TOSHIBA Field Effect Transistor Silicon Epitaxial Type (PCT Process) (

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TOSHIBA Field Effect Transistor Silicon Epitaxial Type (PCT Process) (

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2SD1784
TOSHIBA Field Effect Transistor Silicon Epitaxial Type (PCT Process) (Darlington)
2SD1784
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
High current gain: 4000 (min) (VCE saturation voltage: (sat) (max) Unit:
Absolute Maximum Ratings 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO (Note Tstg Rating 1000 Unit
JEDEC
SC-62 2-5K1A
JEITA TOSHIBA
Note 2SD1784 mounted ceramic substrate (250
Weight: 0.05 (typ.) Note Using continuously under heavy loads (e.g. application high temperature/current/voltage significant change temperature, etc.) cause this product decrease reliability significantly even operating conditions (i.e. operating temperature/current/voltage, etc.) within absolute maximum ratings. Please design appropriate reliability upon reviewing Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept Methods) individual reliability data (i.e. reliability test report estimated failure rate, etc).
2006-11-21
2SD1784
Electrical Characteristics 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage current gain Collector-emitter saturation voltage Base-emitter saturation voltage Turn-on time Symbol ICBO IEBO (BR) (sat) (sat) Switching time Storage time tstg Test Condition INPUT DUTY CYCLE 4000 Typ. 0.20 Unit
OUTPUT
Fall time
Equivalent Circuit
COLLECTOR BASE EMITTER
Marking
Part abbreviation code)
line indicates lead (Pb)-free package lead (Pb)-free finish.
2006-11-21
2SD1784
Common emitter 25°C Common emitter 100°C
(mA)
Collector current
Collector current
(mA)
Collector-emitter voltage
Collector-emitter voltage
Common emitter -50°C 50000 30000 100000
Common emitter
(mA)
current gain
Collector current
100°C 10000 5000 3000
1000 0.003 0.01 0.03
Collector-emitter voltage
Collector current
Common emitter
(sat)
Collector-emitter saturation voltage (sat)
Common emitter -50°C IC/IB 1000
Collector current
100°C
0.003
0.01
0.03
Collector current
Base-emitter voltage
2006-11-21
2SD1784
(sat)
Common emitter IC/IB 1000
Safe Operating Area
(pulse) (continuous)
Base-emitter saturation voltage (sat)
-50°C
Mounted ceramic substrate (250 0.8) Single nonrepetitive pulse 25°C Curves must derated linearly 0.01 with increase temperature. operation
Collector current
0.003 0.01 0.03
0.05 0.03
Collector current
(mA)
Collector-emitter voltage
Mounted ceramic substrate (250 25°C
Collector power dissipation
Ambient temperature (°C)
2006-11-21
2SD1784
RESTRICTIONS PRODUCT
information contained herein subject change without notice.
20070701-EN
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed document shall made customer's risk. products described this document shall used embedded downstream products which manufacture, and/or sale prohibited under applicable laws regulations. information contained herein presented only guide applications products. responsibility assumed TOSHIBA infringements patents other rights third parties which result from use. license granted implication otherwise under patents other rights TOSHIBA third parties. Please contact your sales representative product-by-product details this document regarding RoHS compatibility. Please these products this document compliance with applicable laws regulations that regulate inclusion controlled substances. Toshiba assumes liability damage losses occurring result noncompliance with applicable laws regulations.
2006-11-21

TOSHIBA Field Effect Transistor Silicon Epitaxial Type (PCT Process) (

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