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RN2107MFV,RN2108MFV,RN2109MFV 0.22±0.05 Unit: 1.2±0.05
Top Searches for this datasheetRN2107MFVRN2109MFV RN2107MFV,RN2108MFV,RN2109MFV 0.22±0.05 Unit: 1.2±0.05 0.8±0.05 0.32±0.05 0.13±0.05 BASE EMITTER COLLECTOR Ultra-small package, suited very high density mounting Incorporating bias resistor into transistor reduces number parts, enabling manufacture ever more compact equipment lowering assembly cost. 1.2±0.05 0.8±0.05 Complementary RN1107MFV~RN1109MFV wide range resistor values available various circuits. Equivalent Circuit Bias Resistor Values 0.5±0.05 Type RN2107MFV RN2108MFV RN2109MFV VESM JEDEC JEITA TOSHIBA 2-1L1A Absolute Maximum Ratings 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2107MFV ~RN2109MFV RN2107MFV ~RN2109MFV RN2107MFV RN2108MFV RN2109MFV PC(Note Tstg VEBO Symbol VCBO VCEO Rating -100 -55~150 Unit Weight: 0.0015 (typ.) Note: Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept Methods") individual reliability data (i.e. reliability test report estimated failure rate, etc). Note Mounted board (25.4 25.4 mmt) 0.45 1.15 0.45 2007-11-01 RN2107MFVRN2109MFV Electrical Characteristics 25°C) Characteristic Collector cutoff current RN2107MFV~ 2109MFV RN2107MFV Emitter cutoff current RN2108MFV RN2109MFV RN2107MFV current gain RN2108MFV RN2109MFV Collector-emitter saturation voltage RN2107MFV~ 2109MFV RN2107MFV Input voltage (ON) RN2108MFV RN2109MFV RN2107MFV Input voltage (OFF) RN2108MFV RN2109MFV Collector output capacitance RN2107MFV~ 2109MFV RN2107MFV Input resistor RN2108MFV RN2109MFV RN2107MFV Resistor ratio RN2108MFV RN2109MFV R1/R2 (OFF) -0.1 (ON) -0.2 (sat) -0.25 IEBO Symbol ICBO ICEO Test Circuit Test Condition -0.081 -0.078 -0.167 -0.7 -1.0 -2.2 -0.5 -0.6 -1.5 15.4 32.9 0.17 0.374 1.71 Typ. -0.1 0.213 0.468 2.14 -100 -500 -0.15 -0.145 -0.311 -0.3 -1.8 -2.6 -5.8 -1.0 -1.16 -2.6 28.6 61.1 0.255 0.562 2.56 Unit 2007-11-01 RN2107MFVRN2109MFV RN2107MFV -100 COLLECTOR CURRENT (mA) (ON) -10000 RN2107MFV (OFF) 100°C COLLECTOR CURRENT -1000 100°C EMITTER COMMON -0.2V -0.1 -0.1 -100 EMITTER COMMON -0.2 -100 -0.4 -0.6 -0.8 -1.2 -1.4 INPUT VOLTAGEVI (ON) INPUT VOLTAGEVI (OFF) RN2108MFV -100 COLLECTOR CURRENT (mA) (ON) -10000 RN2108MFV (OFF) EMITTER COMMON COLLECTOR CURRENT 100°C -1000 100°C EMITTER COMMON -0.2V -100 -0.1 -0.1 -100 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4 -1.6 INPUT VOLTAGEVI (ON) INPUT VOLTAGEVI (OFF) RN219MFV -100 COLLECTOR CURRENT (mA) (ON) -10000 RN2109MFV (OFF) COLLECTOR CURRENT EMITTER COMMON -0.2V EMITTER COMMON -1000 100°C 100°C -100 -0.1 -0.1 -100 -0.6 -1.4 -1.8 -2.2 -2.6 INPUT VOLTAGEVI (ON) INPUT VOLTAGEVI (OFF) 2007-11-01 RN2107MFVRN2109MFV RN2107MFV 1000 COLLECTOR-EMITTER SATURATION VOLTAGE (sat) RN2107MFV VCE(sat) CURRENT GAIN COMMON EMITTER 100°C COMMON EMITTER -0.1 100°C COLLECTOR CURRENTIC (mA) -100 -0.01 COLLECTOR CURRENT (mA) -100 RN2108MFV 1000 COLLECTOR-EMITTER SATURATION VOLTAGE (sat) RN2108MFV VCE(sat) CURRENT GAIN COMMON EMITTER 100°C COMMON EMITTER -0.1 100°C COLLECTOR CURRENTIC (mA) -100 -0.01 COLLECTOR CURRENT (mA) -100 RN2109MFV 1000 hFE- COLLECTOR-EMITTER SATURATION VOLTAGE (sat) RN2109MFV VCE(sat) COMMON EMITTER CURRENT GAIN COMMON EMITTER 100°C -0.1 100°C COLLECTOR CURRENTIC (mA) -100 -0.01 COLLECTOR CURRENT (mA) -100 2007-11-01 RN2107MFVRN2109MFV Type Name Marking RN2107MFV RN2108MFV RN2109MFV 2007-11-01 RN2107MFVRN2109MFV RESTRICTIONS PRODUCT Toshiba Corporation, subsidiaries affiliates (collectively "TOSHIBA"), reserve right make changes information this document, related hardware, software systems (collectively "Product") without notice. 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