VT6X11 Structure silicon epitaxial planar transistor Dimensions (

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VT6X11 Structure silicon epitaxial planar transistor Dimensions (

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Power management (dual transistors)
VT6X11
Structure silicon epitaxial planar transistor Dimensions (Unit
0.14
0.13 0.05
Applications Current mirror circuits
Abbreviated symbol
Each lead same dimensions.
Features Very small package with transistors. Suitable current mirror circuits.
0.92
0.14
0.16 0.05
VMT6
0.05
UNIT
Packaging specifications
Package Code Type VT6X11 Basic ordering unit (pieces) Taping 8000
Inner circuit
Base Emitter Emitter Collector Collector Base Collector Base (Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2)
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power dissipation Junction temperature Range storage temperature
Pw=1mS Single pulse Each terminal mounted recommended land
Symbol VCBO VCEO VEBO Element Tstg
Limits +150
Unit
Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain current gain ratio Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) (Tr1) (Tr2) Min. Typ. 0.12 Max. 0.30 Unit IC=1mA IC=50µA IE=50µA VCB=20V VEB=5V IC=100mA, IB=10mA VCE=2V, IC=1mA VCE=2V, IC=1mA VCE=10V, IE=-10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
VT6X11
Electrical characteristics curves
IB=1.0mA IB=0.9mA IB=0.8mA
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA)
Data Sheet
1000 0.01
Ta=125°C 25°C -55°C
IB=0.7mA IB=0.5mA IB=0.4mA IB=0.3mA IB=0.2mA IB=0.1mA
CURENT GAIN
1000
VCE=2V
IB=0.6mA
Ta=25°C
IB=0mA
Ta=125°C 25°C -55°C 1000 COLLECTOR CURRENT (mA)
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
TRANSITION FREQUENCY (MHz)
COLLECTOR SATURATION VOLTAGE VCE(sat)
COLLECTOR SATURATION VOLTAGE VCE(sat)
Ta=25°C
IC/IB= 10/1
Ta=125°C 25°C -55°C
1000
Ta=25°C
IC/IB 20/1 IC/IB =10/1
0.01 1000
0.01 1000
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
EMITTER CURRENT (mA)
(pF) (pF)
Ta=25°C f=1MHz IE=0 IC=0
0.01
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE VEB(V)
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
Notice
Notes
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