(AN-60-028) Purpose: determine Electrostatic Discharge Sensitivit

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(AN-60-028) Purpose: determine Electrostatic Discharge Sensitivit

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Sensitivity Testing Mini-Circuits ERA-4XSM
(AN-60-028)
Purpose: determine Electrostatic Discharge Sensitivity Mini-Circuits Amplifier ERA4XSM accordance with Human Body Model (HBM) Machine Model (MM) sensitivity standards. failure criterion change gain and/or change device voltage. Ref.: STM5.1-1993 (for HBM) STM5.2-1999 (for MM). Human Body Model Three separate samples were used each different values voltage: 150V, 200V, 240V, 499V, 999V. Each sample subjected pulses each polarity each pairs pins: input output, input ground, output ground, total pulses. Electrical performance testing done gain device voltage 65mA bias current, before after pulses. Data presented Table Using failure criteria stated 1.0, devices passed 499V; 999V, failed passed marginally. Machine Model Testing STM5.2-1999 Three separate samples were used each different values voltage: 50V, 100V, 150V. Each sample subjected pulses each polarity each pairs pins: input output, input ground, output ground, total pulses. Electrical performance testing done gain device voltage 65mA bias current, before after pulses. Data presented Table Using failure criteria stated 1.0, devices passed failed 100V.
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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-4XSM
[150 Human Body Model] Units Gain (dB) Frequency PRE-Test POST-Test 14.55 14.55 2000 13.44 13.64 Vdd(v) Idd=65mA 4.45
Table Human Body Model
change PRE-Test POST-Test 14.56 14.5 13.44 13.5 -0.05 -1.11% 4.45 change PRE-Test POST-Test -0.06 14.57 14.54 0.06 13.42 13.48 -0.05 -1.11% 4.44
change -0.03 0.06 -0.06 -1.33%
[200 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 14.55 14.5 2000 13.44 13.6 Vdd(v) Idd=65mA 4.45
change PRE-Test POST-Test -0.05 14.56 14.51 0.16 13.47 13.61 -0.05 -1.11% 4.44
change PRE-Test POST-Test -0.05 14.56 14.52 0.14 13.45 13.6 -0.06 -1.33% 4.45
change -0.04 0.15 -0.05 -1.11%
[240 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 14.55 14.51 2000 13.45 13.52 Vdd(v) Idd=65mA 4.44
change PRE-Test POST-Test -0.04 14.56 14.52 0.07 13.43 13.74 -0.06 -1.33% 4.44
change PRE-Test POST-Test -0.04 14.56 14.52 0.31 13.45 13.66 -0.06 -1.33% 4.45
change -0.04 0.21 -0.05 -1.11%
HBM] Units Gain (dB) Frequency PRE-Test POST-Test 14.56 14.5 2000 13.4 13.49 Vdd(v) Idd=65mA 4.47
change PRE-Test POST-Test -0.06 14.56 14.5 0.09 13.45 13.48 -0.03 -0.67% 4.47
change PRE-Test POST-Test -0.06 14.55 14.5 0.03 13.45 13.51 -0.03 -0.67% 4.47
change -0.05 0.06 -0.03 -0.67%
[999 HBM] Units Gain (dB) Frequency PRE-Test POST-Test 14.56 -36.21 2000 13.44 -9.8 Vdd(v) Idd=65mA 3.33
change PRE-Test POST-Test -50.77 14.55 0.96 -23.24 13.43 1.53 -1.17 -26.00% 3.98
change PRE-Test POST-Test -13.59 14.56 13.57 -11.9 13.45 12.51 -0.52 -11.56% 4.35
change -0.99 -0.94 -0.15 -3.33%
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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4XSM
Machine Model] Units Gain (dB) Frequency PRE-Test POST-Test 14.56 14.46 2000 13.44 13.41 Vdd(v) Idd=65mA
Table Machine Model
change PRE-Test POST-Test -0.1 14.55 14.53 -0.03 13.43 13.46 0.00% 4.47 change PRE-Test POST-Test -0.02 14.56 14.44 0.03 13.45 13.39 -0.03 -0.67%
change -0.12 -0.06 0.00%
[100 Units Gain (dB) Frequency PRE-Test POST-Test 14.56 13.67 2000 13.45 12.52 Vdd(v) Idd=65mA
change PRE-Test POST-Test -0.89 14.6 13.63 -0.93 13.49 12.54 13.33% 4.53 5.14
change PRE-Test POST-Test -0.97 14.59 13.93 -0.95 13.47 12.79 0.61 13.47% 4.53 4.94
change -0.66 -0.68 0.41 9.05%
[150 Units Gain (dB) Frequency PRE-Test POST-Test 14.56 -2.18 2000 13.43 -2.86 Vdd(v) Idd=65mA
change PRE-Test POST-Test -16.74 14.56 -15.05 -16.29 13.42 -13.06 -1.1 -24.44% 3.06
change PRE-Test POST-Test -29.61 14.56 -21.78 -26.48 13.45 -20.64 -1.44 -32.00% 2.42
change -36.34 -34.09 -2.08 -46.22%
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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Additional Machine Model testing done three steps, evaluate much performance degradation occurs when progressively increasing voltage applied given device, when given voltage applied repeatedly with performance monitored after each pulse. Separate device samples were used each three steps. Step pulse each polarity applied with fixed amplitude 100V different combinations pins order determine most sensitive pair pins most sensitive polarity. Purpose: reduce amount testing required subsequent tests. Step sequence pulses applied each device most sensitive pair pins polarity found Step pulse each following voltages increasing value: 50V, 70V, 100V, 150V, 200V. Gain device voltage were measured initially after each pulse. Step pulse with fixed amplitude 100V applied multiple times, most sensitive pair pins polarity found Step order determine cumulative effect stress.
Step Test. Applying 100V pulse showed following: most sensitive combination input-to-ground where applied input applied ground. With that condition gain dropped 0.3dB device voltage rose 0.32V. least sensitive combination output-to-ground where applied output applied ground. With that condition gain dropped 0.08dB device voltage rose 0.02V. Table lists data.
Initial #1.#5 Gain, 14.59 0.0075 Vdd, 4.48 0.0063 #6.#10 Gain, 14.59 0.0098 Vdd, 4.47 0.0049 #11.#15 Gain, 14.59 0.0080 Vdd, 4.47 0.0063 After 100V Machine Model pulse After 100V Machine Model pulse previous pulse polarity Input Ground Input Ground Gain, Gain, 14.58 14.29 0.0102 0.0377 Vdd, Vdd, 4.48 4.80 0.0040 0.0290 Output Ground Gain, 14.58 0.0117 Vdd, 4.47 0.0089 Output Input Gain, 14.47 0.0102 Vdd, 4.71 0.0117 Output Ground Gain, 14.51 0.0075 Vdd, 4.49 0.0098 Output Input Gain, 14.45 0.0242 Vdd, 4.72 0.0174
Sigma Sigma
Sigma Sigma
Sigma Sigma
Table "Step Machine Model Test Data Determine Most Sensitive Case
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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Step Test. results progressively increasing stress, pulse each voltage, shown Figures
Figure Gain pulse voltage
14.75 14.5 14.25 13.75
Gain,
13.5 13.25 12.75 12.5 12.25 11.75 11.5 ERA-4XSM ERA-4XSM 2000
voltage,
Figure pulse voltage
Vdd,
ERA-4XSM 65mA
voltage,
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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Figures show that very little still noticeable degradation gain (0.1dB) device voltage (0.1V) starts with pulse. pulse 100V changes gain device voltage gradually increasing. degradation caused 100V pulse very good correlation with Step measurements that were performed other samples ERA-4XSM. pulse 150V more degradation observed, still gradual. This cumulative effect rather than simply effect increased voltage, demonstrated Step (which done with repeated 100V pulses). Five units were stressed repeatedly with 100V pulses. Electrical tests Step Test. gain device voltage were made after each pulse. results shown Figures After pulse units passed criteria less than gain less than device voltage change. After pulses, failed voltage criterion.
Figure Gain number pulses
14.75 14.5 14.25 Gain, 13.75 13.5 13.25 12.75 12.5 Number 100V pulses
#-21 #-22 #-23 #-24 #-25
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
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Figure 65mA number pulses
6.25 5.75 Vdd, 5.25 4.75 4.25 Number 100V pulses
#-21 #-22 #-23 #-24 #-25
Conclusions Human Body Model: amplifier ERA-4XSM withstand least 499V (Class 1A). Machine Model: amplifier ERA-4XSM shows gradual degradation gain device voltage. That fact bad. Even with multiple stress customer would rather have gradual changes then catastrophic failure. amplifier withstands single 100V pulse, pulses 50V.
AN-60-028 Rev.: M90759 (01/28/04) File: AN60028.doc This document contents property Mini-Circuits.
Page

(AN-60-028) Purpose: determine Electrostatic Discharge Sensitivit

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