VT6Z1 Structure Silicon epitaxial planar transistor Dimensions (U

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VT6Z1 Structure Silicon epitaxial planar transistor Dimensions (U

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Power management (dual transistors)
VT6Z1
Structure Silicon epitaxial planar transistor Dimensions (Unit
0.14
Features Very small package with transistors.
0.92
0.13 0.05
Applications Switch, driver
Abbreviated symbol
Each lead same dimensions.
0.16 0.05
0.14
0.05
VMT6
UNIT
Packaging specifications
Package Code Type VT6Z1 Basic ordering unit (pieces) Taping 8000
Inner circuit
Emitter Base Collector Emitter Base Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1)
Absolute maximum ratings (Ta=25°C) <Tr1> (PNP)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Pw=1mS Single pulse
Symbol VCBO VCEO VEBO
Limits -200 -400
Unit
<Tr2> (NPN)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Pw=1mS Single pulse
Symbol VCBO VCEO VEBO
Limits
Unit
<Tr1 Tr2> Parameter
Total Power dissipation Element Junction temperature Storage temperature
Symbol Tstg
Limits +150
Unit
Each terminal mounted recommended land
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
VT6Z1
Electrical characteristics (Ta=25°C) <Tr1> (PNP)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) Min. Typ. -0.12 Max. -0.1 -0.1 -0.30 Unit -1mA -50µA -50µA VCB=-20V VEB=-5V IC=-100mA, IB=-10mA VCE=-2V, IC=-1mA Conditions
Data Sheet
VCE=-10V, IE=10mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
<Tr2> (NPN)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) Min. Typ. 0.12 Max. 0.30 Unit IC=1mA IC=50µA IE=50µA VCB=20V VEB=5V IC=100mA, IB=10mA VCE=2V, IC=1mA VCE=10V, IE=-10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
VT6Z1
Electrical characteristics curves <Tr1> (PNP)
-1000
COLLECTOR CURRENT (mA)
Data Sheet
COLLECTOR CURRENT (mA)
Ta=125°C 25°C -55°C
-100
IB=1.0mA IB=0.9mA IB=0.8mA
IB=0.7mA IB=0.6mA IB=0.5mA IB=0.4mA IB=0.3mA IB=0.2mA
1000
VCE=2V
-0.1 -0.01
CURENT GAIN
-100
IB=0.1mA
Ta=25°C
IB=0mA
Ta=125°C 25°C -55°C
-0.2
-0.4
-0.6
-0.8
-0.1
-100
-1000
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
COLLECTOR SATURATION VOLTAGE VCE(sat)
COLLECTOR SATURATION VOLTAGE VCE(sat)
Ta=25°C
TRANSITION FREQUENCY (MHz)
IC/IB= 10/1
Ta=125°C 25°C -55°C
1000
Ta=25°C
IC/IB 20/1 IC/IB =10/1
-0.1
-0.1
-0.01 -100 -1000 COLLECTOR CURRENT (mA)
-0.01 -100 -1000 COLLECTOR CURRENT (mA)
-0.1 -100 -1000 EMITTER CURRENT (mA)
(pF) (pF)
Ta=25°C f=1MHz IE=0 IC=0
-0.1 -100
-0.01
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE VEB(V)
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
VT6Z1
<Tr2> (NPN)
IB=1.0mA IB=0.9mA IB=0.8mA
Data Sheet
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
1000 0.01
Ta=125°C 25°C -55°C
IB=0.7mA IB=0.5mA IB=0.4mA IB=0.3mA IB=0.2mA IB=0.1mA
CURENT GAIN
1000
VCE=2V
IB=0.6mA
Ta=25°C
IB=0mA
Ta=125°C 25°C -55°C 1000 COLLECTOR CURRENT (mA)
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
TRANSITION FREQUENCY (MHz)
COLLECTOR SATURATION VOLTAGE VCE(sat)
COLLECTOR SATURATION VOLTAGE VCE(sat)
Ta=25°C
IC/IB= 10/1
Ta=125°C 25°C -55°C
1000
Ta=25°C
IC/IB 20/1 IC/IB =10/1
0.01 1000
0.01 1000
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
EMITTER CURRENT (mA)
(pF) (pF)
Ta=25°C f=1MHz IE=0 IC=0
0.01
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE VEB(V)
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
Notice
Notes
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VT6Z1 Structure Silicon epitaxial planar transistor Dimensions (U

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