IRF3710SPbF IRF3710LPbF Advanced Process Technology Ultra On-Resi
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95108A
IRF3710SPbF IRF3710LPbF
Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
VDSS 100V RDS(on)
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications.
D2Pak surface mount power package capable accommodating sizes HEX-4. provides highest power capability lowest possible on-resistance existing surface mount package. 2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application. through-hole version (IRF3710L) available low-profile applications.
D2Pak IRF3710SPbF
TO-262 IRF3710LPbF
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
Max.
0.75
Units
°C/W
www.irf.com
09/15/09
IRF3710S/LPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min.
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, =28A VGS, 250µA 25V, 100V, 80V, 150°C -100 -20V 10V, Fig. 10V, Fig. Between lead, (0.25in.) from package center contact 3130 1.0MHz, Fig. 1060280 28A, 0.70mH
Typ. 0.13
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 28A, 25°C, 1010 di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. (See fig. 11). Starting 25°C, 0.70mH, 28A, VGS=10V. (See Figure 12). 28A, di/dt 380A/µs, V(BR)DSS, 175°C. Pulse width 400µs; duty cycle
This typical value device destruction represents
operation outside rated limits.
This calculated value limited 175°C Uses IRF3710 data test conditions.
**When mounted square (FR-4 G-10 Material). recommended footprint soldering techniques refer application note #AN-994.
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IRF3710S/LPbF
1000
7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V
1000
Drain-to-Source Current
Drain-to-Source Current
7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V
3.5V
3.5V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
VDS, Drain-to-Source Voltage
VDS, Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000.00
Drain-to-Source Current
175°C
10.00
DS(on) Drain-to-Source Resistance
100.00
(Normalized)
25°C
1.00
0.10
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF3710S/LPbF
100000 Ciss Cgd, SHORTED Crss
Gate-to-Source Voltage
10000
Coss
Capacitance(pF)
Ciss
1000
Coss
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000.00
1000
OPERATION THIS AREA LIMITED DS(on)
100.00 175°C 10.00
Drain-to-Source Current
ISD, Reverse Drain Current
100µsec 1msec
1.00
25°C
25°C 175°C Single Pulse
10msec
0.10 VSD, Source-toDrain Voltage
1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF3710S/LPbF
D.U.T.
-VDD
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
thJC
0.50
0.20
Thermal Response
0.10 0.05 0.02 0.01 Notes: Duty factor Peak
thJC
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3710S/LPbF
D.U.T
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRF3710S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD
5.0V Logic Level Drive Devices N-channel HEXFET® power MOSFETs
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IRF3710S/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions shown millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` A$"T
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` A$"T
Note: most current drawing please refer website http://www.irf.com/package/
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IRF3710S/LPbF
TO-262 Package Outline
Dimensions shown millimeters (inches)
TO-262 Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
Note: most current drawing please refer website http://www.irf.com/package/
www.irf.com
IRF3710S/LPbF
Dimensions shown millimeters (inches)
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
D2Pak Tape Reel Information
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
Note: most current drawing please refer website http://www.irf.com/package/
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.09/2009
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