HN1B26FS General-Purpose Amplifier Applications High voltage

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HN1B26FS General-Purpose Amplifier Applications High voltage

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HN1B26FS
HN1B26FS
General-Purpose Amplifier Applications
High voltage high current VCEO (max) Excellent linearity mA)/hFE 0.95 (typ.) High
120~400
1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
Unit:
1.0±0.05
0.7±0.05
0.1±0.05
High
120~400
0.48
Excellent linearity -0.1 mA)/hFE -0.95 (typ.)
+0.02 -0.04
High voltage high current VCEO -100 (max)
Absolute Maximum Ratings 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO Rating Unit
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 2-1F1D
(E1) (B1) (C2) (E2) (B2) (C1)
JEDEC JEITA TOSHIBA
Weight: 0.0008 (typ.)
Absolute Maximum Ratings 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO Rating -100 Unit
Common Absolute Maximum Ratings 25°C)
Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol Tstg Rating -55~150 Unit
Note: Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept Methods") individual reliability data (i.e. reliability test report estimated failure rate, etc). Total rating
2007-11-01
HN1B26FS
Electrical Characteristics 25°C)
Characteristics Collector cutoff current Emitter cutoff current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO (Note) (sat) Test Condition Typ. 0.95 0.25 Unit
Electrical Characteristics 25°C)
Characteristics Collector cutoff current Emitter cutoff current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO (Note) (sat) Test Condition -100 Typ. -0.18 -0.1 -0.1 -0.3 Unit
Note: classification (F): 120~240, (H): 200~400 marking symbol
Marking
Type name Rank
Equivalent Circuit (top view)
2007-11-01
HN1B26FS
COLLECTOR CURRENT (mA) COMMON EMITTERTa 25°C COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT (mA) IB=0.1mA CURRENT GAIN 1000 100°C
COMMON EMITTER
VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) BASE-EMITTER SATURATION VOLTAGE VBE(sat) COMMON EMITTER IC/IB
VBE(sat) COMMON EMITTER
100°C
100°C
0.01 COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
1000
BASE CURRENT
100°C
COMMON EMITTER
BASE-EMITTER VOLTAGE
2007-11-01
HN1B26FS
-120 -2.0 -100 COLLECTOR CURRENT (mA) -0.1mA COLLECTOR-EMITTER VOLTAGE VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) COMMON EMITTER IC/IB BASE-EMITTER SATURATION VOLTAGE VBE(sat) COMMON EMITTER IC/IB -0.1 1000 COMMON EMITTERTa 25°C CURRENT GAIN -1.5 100°C
-1.0 -0.7 -0.5 -0.3 -0.2
COMMON EMITTER
-100
COLLECTOR CURRENT (mA) VBE(sat)
-0.1 100°C
-0.01 -0.1
100°C
-100
-0.1 -0.1
-100
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
-1000
BASE CURRENT (uA)
-100 100°C
COMMON EMITTER -0.1 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4 BASE-EMITTER VOLTAGE
2007-11-01
HN1B26FS
COMMON
PC*- COLLECTOR POWER DISSIPATION (mV)
AMBIENT TEMPERATURE (°C)
Total rating
2007-11-01
HN1B26FS
RESTRICTIONS PRODUCT
Toshiba Corporation, subsidiaries affiliates (collectively "TOSHIBA"), reserve right make changes information this document, related hardware, software systems (collectively "Product") without notice. This document information herein reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction permissible only reproduction without alteration/omission. Though TOSHIBA works continually improve Product's quality reliability, Product malfunction fail. Customers responsible complying with safety standards providing adequate designs safeguards their hardware, software systems which minimize risk avoid situations which malfunction failure Product could cause loss human life, bodily injury damage property, including data loss corruption. Before creating producing designs using, customers must also refer comply with latest versions relevant TOSHIBA information, including without limitation, this document, specifications, data sheets application notes Product precautions conditions forth "TOSHIBA Semiconductor Reliability Handbook" instructions application that Product will used with for. Customers solely responsible aspects their product design applications, including limited determining appropriateness this Product such design applications; evaluating determining applicability information contained this document, charts, diagrams, programs, algorithms, sample application circuits, other referenced documents; validating operating parameters such designs applications. TOSHIBA ASSUMES LIABILITY CUSTOMERS' PRODUCT DESIGN APPLICATIONS. Product intended general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots home electronics appliances) specific applications expressly stated this document. Product neither intended warranted equipment systems that require extraordinarily high levels quality and/or reliability and/or malfunction failure which cause loss human life, bodily injury, serious property damage serious public impact ("Unintended Use"). Unintended includes, without limitation, equipment used nuclear facilities, equipment used aerospace industry, medical equipment, equipment used automobiles, trains, ships other transportation, traffic signaling equipment, equipment used control combustions explosions, safety devices, elevators escalators, devices related electric power, equipment used finance-related fields. Product Unintended unless specifically permitted this document. disassemble, analyze, reverse-engineer, alter, modify, translate copy Product, whether whole part. Product shall used incorporated into products systems whose manufacture, use, sale prohibited under applicable laws regulations. information contained herein presented only guidance Product use. responsibility assumed TOSHIBA infringement patents other intellectual property rights third parties that result from Product. license intellectual property right granted this document, whether express implied, estoppel otherwise. ABSENT WRITTEN SIGNED AGREEMENT, EXCEPT PROVIDED RELEVANT TERMS CONDITIONS SALE PRODUCT, MAXIMUM EXTENT ALLOWABLE LAW, TOSHIBA ASSUMES LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, INCIDENTAL DAMAGES LOSS, INCLUDING WITHOUT LIMITATION, LOSS PROFITS, LOSS OPPORTUNITIES, BUSINESS INTERRUPTION LOSS DATA, DISCLAIMS EXPRESS IMPLIED WARRANTIES CONDITIONS RELATED SALE, PRODUCT, INFORMATION, INCLUDING WARRANTIES CONDITIONS MERCHANTABILITY, FITNESS PARTICULAR PURPOSE, ACCURACY INFORMATION, NONINFRINGEMENT. otherwise make available Product related software technology military purposes, including without limitation, design, development, use, stockpiling manufacturing nuclear, chemical, biological weapons missile technology products (mass destruction weapons). Product related software technology controlled under Japanese Foreign Exchange Foreign Trade U.S. Export Administration Regulations. Export re-export Product related software technology strictly prohibited except compliance with applicable export laws regulations. Please contact your TOSHIBA sales representative details environmental matters such RoHS compatibility Product. Please Product compliance with applicable laws regulations that regulate inclusion controlled substances, including without limitation, RoHS Directive. TOSHIBA assumes liability damages losses occurring result noncompliance with applicable laws regulations.
2007-11-01

HN1B26FS General-Purpose Amplifier Applications High voltage

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