IRF7811WPbF HEXFET® Power MOSFET DC-DC Converters N-Channel

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IRF7811WPbF HEXFET® Power MOSFET DC-DC Converters N-Channel

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95023C
IRF7811WPbF
HEXFET® Power MOSFET DC-DC Converters
N-Channel Application-Specific MOSFETs Ideal Core DC-DC Converters Conduction Losses Switching Losses 100% Tested Lead-Free
Description This device employs advanced HEXFET Power MOSFET technology achieve unprecedented balance on-resistance gate charge. reduced conduction switching losses make ideal high efficiency DC-DC converters that power latest generation microprocessors. IRF7811WPbF been optimized parameters that critical synchronous buck converters including RDS(on), gate charge Cdv/dt-induced turn-on immunity. IRF7811WPbF offers particulary RDS(on) high Cdv/dt immunity synchronous applications. package designed vapor phase, infra-red, convection, wave soldering techniques. Power dissipation greater than possible typical mount application.
SO-8
DEVICE CHARACTERISTICS IRF7811WPbF RDS(on) Qoss 9.0m 22nC 10.1nC 12nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation 25°C 90°C Junction Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead Max. Units °C/W °C/W TSTG 25°C 90°C Symbol IRF7811WPbF Units
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01/06/09
IRF7811WPbF
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS IGSS QGS1 QGS2 Qoss (on) (off) Ciss Coss 16.3 10.1 2335 16V, 16V, 5.0V Clamped Inductive Load 16V, ±100 Units Conditions 250µA 4.5V, VGS,ID 250µA 24V, 24V, 100°C Gate-Source Leakage Current Total Gate Cont Total Gate Sync Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate Drain Charge Switch Chg(Qgs2 Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance ±12V VGS=5.0V, ID=15A, VDS=16V VDS< 100mV 16V, 15A, 5.0V
Current*
Reverse Transfer Capacitance Crss
Source-Drain Rating Characteristics
Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) Qrr(s) 1.25 Units Conditions 15A, di/dt 700A/µs 16V, di/dt 700A/µs (with 10BQ040) 16V,
Notes:
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Repetitive rating; pulse width limited max. junction temperature. Pulse width duty cycle When mounted inch square copper board measured Qoss Typical values RDS(on) measured 4.5V, measured 5.0V, 15A.
IRF7811WPbF
RDS(on) Drain-to-Source Resistance (Normalized)
VGS, Gate-to-Source Voltage
4.5V
Junction Temperature
Total Gate Charge (nC)
Normalized On-Resistance Temperature
Typical Gate Charge Gate-to-Source Voltage
RDS(on) Drain-to -Source Resistance
0.020
4000
Ciss Cgd, SHORTED Crss Coss
3000
0.015
Capacitance(pF)
Ciss
2000
0.010
1000
Coss
0.005
Crss
VGS, Gate -Source Voltage
VDS, Drain-to-Source Voltage
On-Resistance Gate Voltage
Typical Capacitance Drain-to-Source Voltage
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IRF7811WPbF
Drain-to-Source Current
Reverse Drain Current
20µs PULSE WIDTH
Gate-to-Source Voltage
,Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.00001 Notes: Duty factor Peak thJA 0.001 0.01
0.0001
Rectangular Pulse Duration (sec)
Figure Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7811WPbF
SO-8 Package Outline(Mosfet Fetky)
Dimensions shown milimeters (inches)
DI8C@T !!'# HDGGDH@U@ST
IPU@T)
APPUQSDIU
SO-8 Part Marking Information
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;;
Note: most current drawing please refer website http://www.irf.com/package/
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IRF7811WPbF
SO-8 Tape Reel
Dimensions shown millimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Note: most current drawing please refer website http://www.irf.com/package/
Data specifications subject change without notice. This product been designed qualified Consumer market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 01/2009
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IRF7811WPbF HEXFET® Power MOSFET DC-DC Converters N-Channel

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