N-channel TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHPower

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N-channel TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHPower

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STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z
N-channel TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHPower MOSFET
Type STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1
VDSS (@Tjmax)
RDS(on)
TO-220
TO-220FP
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very intrinsic capacitances Very good manufacturing repeatability Figure
DPAK
IPAK
Internal schematic diagram
D(2)
Application
Switching applications
Description
SuperMESHseries obtained through extreme optimization ST's well established strip-based PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts. Table Device summary
Marking P3NK80Z F3NK80Z D3NK80Z D3NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape reel Tube
G(1)
S(3)
AM01476v1
Order codes STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1
September 2009
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www.st.com
Contents
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Packing mechanical data Revision history
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Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Value Parameter TO-220, DPAK IPAK 1.57 0.56 2000 2500 1.57 TO-220FP Unit
VDGR IDM(2) PTOT
Drain-source voltage (VGS Drain-gate voltage (RGS Gate-source voltage Drain current (continuous) Drain current (continuous) TC=100 Drain current (pulsed) Total dissipation Derating factor
W/°C V/ns
VESD(G-S) dv/dt VISO Tstg
Gate source (HBM-C=100 R=1.5 Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
Limited only maximum temperature allowed Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, TJMAX.
Table
Symbol
Thermal data
Value Parameter TO-220 TO-220FP 62.5 DPAK IPAK 1.78 °C/W °C/W Unit
Rthj-case Rthj-a
Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose
1.78
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Electrical ratings
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited Max) Single pulse avalanche energy (starting Tj=25 ID=IAR, VDD=50 Value Unit
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Electrical characteristics
Electrical characteristics
(TCASE=25 unless otherwise specified) Table
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Test conditions VGS= rating, rating, Min.
Typ.
Max.
Unit
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current (VGS Gate threshold voltage Static drain-source resistance VGS, 1.25 3.75
Table
Symbol
Dynamic
Parameter Test conditions Min. Typ. 10.8 Max. Unit
Forward transconductance 1.25 Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge MHz, VGS=0
Ciss Coss Crss Coss eq.(2) td(on) td(off)
VGS=0, VDD=400 1.25 VGS=10 (see Figure VDD=640
Pulsed: pulse duration=300 duty cycle 1.5% Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
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Electrical characteristics
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= VGS=0 ISD= di/dt A/µs, VDD=50 (see Figure ISD= di/dt A/µs, VDD=50 Tj=150 (see Figure Test conditions 1600 2100 Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: pulse duration=300 duty cycle 1.5%
Table
Symbol
Gate-source Zener diode
Parameter Test conditions Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=± (open drain)
built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area TO-220, DPAK, IPAK Figure Thermal impedance TO-220, DPAK, IPAK
Figure
Safe operating area TO-220FP
Figure
Thermal impedance TO-220FP
Figure
Output characteristics
Figure
Transfer characteristics
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Electrical characteristics Figure Transconductance
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure Static drain-source resistance
Figure Gate charge gate-source voltage Figure Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
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STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure Source-drain diode forward characteristics
Electrical characteristics
Figure Normalized BVDSS temperature
Figure Maximum avalanche energy temperature
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Test circuits
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Test circuits
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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Package mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
TO-220 mechanical data
4.40 0.61 1.14 0.48 15.25 1.27 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019
inch 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
TO-220FP mechanical data Dim. Min.
28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4
Typ.
Max.
2.75 1.70 10.4
7012510_Rev_J
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Package mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 4.70 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
TO-251 (IPAK) mechanical data
DIM. (L1) 9.00 0.80 0.80 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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Packing mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Packing mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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Revision history
Revision history
Table
Date 09-Sep-2004 10-Aug-2006 26-Feb-2009 07-Sep-2009
Revision history
Revision Complete document template, content change Updated mechanical data VESD(G-S) value been corrected Changes
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N-channel TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHPower

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