High Gain, Dual Gate AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2
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MwT-PH5
High Gain, Dual Gate AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2006
18.0 typical Small Signal Gain +20.0 typical Output Power Micron Refractory Metal/Gold Gate Sorted into Idss Ranges Excellent High Gain Medium Power Applications Ideal Commercial, Military, Hi-Rel Space Applications
Chip Dimensions: microns Chip Thickness: microns
Description:
MwT-PH5 dual gate AlGaAs/InGaAs PHEMT device whose nominal micron gate length micron gate width make ideally suited applications requiring high-gain power frequency range. device equally effective either wideband (e.g. GHz) narrow-band applications. chip produced using MwT's reliable metal systems devices from each wafer screened insure reliability. chips passivated using MwT's patented "Diamond-Like Carbon" process increased durability.
Electrical Specifications:
SYMBOL P1dB PARAMETERS CONDITIONS Output Power Compression Vds=7.0 Ids=0.6xIDSS=48 Small Signal Gain VDS=7.0 Ids=0.6xIDSS=48 Power Added Efficiency P1dB VDS=7.0 Ids=0.6xIDSS=48 Optimum Noise Figure Vds=3.0 Ids=20 Small Signal Gain Vds=3.0 Ids=20 Recommended IDSS Range Optimum P1dB
FREQ UNITS 18.0 20.0
NFopt IDSS
15.0
18.0 12.0 40120
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH5
High Gain, Dual Gate AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2006
UNITS °C/W -6.0 -10.0 -1.2 -12.0 -13.0 150* -2.5
Specifications:
SYMBOL IDSS BVGSO BVGDO
PARAMETERS CONDITIONS Saturated Drain Current Vds=3.0 Vgs=0.0 Transconductance Vds=2.5 Vgs=0.0 Pinch-off Voltage Vds=3.0 Vgs2=0V Ids=0 Gate-to-Source Breakdown Voltage Igs= -0.4 Gate-to-Drain Breakdown Voltage Igd= -0.4 Chip Thermal Resistance
Overall depends case mounting
MAXIMUM RATINGS
Symbol Parameter Drain Source Voltage Channel Temperature Storage Temperature Input Power Total Power Dissipation Units Cont Max1 +150 to+150 Absolute Max2 +175 +175 1000
Notes: Exceeding these limits continuous operation reduce mean-time- to-failure below design goal. Exceeding these limits cause permanent damage.
ORDERING INFORMATION:
When placing order inquiring, please specify range, wafer number, known, visual screening level required. details Selection Safe Handling Procedure please supplementary information available website www.mwtinc.com.
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
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