General Purpose Transistor BASE COLLECTOR EMITTER
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BC556, BC557, A/B/C BC558, A/B/C
General Purpose Transistor
BASE
COLLECTOR
EMITTER
TO-92
Maximum Ratings TA=25 unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VECO VCBO VEBO BC556 BC557 BC558 Unit
THERMAL CHARACTERISTICS
Charact Total Device Dissipation Alumina Substrate,TA=25°C BC556 BC557 BC558 BC556 BC557 BC558 Symbol Unit mW/°C
Junction Storage, Temperature
Tstg
+150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lC=2mA, lB=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
V(BR)CEO
Collector-Base Breakdown Voltage (lC=100A, lE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (lE=100A, lC=0)
V(BR)EBO
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BC556, BC557, A/B/C BC558, A/B/C
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) (Countinued)
Characteristics Symbol Unit
CHARACTERISTICS
Collector Cutoff Current
(VCE=-60V, lB=0) (VCE=-40V, lB=0) (VCE=-25V, lB=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
lCEO
-0.1
Collector Cutoff Current
(VCB=-70V, lE=0) (VCB=-45V, lE=0) (VCB=-25V, lE=0)
lCBO
-0.1
Emitter Cutoff Current
(VEB =-5.0 Vdc,
lEBO
-0.1
CHARACTERISTICS
current gain
(VCE=-5V, lc=-2mA)
BC556 BC557 BC558 BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C
-0.3
Collector-emitter saturation voltage
(lC=-100mA, lB=-5mA)
VCE(sat) VBE(sat)
Base-emitter saturation voltage
(lC=-100mA, lB=-5mA)
Transition frequency
(VCE=-5V, lC=-10mA, f=100MHz)
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C,CAPACITANCE(pF)
VCE,COLLECTOR-EMITTER VOLTAGE(V)
hFE,NORMALIZED CURRENT GAIN
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BC556, BC557, A/B/C BC558, A/B/C
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WEITRON
26-Apr-05
BC556, BC557, A/B/C BC558, A/B/C
TO-92 Outline Dimensions
unit:mm
TO-92
3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
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