N-channel 0.01 DPAK, IPAK STripFETV Power MOSFET Type STD40N2LH5

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N-channel 0.01 DPAK, IPAK STripFETV Power MOSFET Type STD40N2LH5

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STD40N2LH5 STU40N2LH5
N-channel 0.01 DPAK, IPAK STripFETV Power MOSFET
Type STD40N2LH5 STU40N2LH5
VDSS
RDS(on) 0.0118 0.0124
RDS(on) industry benchmark Extremely on-resistance RDS(on) Very switching gate charge High avalanche ruggedness gate drive power losses
DPAK
IPAK
Application
Switching applications
Figure
Internal schematic diagram
Description
This STripFETV Power MOSFET technology among latest improvements, which have been especially tailored achieve very onstate resistance providing also best-inclass figure merit (FOM).
Table
Device summary
Marking 40N2LH5 40N2LH5 Package DPAK IPAK Packaging Tape reel Tube
Order codes STD40N2LH5 STU40N2LH5
September 2009
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www.st.com
Contents
STD40N2LH5, STU40N2LH5
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Packaging mechanical data Revision history
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STD40N2LH5, STU40N2LH5
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value 0.23 Unit W/°C
PTOT Tstg
Single pulse avalanche energy Operating junction temperature Storage temperature
Pulse width limited safe operating area Starting
Table
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case Thermal resistance junction-case Maximum lead temperature soldering purpose Value Unit °C/W °C/W
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Electrical characteristics
STD40N2LH5, STU40N2LH5
Electrical characteristics
(TCASE 25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th)
Static
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate body leakage current (VDS Gate threshold voltage Test conditions VGS= VDS= VGS, VGS= version 0.01 0.0118 Min.
±100
Typ.
Max.
Unit
RDS(on)
Static drain-source resistance
VGS= VGS= version VGS=
0.0106 0.0124 0.0135 0.0155 0.0141 0.0161
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. Max. Unit
MHz, VDD=15 (Figure
Table
Symbol td(on) td(off)
Switching on/off (resistive load)
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= VGS= (Figure Figure VDD= VGS= (Figure Figure Min. Typ. 13.6 17.6 Max. Unit
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Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed)(1) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= VGS=0 ISD= di/dt =100 A/µs, VDD= (Figure Test conditions Min. 17.6 Typ. Max. Unit
Pulsed: pulse duration 300µs, duty cycle 1.5%
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Electrical characteristics
STD40N2LH5, STU40N2LH5
Figure
Electrical characteristics (curves)
Safe operating area
AM05425v1
Figure
Thermal impedance
this
100µs 10ms
Tj=150°C Tc=25°C Sinlge pulse
VDS(V)
Figure
Output characteristics
AM05426v1
Figure
Transfer characteristics
AM05427v1
VGS=10V
VDS=3V
VDS(V)
VGS(V)
Figure
BVDSS (norm) 1.10
Normalized BVDSS temperature
AM05429v1
Figure
RDS(on) 14.0 12.0 10.0
Static drain-source resistance
AM05428v1
ID=20A VGS=10V
1.05
1.00
0.95 0.90 TJ(°C) ID(A)
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STD40N2LH5, STU40N2LH5 Figure
Qg(nC) VDD=12.5V ID=40A 1000
Electrical characteristics Capacitance variations
AM05431v1
Gate charge gate-source voltage Figure
AM05430v1
(pF)
Ciss
Coss
Crss
VDS(V)
Figure Normalized gate threshold voltage temperature
VGS(th) (norm)
AM05432v1
Figure Normalized resistance temperature
RDS(on) (norm)
AM05433v1
TJ(°C) TJ(°C)
Figure Source-drain diode forward characteristics
ISD(A) TJ=25°C TJ=150°C
AM05434v1
TJ=-55°C
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Test circuits
STD40N2LH5, STU40N2LH5
Test circuits
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped Inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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STD40N2LH5, STU40N2LH5 Figure Gate charge waveform
Test circuits
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Package mechanical data
STD40N2LH5, STU40N2LH5
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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Package mechanical data
TO-251 (IPAK) mechanical data
DIM. (L1) 9.00 0.80 0.80 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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Package mechanical data
STD40N2LH5, STU40N2LH5
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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Revision history
STD40N2LH5, STU40N2LH5
Revision history
Table
Date 24-Jul-2008 23-Sep-2008 10-Sep-2009
Document revision history
Revision Initial release value been changed Table Table Document status promoted from preliminary data datasheet. Changes
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N-channel 0.01 DPAK, IPAK STripFETV Power MOSFET Type STD40N2LH5

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