N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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STW77N65M5
N-channel 0.033 MDmeshV Power MOSFET TO-247
Type STW77N65M5
VDSS @TjMAX
RDS(on) 0.038
TO-247 worldwide best RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy drive 100% avalanche tested
TO-247
Application
Switching applications
Figure
Internal schematic diagram
Description
MDmesh revolutionary Power MOSFET technology, which combines innovative proprietary vertical process with well known company`s PowerMESHhorizontal layout. resulting product extremely onresistance, unmatched among silicon-based Power MOSFETs, making especially suited applications which require superior power density outstanding efficiencies.
Table
Device summary
Marking 77N65M5 Package TO-247 Packaging Tube
Order codes STW77N65M5
July 2009
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www.st.com
Contents
STW77N65M5
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Revision history
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STW77N65M5
Electrical ratings
Electrical ratings
Table
Symbol PTOT Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation current during repetitive single pulse avalanche (pulse width limited TJMAX) Single pulse avalanche energy (starting IAR,
Absolute maximum ratings
Parameter Value 41.5 2000 Unit V/ns
dv/dt Peak diode recovery voltage slope Tstg Storage temperature Max. operating junction temperature
Pulse width limited safe operating area di/dt A/µs, peak V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.31 Unit °C/W °C/W
Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Maximum lead temperature soldering purpose
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Electrical characteristics
STW77N65M5
Electrical characteristics
unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
/off states
Parameter Drain-source breakdown voltage Test conditions Min. 0.030 0.038 Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125 Gate-body leakage current (VDS
Gate threshold voltage VGS, Static drain-source resistance 34.5
Table
Symbol Ciss Coss Crss Co(tr)(1)
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 9800 Max. Unit
MHz,
Co(er)(2)
1000
open drain 34.5 (see Figure
Coss time related defined constant equivalent capacitance giving same charging time Coss when increases from VDSS Coss energy related defined constant equivalent capacitance giving same stored energy Coss when increases from VDSS
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STW77N65M5
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions (see Figure Min. Typ. Unit
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 34.5 34.5 di/dt A/µs (see Figure 34.5 di/dt A/µs (see Figure Test conditions Min. Typ. Max. Unit
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STW77N65M5
Figure
Electrical characteristics (curves)
Safe operating area
AM04964v1
Figure
Thermal impedance
this
10µs
100µs
Tj=150°C Tc=25°C Single pulse VDS(V) 10ms
Figure
Output characteristics
AM04965v1
Figure
Transfer characteristics
AM04966v1
VGS=10V
VDS=2V
VDS(V) VGS(V)
Figure
Gate charge gate-source voltage Figure
AM04969v1
Static drain-source resistance
AM04968v1
VDD=520V ID=34.5A
RDS(on) 0.041 0.036 0.031 0.026 0.021 0.016 0.011
ID=34.5A VGS=10V
Qg(nC)
ID(A)
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STW77N65M5 Figure
(pF) 100000 10000 1000 Crss VDS(V) Coss Ciss
Electrical characteristics Figure
AM04970v1
Capacitance variations
Output capacitance stored energy
AM04971v1
Eoss (µJ)
VDS(V)
Figure Normalized gate threshold voltage temperature
VGS(th) (norm) 1.10
AM04972v1
Figure Normalized resistance temperature
RDS(on) (norm)
AM01573v1
34.5 VGS=
1.00 0.90
0.80
0.70
TJ(°C)
TJ(°C)
Figure Source-drain diode forward characteristics
TJ=25°C TJ=150°C ISD(A)
AM04974v1
Figure Normalized BVDSS temperature
BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 TJ(°C)
AM04967v1
TJ=-50°C
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Electrical characteristics Figure Switching losses gate resistance
STW77N65M5
(µJ)
AM04973v1
ID=25A VDD=400V L=50µH
Eoff
RG()
including reverse recovery diode
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Test circuits
Test circuits
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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Package mechanical data
STW77N65M5
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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STW77N65M5
Package mechanical data
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
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Revision history
STW77N65M5
Revision history
Table
Date 20-Jan-2009 14-Jul-2009
Document revision history
Revision First release. Document status promoted from preliminary data datasheet. Changes
12/13
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N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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