TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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RN1901AFS~RN1906AFS
TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS
1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.15±0.05
(E1) (B1) (C2) (E2) (B2) (C1)
Unit:
0.35 0.35
1.0±0.05
Incorporating bias resistor into transistor reduces parts count. Reducing parts count enables manufacture ever more compact equipment saves assembly costs.
0.7±0.05
devices incorporated into fine-pitch, Small-Mold (6-pin) package.
0.1±0.05
Complementary RN2901AFS~RN2906AFS
0.48 -0.04
+0.02
Equivalent Circuit Bias Resistor Values
Type RN1901AFS RN1902AFS RN1903AFS RN1904AFS RN1905AFS RN1906AFS
JEDEC JEITA TOSHIBA
EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 COLLECTOR1
2-1F1D
Weight: 0.001 (typ.)
Absolute Maximum Ratings 25°C)
(Q1, common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1901AFS~1906AFS RN1901AFS~1906AFS RN1901AFS~1904AFS RN1905AFS, 1906AFS Symbol VCBO VCEO VEBO (Note Tstg Rating -55~150 Unit
Equivalent Circuit (top view)
Note:
Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept Methods") individual reliability data (i.e. reliability test report estimated failure rate, etc).
Note Total rating
2007-11-01
RN1901AFS~RN1906AFS
Electrical Characteristics 25°C) (Q1, common)
Characteristic Collector cutoff current RN1901AFS~1906AFS RN1901AFS RN1902AFS Emitter cutoff current RN1903AFS RN1904AFS RN1905AFS RN1906AFS RN1901AFS RN1902AFS current gain RN1903AFS RN1904AFS RN1905AFS RN1906AFS Collector-emitter saturation voltage RN1901AFS (sat) RN1902AFS~1906AFS RN1901AFS RN1902AFS Input voltage (ON) RN1903AFS RN1904AFS RN1905AFS RN1906AFS Input voltage (OFF) Collector output capacitance RN1901AFS~1904AFS RN1905AFS, 1906AFS RN1901AFS~1906AFS RN1901AFS RN1902AFS Input resistor RN1903AFS RN1904AFS RN1905AFS RN1906AFS RN1901AFS~1904AFS Resistor ratio RN1905AFS RN1906AFS R1/R2 (OFF) (ON) 0.25 IEBO Symbol ICBO ICEO Test Condition 0.89 0.41 0.18 0.088 0.085 0.08 Typ. 1.33 0.63 0.29 0.133 0.127 0.121 Unit
0.15
3.76 17.6 37.6 1.76 3.76
5.64 26.4 56.4 2.64 5.64
0.0376 0.0468 0.0562 0.08 0.12
2007-11-01
RN1901AFS~RN1906AFS
RN1901AFS (ON) COLLECTOR CURRENTIC (mA) COMMON EMITTER RN1902AFS (ON)
COLLECTOR CURRENTIC (mA)
COMMON EMITTER
Ta=100°C
Ta=100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
COLLECTOR CURRENTIC (mA)
RN1903AFS
(ON) COLLECTOR CURRENTIC (mA)
RN1904AFS
(ON)
COMMON EMMITER
COMMON EMITTER
100°C
100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
RN1905AFS COLLECTOR CURRENTIC (mA)
(ON) COLLECTOR CURRENTIC (mA)
RN1906AFS
(ON)
COMMON EMITTER
COMMON EMITTER
100°C
100°C
INPUT VOLTAGE (ON)
INPUT VOLTAGE (ON)
2007-11-01
RN1901AFS~RN1906AFS
RN1901AFS (OFF) 10000 COLLECTOR CURRENTIC (uA) COMMON EMITTER RN1902AFS (OFF)
10000 COLLECTOR CURRENT (uA)
COMMON EMITTER
1000 100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
RN1903AFS 10000 COLLECTOR CURRENTIC (uA)
(OFF) 10000 COLLECTOR CURRENTIC (uA)
RN1904AFS
(OFF)
COMMON EMMITER VCE=
COMMON EMITTER VCE=
1000
100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
RN1905AFS 10000 COLLECTOR CURRENTIC (uA)
(OFF) 10000 COLLECTOR CURRENTIC (uA)
RN1906AFS
(OFF)
COMMON EMITTER
COMMON EMITTER
1000 100°C
1000 100°C
INPUT VOLTAGE (OFF)
INPUT VOLTAGE (OFF)
2007-11-01
RN1901AFS~RN1906AFS
1000 COMMON EMITTER CURRENT GAIN RN1902AFS
1000
RN1901AFS
COLLECTOR EMITTER CURRENT GAIN 100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
RN1903AFS 1000
1000
RN1904AFS
hFE-
COMMON EMMITER VCE= CURRENT GAIN CURRENT GAIN
COMMON EMITTER VCE=
Ta=100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
RN1905AFS 1000
1000
RN1906AFS
COMMON EMITTER CURRENT GAIN CURRENT GAIN
COMMON EMITTER
Ta=100°C
100°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
2007-11-01
RN1901AFS~RN1906AFS
RN1901AFS COLLECTOR-EMITTER SATURATION VOLTAGE (sat) COLLECTOR-EMITTER SATURATION VOLTAGE (sat) COMMON EMITTER (sat) COMMON EMITTER RN1902AFS (sat)
Ta=100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
RN1903AFS COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
(sat) COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
RN1904AFS
VCE(sat)
COMMON EMMITER
COMMON EMITTER
100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
RN1905AFS COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
(sat) COLLECTOR-EMITTER SATURATION VOLTAGE (sat)
RN1906AFS
(sat)
COMMON EMITTER
COMMON EMITTER
100°C
100°C
0.01 COLLECTOR CURRENT (mA)
0.01 COLLECTOR CURRENT (mA)
2007-11-01
RN1901AFS~RN1906AFS
Type Name
Marking
Type Name
RN1901AFS
Type Name
RN1902AFS
RN1903AFS
Type Name
RN1904AFS
Type Name
Type Name
RN1905AFS
Type Name
RN1906AFS
2007-11-01
RN1901AFS~RN1906AFS
RESTRICTIONS PRODUCT
Toshiba Corporation, subsidiaries affiliates (collectively "TOSHIBA"), reserve right make changes information this document, related hardware, software systems (collectively "Product") without notice. This document information herein reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction permissible only reproduction without alteration/omission. Though TOSHIBA works continually improve Product's quality reliability, Product malfunction fail. Customers responsible complying with safety standards providing adequate designs safeguards their hardware, software systems which minimize risk avoid situations which malfunction failure Product could cause loss human life, bodily injury damage property, including data loss corruption. Before creating producing designs using, customers must also refer comply with latest versions relevant TOSHIBA information, including without limitation, this document, specifications, data sheets application notes Product precautions conditions forth "TOSHIBA Semiconductor Reliability Handbook" instructions application that Product will used with for. Customers solely responsible aspects their product design applications, including limited determining appropriateness this Product such design applications; evaluating determining applicability information contained this document, charts, diagrams, programs, algorithms, sample application circuits, other referenced documents; validating operating parameters such designs applications. TOSHIBA ASSUMES LIABILITY CUSTOMERS' PRODUCT DESIGN APPLICATIONS. Product intended general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots home electronics appliances) specific applications expressly stated this document. Product neither intended warranted equipment systems that require extraordinarily high levels quality and/or reliability and/or malfunction failure which cause loss human life, bodily injury, serious property damage serious public impact ("Unintended Use"). Unintended includes, without limitation, equipment used nuclear facilities, equipment used aerospace industry, medical equipment, equipment used automobiles, trains, ships other transportation, traffic signaling equipment, equipment used control combustions explosions, safety devices, elevators escalators, devices related electric power, equipment used finance-related fields. Product Unintended unless specifically permitted this document. disassemble, analyze, reverse-engineer, alter, modify, translate copy Product, whether whole part. Product shall used incorporated into products systems whose manufacture, use, sale prohibited under applicable laws regulations. information contained herein presented only guidance Product use. responsibility assumed TOSHIBA infringement patents other intellectual property rights third parties that result from Product. license intellectual property right granted this document, whether express implied, estoppel otherwise. ABSENT WRITTEN SIGNED AGREEMENT, EXCEPT PROVIDED RELEVANT TERMS CONDITIONS SALE PRODUCT, MAXIMUM EXTENT ALLOWABLE LAW, TOSHIBA ASSUMES LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, INCIDENTAL DAMAGES LOSS, INCLUDING WITHOUT LIMITATION, LOSS PROFITS, LOSS OPPORTUNITIES, BUSINESS INTERRUPTION LOSS DATA, DISCLAIMS EXPRESS IMPLIED WARRANTIES CONDITIONS RELATED SALE, PRODUCT, INFORMATION, INCLUDING WARRANTIES CONDITIONS MERCHANTABILITY, FITNESS PARTICULAR PURPOSE, ACCURACY INFORMATION, NONINFRINGEMENT. otherwise make available Product related software technology military purposes, including without limitation, design, development, use, stockpiling manufacturing nuclear, chemical, biological weapons missile technology products (mass destruction weapons). Product related software technology controlled under Japanese Foreign Exchange Foreign Trade U.S. Export Administration Regulations. Export re-export Product related software technology strictly prohibited except compliance with applicable export laws regulations. Please contact your TOSHIBA sales representative details environmental matters such RoHS compatibility Product. Please Product compliance with applicable laws regulations that regulate inclusion controlled substances, including without limitation, RoHS Directive. TOSHIBA assumes liability damages losses occurring result noncompliance with applicable laws regulations.
2007-11-01

TOSHIBA Transistor Silicon Epitaxial Type (PCT Process) (Transistor wi

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