INSULATED GATE BIPOLAR TRANSISTOR Features (ON) trench IGBT techn
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96233
INSULATED GATE BIPOLAR TRANSISTOR Features
(ON) trench IGBT technology switching losses Maximum junction temperature Square RBSOA 100% parts tested Positive (ON) temperature co-efficient Tight parameter distribution Lead -Free
IRG7PH42UPbF IRG7PH42U-EP
VCES 1200V 60A, 100°G
TJ(max) =175°
n-channel
VCE(on) typ. 1.7V
Benefits
High efficiency wide range applications Suitable wide range switching frequencies (ON) switching losses Rugged transient performance increased reliability Excellent current sharing parallel operation
Applications
U.P.S Welding Solar inverter Induction heating
TO-247AC IRG7PH42UPbF
TO-247AD IRG7PH42U-EP
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C INOMINAL 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, Clamped Inductive Load Current, Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw (0.063 (1.6mm) from case) (1.1
Max.
1200
Units
+175
Thermal Resistance
Parameter
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC Thermal Resistance, Case-to-Sink (flat, greased surface)
Min.
Typ.
0.24
Max.
0.39
Units
°C/W
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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04/28/09
IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
1200
Typ.
0.39
Max. Units
±100
Conditions
100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. Breakdown Voltage
V/°C (25°C-175°C) 30A, 15V, 25°C 30A, 15V, 30A, 15V, VGE,
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current
150°C 175°C
ICES IGES
mV/°C VGE, (25°C 175°C) 50V, 30A, 80µs 1200V 1200V, 175°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etotal td(on) td(off) Eoff Etotal td(on) td(off) Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min.
Typ.
2105 1182 3287 3186 2153 5339 3338
Max. Units
2374 1424 3798
Conditions
600V 30A, 600V, 200µH,TJ
Energy losses include tail diode reverse recovery Diode clamp same IRG7PH42UDPbF
30A, 600V, VGE=15V RG=10, L=200µH, 175°
Energy losses include tail diode reverse recovery Diode clamp same IRG7PH42UDPbF
1.0Mhz 120A 960V, =1200V +20V =175°
FULL SQUARE
Notes:
(VCES 20V, 22µH, Pulse width 400µs; duty cycle Refer AN-1086 guidelines measuring V(BR)CES safely. measured approximately 90°C. Calculated continuous current based maximum allowable junction temperature. Bond wire current limit 78A. Note that current limitations arising from heating device leads occur with some lead mounting arrangements.
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IRG7PH42UPbF/IRG7PH42U-EP
Load Current
Square wave: rated voltage
both: Duty cycle 150°C Tsink 90°C Gate drive specified Power Dissipation
Ideal diodes
Frequency
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
1000
Fig. Power Dissipation Case Temperature
1000
10µsec
100µsec
1msec
25°C 175°C Single Pulse 1000 10000
1000 10000
Fig. Forward 25°C, 175°C; =15V
Fig. Reverse Bias 175°C; =20V
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IRG7PH42UPbF/IRG7PH42U-EP
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; =20µs
Fig. Typ. IGBT Output Characteristics 25°C; 20µs
8.0V
Fig. Typ. IGBT Output Characteristics 175°C; 20µs
Fig. Typical -40°
Fig. Typical
Fig. Typical 175°
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IRG7PH42UPbF/IRG7PH42U-EP
ICE, Collector-to-Emitter Current
7000 6000
25°C 175°
VGE, Gate-to-Emitter Voltage
5000
Energy (µJ)
4000 3000 2000 1000
EOFF
Fig. Typ. Transfer Characteristics 50V; 20µs
1000 tdOFF
Fig. Typ. Energy Loss 175°C; 200µH; 600V,
6000 5500 5000
Swiching Time (ns)
tdON
Energy (µJ)
4500 4000 3500 3000 2500 2000 1500
EOFF
1000
Fig. Typ. Switching Time 175°C; 200µH; 600V,
10000
Fig. Typ. Energy Loss 175°C; 200µH; 600V, 30A;
Swiching Time (ns)
1000
tdOFF
tdON
Fig. Typ. Switching Time 175°C; 200µH; 600V, 30A;
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IRG7PH42UPbF/IRG7PH42U-EP
10000 Cies
VGE, Gate-to-Emitter Voltage
Total Gate Charge (nC) VCES 600V VCES 400V
Capacitance (pF)
1000
Coes
Cres
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 30A; 600µH
0.50
Thermal Response thJC
0.20 0.10 0.05
0.01
0.02 0.01
(°C/W)
0.1306 0.1752 0.0814 0.0031
(sec)
0.000313 0.002056 0.008349 0.0431
0.001
SINGLE PULSE THERMAL RESPONSE
i/Ri i/Ri
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.0001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247A
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IRG7PH42UPbF/IRG7PH42U-EP
Vclamped
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
VCICM
DIODE CLAMP
DRIVER
Fig.C.T.3 Switching Loss Circuit
Fig.C.T.4 Resistive Load Circuit
100K
sense 0.0075µ
orce
sense
Fig.C.T.5 BVCES Filter Circuit
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IRG7PH42UPbF/IRG7PH42U-EP
-100 -0.5
TEST CURRENT
current
-100
test current
Loss
time(µs)
10.1
10.3
time (µs)
Fig. Typ. Turn-off Loss Waveform 175°C using Fig. CT.4
Fig. Typ. Turn-on Loss Waveform 175°C using Fig. CT.4
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IRG7PH42UPbF/IRG7PH42U-EP
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
@Y6HQG@)
,5)3(
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
TO-247AC package recommended Surface Mount Application. Note: most current drawing please refer website http://www.irf.com/package/
www.irf.com
IRG7PH42UPbF/IRG7PH42U-EP
Dimensions shown millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) !F9@ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
TO-247AD package recommended Surface Mount Application. Note: most current drawing please refer website http://www.irf.com/package/ Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/2009
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