TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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HN1L03FU
TOSHIBA Field Effect Transistor Silicon Channel Type
HN1L03FU
High Speed Switching Applications Analog Switch Applications
Unit
common
threshold voltage 0.8~2.5V High speed Small package =-0.5~-1.5V
Absolute Maximum Ratings 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Symbol VGSS Rating Unit
Absolute Maximum Ratings 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Symbol VGSS Rating Unit
JEDEC JEITA 2-2J1C TOSHIBA Weight: (typ.)
Marking
Absolute Maximum Ratings (Q1, Common) 25°C)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol Tstg Rating -55~150 Unit
Equivalent Circuit
(top view)
Note: Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept Methods") individual reliability data (i.e. reliability test report estimated failure rate, etc). Total rating
2007-11-01
HN1L03FU
Electrical Characteristics 25°C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition 10V, Typ. 0.11 0.15 Unit
(BR) 100A, IDSS |Yfs| (ON) Ciss Crss Coss 50V, 0.1mA 10mA 10mA, 4.0V 1MHz 1MHz 1MHz 10mA, 0~4.0V 10mA, 0~4.0V
Electrical Characteristics 25°C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition -7V, -0.5 Typ. 10.4 0.15 0.13 -1.5 Unit
(BR) -100A, IDSS |Yfs| (ON) Ciss Crss Coss -20V, -3V, -0.1mA -3V, -10mA -10mA, -2.5V -3V, 1MHz -3V, 1MHz -3V, 1MHz -3V, -10mA, 0~-2.5V -3V, -10mA, 0~-2.5V
2007-11-01
HN1L03FU
(Nch FET)
Switching Time Test Circuit
2007-11-01
HN1L03FU
(Nch FET)
2007-11-01
HN1L03FU
(Pch FET)
Switching Time Test Circuit
2007-11-01
HN1L03FU
(Pch FET)
(Q1, common)
2007-11-01
HN1L03FU
RESTRICTIONS PRODUCT
Toshiba Corporation, subsidiaries affiliates (collectively "TOSHIBA"), reserve right make changes information this document, related hardware, software systems (collectively "Product") without notice. This document information herein reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction permissible only reproduction without alteration/omission. Though TOSHIBA works continually improve Product's quality reliability, Product malfunction fail. Customers responsible complying with safety standards providing adequate designs safeguards their hardware, software systems which minimize risk avoid situations which malfunction failure Product could cause loss human life, bodily injury damage property, including data loss corruption. Before creating producing designs using, customers must also refer comply with latest versions relevant TOSHIBA information, including without limitation, this document, specifications, data sheets application notes Product precautions conditions forth "TOSHIBA Semiconductor Reliability Handbook" instructions application that Product will used with for. Customers solely responsible aspects their product design applications, including limited determining appropriateness this Product such design applications; evaluating determining applicability information contained this document, charts, diagrams, programs, algorithms, sample application circuits, other referenced documents; validating operating parameters such designs applications. TOSHIBA ASSUMES LIABILITY CUSTOMERS' PRODUCT DESIGN APPLICATIONS. Product intended general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots home electronics appliances) specific applications expressly stated this document. Product neither intended warranted equipment systems that require extraordinarily high levels quality and/or reliability and/or malfunction failure which cause loss human life, bodily injury, serious property damage serious public impact ("Unintended Use"). Unintended includes, without limitation, equipment used nuclear facilities, equipment used aerospace industry, medical equipment, equipment used automobiles, trains, ships other transportation, traffic signaling equipment, equipment used control combustions explosions, safety devices, elevators escalators, devices related electric power, equipment used finance-related fields. Product Unintended unless specifically permitted this document. disassemble, analyze, reverse-engineer, alter, modify, translate copy Product, whether whole part. Product shall used incorporated into products systems whose manufacture, use, sale prohibited under applicable laws regulations. information contained herein presented only guidance Product use. responsibility assumed TOSHIBA infringement patents other intellectual property rights third parties that result from Product. license intellectual property right granted this document, whether express implied, estoppel otherwise. ABSENT WRITTEN SIGNED AGREEMENT, EXCEPT PROVIDED RELEVANT TERMS CONDITIONS SALE PRODUCT, MAXIMUM EXTENT ALLOWABLE LAW, TOSHIBA ASSUMES LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, INCIDENTAL DAMAGES LOSS, INCLUDING WITHOUT LIMITATION, LOSS PROFITS, LOSS OPPORTUNITIES, BUSINESS INTERRUPTION LOSS DATA, DISCLAIMS EXPRESS IMPLIED WARRANTIES CONDITIONS RELATED SALE, PRODUCT, INFORMATION, INCLUDING WARRANTIES CONDITIONS MERCHANTABILITY, FITNESS PARTICULAR PURPOSE, ACCURACY INFORMATION, NONINFRINGEMENT. otherwise make available Product related software technology military purposes, including without limitation, design, development, use, stockpiling manufacturing nuclear, chemical, biological weapons missile technology products (mass destruction weapons). Product related software technology controlled under Japanese Foreign Exchange Foreign Trade U.S. Export Administration Regulations. Export re-export Product related software technology strictly prohibited except compliance with applicable export laws regulations. Please contact your TOSHIBA sales representative details environmental matters such RoHS compatibility Product. Please Product compliance with applicable laws regulations that regulate inclusion controlled substances, including without limitation, RoHS Directive. TOSHIBA assumes liability damages losses occurring result noncompliance with applicable laws regulations.
2007-11-01

TOSHIBA Field Effect Transistor Silicon Channel Type HN1L03FU

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