Medium Power AlGaAs/InGaAs PHEMT June 2006 +30.0 typical Output P

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Medium Power AlGaAs/InGaAs PHEMT June 2006 +30.0 typical Output P

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MwT-PH16
Medium Power AlGaAs/InGaAs PHEMT June 2006
+30.0 typical Output Power 11.5 typical Small Signal Gain typical Micron Refractory Metal/Gold Gate Sorted into Idss Ranges Excellent High Power, Gain, High Power Added Efficiency Ideal Commercial, Military, Hi-Rel Space Applications
Chip Dimensions: 1,067 microns Chip Thickness: microns
Description:
MwT-PH16 AlGaAs/InGaAs PHEMT device whose nominal micron gate length micron gate width make ideally suited applications requiring high-gain power frequency range with power outputs ranging from 1000 milli-watts. device equally effective either wideband (e.g. GHz) narrow-band applications. chip produced using MwT's reliable metal systems devices from each wafer screened insure reliability. chips passivated using MwT's patented "Diamond-Like Carbon" process increased durability.
Electrical Specifications:
SYMBOL P1dB PARAMETERS CONDITIONS Output Power Compression Vds=7.0 Ids=0.75xIDSS=195 Small Signal Gain VDS=7.0 Ids=0.75xIDSS=195 Power Added Effiency P1dB VDS=7.0 Ids=0.75xIDSS=195 Recommended IDSS Range Optimum P1dB
FREQ UNITS 28.5 30.0
IDSS
10.0
11.5 180315
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH16
Medium Power AlGaAs/InGaAs PHEMT June 2006
Specifications:
SYMBOL IDSS BVGSO BVGDO
UNITS -6.0 -10.0 -1.2 -12.0 -13.0 -2.5
PARAMETERS CONDITIONS Saturated Drain Current Vds=4.0 Vgs=0.0 Transconductance Vds=2.5 Vgs=0.0 Pinch-off Voltage Vds=3.0 Ids=3.0 Gate-to-Source Breakdown Voltage Igs= -1.0 Gate-to-Drain Breakdown Voltage Igd= -1.0 Chip Thermal Resistance
Overall depends case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Capacitance Drain Inductance Gate Bond Wire Inductance Gate Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time 0.60 0.04 0.10 1.00 0.20 0.09 0.05 0.50 0.30 1.60 3.60 0.10 1.90
VALUE psec
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006
MwT-PH16
Medium Power AlGaAs/InGaAs PHEMT June 2006
MwT-PH16 DUAL BIAS
MwT-PH16 SELF BIAS
MAXIMUM RATINGS
Symbol Parameter Drain Source Volt. Channel Temperature Storage Temperature Input Power Total Power Dissipation Units Cont Max1 +150 to+150 2700 Absolute Max2 +175 +175 3300
Notes: Exceeding these limits continuous operation reduce mean-time- to-failure below design goal. Exceeding these limits cause permanent damage.
SELECTION BIN# IDSS (mA)
150165 165180 180195 195210 210225 225240 240255 255270 270285 285300 300315 315330 330345 345360
ACCURACY STATEMENT: effects temperature, loading probe varnishing, IDSS from wafer" probing device differ After been attached proper heat sink tested circuit. Because aforementioned effects, IDSS distribution deviate much within range identified label Each shipping container, bins within selected range.
ORDERING INFORMATION:
When placing order inquiring, please specify range, wafer number, known, visual screening level required. details Selection Safe Handling Procedure please supplementary information available website www.mwtinc.com
MicroWave Technology, Inc. IXYS Company, 4268 Solar Way, Fremont, 94538 510-651-6700 510-651-2208 www.mwtinc.com Data contained herein subject change without notice. rights reserved 2006

Medium Power AlGaAs/InGaAs PHEMT June 2006 +30.0 typical Output P

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