micron gate width make ideally suited applications requiring high-gain medium power frequency range. device equally effective either wideband (e.g. GHz) narrow-band applications. chip produced using MwT's reliable metal systems devices from each wafer screened insure reliability. chips passivated using MwT's patented "Diamond-Like Carbon" process increased durability.
Electrical Specifications:
SYMBOL P1dB IDSS PARAMETERS CONDITIONS Output Power Compression Vds=6.0 Ids=0.75xIDSS=60 Small Signal Gain Vds=6.0 Ids=0.75xIDSS=60 Power Added Efficiency P1dB Vds=7.0 Ids=0.75xIDSS=60 Recommended IDSS Range Optimum P1dB
FREQ UNITS 22.0 12.0 24.0 13.5 10.0 58110
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH7
Medium Power AlGaAs/InGaAs PHEMT June 2006
Specifications:
SYMBOL
UNITS -5.0 -10.0 -1.2 -8.0 -13.0 160-200* -2.5
PARAMETERS CONDITIONS Saturated Drain Current IDSS Vds=3.0 Vgs=0.0 Transconductance Vds=2.5 Vgs=0.0 Pinch-off Voltage Vds=3.0 Ids=1.0 Gate-to-Source Breakdown Voltage BVGSO Igs= -0.3 Gate-to-Drain Breakdown Voltage BVGDO Igd= -0.3 Thermal MwT-PH7 Chip Resistance MwT-PH770, PH773 Overall depends case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Capacitance Drain Inductance Gate Bond Wire Inductance Gate Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time
VALUE 2.60 0.025 0.070 3.67 0.027 0.159 0.089 0.050 0.20 0.50 6.00 0.03 90.0 3.02 psec
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH7
Medium Power AlGaAs/InGaAs PHEMT June 2006
MwT-PH7 DUAL BIAS
MwT-PH7 SELF BIAS
MAXIMUM RATINGS
Symbol Parameter Drain Source Voltage Channel Temperature Storage Temperature Input Power Total Power Dissipation Units Cont Max1 +150 to+150 Absolute Max2 +175 +175 1000
Notes: Exceeding these limits continuous operation reduce mean-time- to-failure below design goal. Exceeding these limits cause permanent damage.
SELECTION BIN# IDSS (mA)
5054 5458 5862 6266 6670 7074 7478 7882 8286 8690 9094 9498 98102 102106 106110 110114 114118 118122
ACCURACY STATEMENT: effects temperature, loading probe varnishing, IDSS from wafer" probing device differ After been attached proper heat sink tested circuit. Because aforementioned effects, IDSS distribution deviate much within range identified label Each shipping container, bins within selected range.
ORDERING INFORMATION:
When placing order inquiring, please specify range, wafer number, known, visual screening level required. details Selection Safe Handling Procedure please supplementary information available website www.mwtinc.com. package information, please supplementary application note format clicking located website.
Chip Package Package
MwT-PH7 MwT-PH770 MwT-PH773
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006

Medium Power AlGaAs/InGaAs PHEMT June 2006 +24.0 typical Output P

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