TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSII 2SK1

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TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSII 2SK1

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2SK1489
TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSII
2SK1489
Chopper Regulator Applications
drain-source resistance High forward transfer admittance leakage current Enhancement mode (ON) (typ.) |Yfs| (typ.) Unit:
IDSS (max) (VDS (VDS
Absolute Maximum Ratings 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS Gate-source voltage Drain current (Note Symbol VDSS VDGR VGSS Tstg Rating 1000 1000 Unit
JEDEC JEITA TOSHIBA
2-21F1B
Pulse (Note
Drain power dissipation 25°C) Channel temperature Storage temperature range
Weight: 9.75 (typ.)
Note: Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change
temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept Methods) individual reliability data (i.e. reliability test report estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel case Thermal resistance, channel ambient Symbol (ch-c) (ch-a) 0.625 35.7 Unit
Note Ensure that channel temperature does exceed 150°C. This transistor electrostatic-sensitive device. Please handle with caution.
2009-09-29
2SK1489
Electrical Characteristics 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS (BR) (ON) |Yfs| Ciss Crss Coss Test Condition 1000 Typ. 2000 ±100 Unit
Turn-on time Switching time Fall time
Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff
Source-Drain Ratings Characteristics 25°C)
Characteristics Continuous drain reverse current (Note Pulse drain reverse current (Note Forward voltage (diode) Symbol IDRP VDSF Test Condition Typ. -1.6 Unit
Marking
Note line under identifies indication product Labels. Part abbreviation code) underlined: [[Pb]]/INCLUDES Underlined: [[G]]/RoHS COMPATIBLE [[G]]/RoHS [[Pb]]
TOSHIBA
2SK1489 JAPAN
Note
Please contact your TOSHIBA sales representative details environmental matters such RoHS compatibility Product. RoHS Directive 2002/95/EC European Parliament Council January 2003 restriction certain hazardous substances electrical electronic equipment.
2009-09-29
2SK1489
2009-09-29
2SK1489
2009-09-29
2SK1489
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2SK1489
RESTRICTIONS PRODUCT
Toshiba Corporation, subsidiaries affiliates (collectively "TOSHIBA"), reserve right make changes information this document, related hardware, software systems (collectively "Product") without notice. This document information herein reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction permissible only reproduction without alteration/omission. Though TOSHIBA works continually improve Product's quality reliability, Product malfunction fail. Customers responsible complying with safety standards providing adequate designs safeguards their hardware, software systems which minimize risk avoid situations which malfunction failure Product could cause loss human life, bodily injury damage property, including data loss corruption. Before creating producing designs using, customers must also refer comply with latest versions relevant TOSHIBA information, including without limitation, this document, specifications, data sheets application notes Product precautions conditions forth "TOSHIBA Semiconductor Reliability Handbook" instructions application that Product will used with for. Customers solely responsible aspects their product design applications, including limited determining appropriateness this Product such design applications; evaluating determining applicability information contained this document, charts, diagrams, programs, algorithms, sample application circuits, other referenced documents; validating operating parameters such designs applications. TOSHIBA ASSUMES LIABILITY CUSTOMERS' PRODUCT DESIGN APPLICATIONS. Product intended general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots home electronics appliances) specific applications expressly stated this document. Product neither intended warranted equipment systems that require extraordinarily high levels quality and/or reliability and/or malfunction failure which cause loss human life, bodily injury, serious property damage serious public impact ("Unintended Use"). Unintended includes, without limitation, equipment used nuclear facilities, equipment used aerospace industry, medical equipment, equipment used automobiles, trains, ships other transportation, traffic signaling equipment, equipment used control combustions explosions, safety devices, elevators escalators, devices related electric power, equipment used finance-related fields. Product Unintended unless specifically permitted this document. disassemble, analyze, reverse-engineer, alter, modify, translate copy Product, whether whole part. Product shall used incorporated into products systems whose manufacture, use, sale prohibited under applicable laws regulations. information contained herein presented only guidance Product use. responsibility assumed TOSHIBA infringement patents other intellectual property rights third parties that result from Product. license intellectual property right granted this document, whether express implied, estoppel otherwise. ABSENT WRITTEN SIGNED AGREEMENT, EXCEPT PROVIDED RELEVANT TERMS CONDITIONS SALE PRODUCT, MAXIMUM EXTENT ALLOWABLE LAW, TOSHIBA ASSUMES LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, INCIDENTAL DAMAGES LOSS, INCLUDING WITHOUT LIMITATION, LOSS PROFITS, LOSS OPPORTUNITIES, BUSINESS INTERRUPTION LOSS DATA, DISCLAIMS EXPRESS IMPLIED WARRANTIES CONDITIONS RELATED SALE, PRODUCT, INFORMATION, INCLUDING WARRANTIES CONDITIONS MERCHANTABILITY, FITNESS PARTICULAR PURPOSE, ACCURACY INFORMATION, NONINFRINGEMENT. otherwise make available Product related software technology military purposes, including without limitation, design, development, use, stockpiling manufacturing nuclear, chemical, biological weapons missile technology products (mass destruction weapons). Product related software technology controlled under Japanese Foreign Exchange Foreign Trade U.S. Export Administration Regulations. Export re-export Product related software technology strictly prohibited except compliance with applicable export laws regulations. Please contact your TOSHIBA sales representative details environmental matters such RoHS compatibility Product. Please Product compliance with applicable laws regulations that regulate inclusion controlled substances, including without limitation, RoHS Directive. TOSHIBA assumes liability damages losses occurring result noncompliance with applicable laws regulations.
2009-09-29

TOSHIBA Field Effect Transistor Silicon Channel Type (-MOSII 2SK1

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