Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007 +31.0

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Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007 +31.0

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MwT-PH16A
Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007
+31.0 Output Power Small Signal Gain 0.25 1600 Micron Refractory Metal/Gold Gate Sorted into Idss Ranges Excellent High Power, Gain, High Power-Added-Efficiency Applications Ideal Commercial, Military, Space Applications Chip Dimensions: 1126 microns Chip Thickness: microns dimensions microns
Description:
MwT-PH16A AlGaAs/InGaAs pHEMT device whose nominal 0.25 micron gate length 1600 micron gate width make ideally suited applications requiring high-gain high power device equally effective either wideband (e.g. GHz) narrow-band applications Radar, Instrumentation Communications equipment
Electrical Specifications:
SYMBOL P1dB PARAMETERS CONDITIONS Output Power Compression Vds=8.0 Ids=0.6xIDSS Small Signal Gain Vds=8.0 Ids=0.6xIDSS Power Added Efficiency P1dB VdS=8.0 Ids=0.6xIDSS
FREQ F=12 F=18 F=12 F=18 UNITS 29.0 31.0 31.0 11.0
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2007 Page Revised June 2007
MwT-PH16A
Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007
UNITS °C/W -6.0 -10.0 -1.2 -8.0 -13.0 -2.5
Specifications:
SYMBOL IDSS BVGSO BVGDO
PARAMETERS CONDITIONS Saturated Drain Current Vds=2.0 Vgs=0.0 Transconductance Vds=2.0 Vgs=0.0 Pinch-off Voltage Vds=3.0 Ids=2.0 Gate-to-Source Breakdown Voltage Igs= -2.0 Gate-to-Drain Breakdown Voltage Igd= -2.0 Thermal Resistance
Overall depends case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Capacitance Drain Inductance Gate Bond Wire Inductance Gate Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time 0.13 0.025 0.25 0.027 0.050 0.20 2.50 0.30 0.10 400.0
VALUE psec
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2007 Page Revised June 2007
MwT-PH16A
Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007
MAXIMUM RATINGS
Symbol Parameter Drain Source Volt.age Channel Temperature Storage Temperature Input Power Total Power Dissipation Units Cont Max1 +150 to+150 2000 Absolute Max2 +175 +175 1000 2400
Notes: Exceeding these limits continuous operation reduce mean-time- to-failure below design goal. Exceeding these limits cause permanent damage.
SELECTION
BIN# IDSS (mA)
300350 350400 400450 450500 500550 550600
ACCURACY STATEMENT: effects temperature, loading probe varnishing, IDSS from wafer" probing device differ After been attached proper heat sink tested circuit. Because aforementioned effects, IDSS distribution deviate much within range identified label Each shipping container, bins within selected range.
ORDERING INFORMATION:
CHIP Model Number MwT-PH16A
When placing order inquiring, please specify range, wafer number, known, visual screening level required. details Selection Safe Handling Procedure please supplementary information available website www.mwtinc.com. Contact factory availability packages.
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2007 Page Revised June 2007

Power AlGaAs/InGaAs PHEMT Preliminary Data Sheet June 2007 +31.0

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