2SK1492 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK1492 N

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2SK1492 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK1492 N

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FIELD EFFECT TRANSISTOR
2SK1492
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK1492 N-Channel Field Effect Transistor designed high voltage switching applications.
FEATURES
on-state resistance RDS(on) MAX. (VGS input capacitance Ciss 3000 TYP. Built-in gate protection diodes High avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±140 +150 52.5 2500
Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document D18443EJ2V0DS00 (2nd edition) (Previous TC-2396) Date Published November 2006 CP(K) Printed Japan
1993, 2006
mark shows major revised points. revised points easily searched copying "<R>" file specifying "Find what:" field.
2SK1492
Data Sheet D18443EJ2V0DS
2SK1492
Data Sheet D18443EJ2V0DS
2SK1492
Data Sheet D18443EJ2V0DS
2SK1492
Data Sheet D18443EJ2V0DS
2SK1492
Data Sheet D18443EJ2V0DS
2SK1492
PACKAGE DRAWING (Unit:
TO-3P (MP-88)
TYP.
MAX. TYP.
15.7 MAX.
3.2±0.2
4.5±0.2
20.0±0.25
TYP.
MIN.
3.0±0.25
2.2±0.2 5.45 TYP.
1.0±0.2 5.45 TYP.
0.6±0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.1
EQUIVALENT CIRCUIT
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
TYP.
Data Sheet D18443EJ2V0DS
2SK1492
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2SK1492 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK1492 N

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