(AN-60-029) Purpose: determine Electrostatic Discharge Sensitivit

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(AN-60-029) Purpose: determine Electrostatic Discharge Sensitivit

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Sensitivity Testing Mini-Circuits ERA-5XSM
(AN-60-029)
Purpose: determine Electrostatic Discharge Sensitivity Mini-Circuits Amplifier ERA-5XSM accordance with Human Body Model (HBM) Machine Model (MM) sensitivity standards. failure criterion change gain and/or change device voltage. Ref.: STM5.1-1993 (for HBM) STM5.2-1999 (for MM). Human Body Model Three separate samples were used each different values voltage: 150V, 200V, 240V, 499V, 999V. Each sample subjected pulses each polarity each pairs pins: input output, input ground, output ground, total pulses. Electrical performance testing done gain device voltage 65mA bias current, before after pulses. Using failure criteria change gain change device voltage, devices passed 499V; 999V, failed. Machine Model Testing STM5.2-1999 Three separate samples were used each different values voltage: 50V, 70V, 100V, 150V. Each sample subjected pulses each polarity each pairs pins: input output, input ground, output ground, total pulses. Electrical performance testing done gain device voltage 65mA bias current, before after pulses. Data presented Table Using failure criteria stated 1.0, devices passed 50V; failed 70V.
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
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-5XSM
[150 Human Body Model] Units Gain (dB) Frequency PRE-Test POST-Test 20.45 20.42 2000 17.44 17.47 Vdd(v) Idd=65mA 4.81 4.81
Table Human Body Model
change PRE-Test POST-Test -0.03 20.36 20.32 0.03 17.37 17.22 0.00% 4.82 4.82 change PRE-Test POST-Test -0.04 20.43 20.4 -0.15 17.43 17.25 0.00% 4.81 4.81
change -0.03 -0.18 0.00%
[200 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 20.48 20.45 2000 17.45 17.85 Vdd(v) Idd=65mA 4.81 4.81
change PRE-Test POST-Test -0.03 20.45 20.42 17.42 17.81 0.00% 4.82 4.82
change PRE-Test POST-Test -0.03 20.44 20.33 0.39 17.44 17.97 0.00% 4.81 4.86
change -0.11 0.53 0.05 1.04%
[240 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 20.42 20.37 2000 17.42 17.22 Vdd(v) Idd=65mA 4.81 4.81
change PRE-Test POST-Test -0.05 20.45 20.42 -0.2 17.45 17.83 0.00% 4.82 4.82
change PRE-Test POST-Test -0.03 20.46 20.4 0.38 17.46 17.55 0.00% 4.81 4.81
change -0.06 0.09 0.00%
[499 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 20.67 20.57 2000 18.12 17.67 Vdd(v) Idd=65mA 4.81 4.84
change PRE-Test POST-Test -0.1 20.63 20.53 -0.45 17.57 17.53 0.03 0.62% 4.82 4.84
change PRE-Test POST-Test -0.1 20.59 20.48 -0.04 17.44 17.31 0.02 0.41% 4.81 4.84
change -0.11 -0.13 0.03 0.62%
[999 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 20.4 -14.63 2000 17.48 -15.18 Vdd(v) Idd=65mA 4.81 2.15
change PRE-Test POST-Test -35.03 20.5 -4.56 -32.66 17.48 -5.45 -2.66 -55.30% 4.82 3.42
change PRE-Test POST-Test change -25.06 20.49 1.08 -19.41 -22.93 17.44 3.49 -13.95 -1.4 -29.05% 4.81 3.74 -1.07 -22.25%
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
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-5XSM
Machine Model] Units Gain (dB) Frequency PRE-Test POST-Test 20.47 20.42 2000 17.44 17.25 Vdd(v) Idd=65mA 4.81 4.82
Table Machine Model
change PRE-Test POST-Test -0.05 20.48 20.4 -0.19 17.93 17.58 0.01 0.21% 4.82 4.85 change PRE-Test POST-Test -0.08 20.5 20.45 -0.35 17.66 17.41 0.03 0.62% 4.81 4.83
change -0.05 -0.25 0.02 0.42%
Units Gain (dB) Frequency PRE-Test POST-Test 20.47 20.34 2000 17.46 17.16 Vdd(v) Idd=65mA 4.81 4.86
change PRE-Test POST-Test -0.13 20.41 16.41 -0.3 17.47 14.82 0.05 1.04% 4.82 5.34
change PRE-Test POST-Test 20.47 19.69 -2.65 17.47 17.02 0.52 10.79% 4.81 5.82
change -0.78 -0.45 1.01 21.00%
[100 Units Gain (dB) Frequency PRE-Test POST-Test 20.31 16.7 2000 17.46 14.27 Vdd(v) Idd=65mA 4.81 6.34
change PRE-Test POST-Test -3.61 20.59 15.91 -3.19 17.55 13.67 1.53 31.81% 4.82 6.34
change PRE-Test POST-Test -4.68 20.41 -4.51 -3.88 17.45 -3.05 1.52 31.54% 4.81 6.34
change -24.92 -20.5 1.53 31.81%
[150 Units Gain (dB) Frequency PRE-Test POST-Test 20.49 -8.98 2000 17.47 -12.79 Vdd(v) Idd=65mA 4.81 2.66
change PRE-Test POST-Test -29.47 20.26 -15.43 -30.26 17.56 -14.54 -2.15 -44.70% 4.82 3.49
change PRE-Test POST-Test -35.69 20.51 -21.52 -32.1 17.92 -18.71 -1.33 -27.59% 4.81 5.34
change -42.03 -36.63 0.53 11.02%
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
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Additional Machine Model testing done steps, evaluate much performance degradation occurs when progressively increasing voltage applied given device, when given voltage applied repeatedly with performance monitored after each pulse. Separate device samples were used each steps. most sensitive combination polarity determined ERA-4XSM reported AN-60-028: input, ground. Because topology ERA-5XSM similar, most sensitive case should same following tests were therefore done only that case.
sequence pulses with fixed amplitude applied each units order determine cumulative effect stress. sequence pulses with fixed amplitude 100V applied other units order determine cumulative effect stress that voltage.
Step Test. Five units were stressed repeatedly with pulses. Electrical tests gain device voltage were done after each pulse. results shown Figures After pulses units passed criteria less than gain change, failures occurred against criterion device voltage change pulse. Step Test. Five units were stressed repeatedly with 100V pulses. Electrical tests gain device voltage were done after each pulse. After first pulse gain dropped 0.44dB device voltage increased 0.83V (that more than 10%, which would 0.5V). More 100V pulses caused more degradation gain device voltage. After third pulse 100V gain less 1.27dB, device voltage higher 1.9V.
Figure Gain number pulses
20.5
#-10
Gain,
19.5
Number pulses
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
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Figure Gain (low drive) 2000 number pulses
17.5
#-10
Gain,
16.5
Number pulses
Figure 65mA number pulses
6.25 5.75 Vdd, 5.25 4.75 4.25 Number pulses
#-10
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
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Conclusions Human Body Model: amplifier ERA-5XSM withstand 499V (Class 1A). Machine Model: amplifier ERA-5XSM shows gradual degradation gain device voltage. That fact bad. Even with multiple stress customer would rather have gradual changes then catastrophic failure. amplifier withstands single pulse, pulses 50V.
AN-60-029 Rev.: M90759 (01/28/04) File: AN60029.doc This document contents property Mini-Circuits.
Page

(AN-60-029) Purpose: determine Electrostatic Discharge Sensitivit

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