M3D087 PBSS5540Z VCEsat transistor Product data sheet Supers

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M3D087 PBSS5540Z VCEsat transistor Product data sheet Supers

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M3D087
PBSS5540Z VCEsat transistor
Product data sheet Supersedes data 2001 2001
Semiconductors
Product data sheet
VCEsat transistor
FEATURES collector-emitter saturation voltage High current capability Improved device reliability reduced heat generation. APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor lamp drivers) MOSFET driver applications. DESCRIPTION VCEsat transistor SOT223 plastic package. complement: PBSS4540Z. MARKING TYPE NUMBER PBSS5540Z MARKING CODE PB5540
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PBSS5540Z
QUICK REFERENCE DATA SYMBOL VCEO RCEsat PINNING base collector emitter collector DESCRIPTION PARAMETER emitter-collector voltage collector current (DC) peak collector current equivalent on-resistance UNIT
handbook,
MAM288
Fig.1 Simplified outline (SOT223) symbol.
2001
Semiconductors
Product data sheet
VCEsat transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO Ptot Tstg Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb note Tamb note CONDITIONS open emitter open base open collector MIN.
PBSS5540Z
MAX. 1.35 +150 +150
UNIT
Device mounted printed-circuit board, single-sided copper, tinplated, mounting collector cm2. Device mounted printed-circuit board, single-sided copper, tinplated, mounting collector cm2. other mounting conditions, "Thermal considerations SOT223 General Part associated Handbook". THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board, single-sided copper, tinplated, mounting collector cm2. PARAMETER thermal resistance from junction ambient CONDITIONS free air; note VALUE UNIT
2001
Semiconductors
Product data sheet
VCEsat transistor
CHARACTERISTICS Tamb unless otherwise specified. SYMBOL ICBO IEBO PARAMETER collector-base cut-off current emitter-base cut-off current current gain CONDITIONS -500 note note note VCEsat collector-emitter saturation voltage -500 -200 RCEsat VCEsat VBEsat VBEon Note Pulse test: 0.02. equivalent on-resistance collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance -200 note -500 -500 -100 MIN.
PBSS5540Z
TYP. -120 -110 -250 -0.8
MAX. -100 -100 -120 -170 -160 -375 -1.3 -1.25
UNIT
2001
Semiconductors
Product data sheet
VCEsat transistor
PBSS5540Z
handbook,
1000
MGU391
handbook,
-1.2
MGU393
-0.8
-0.4
-102
-103
-104 (mA)
-10-1
-102
-103 -104 (mA)
Tamb Tamb Tamb
Tamb Tamb Tamb
Fig.2
current gain function collector current; typical values.
Fig.3
Base-emitter voltage function collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
MGU395
handbook,
-1.2
MGU394
VBEsat
-0.8
-0.4
-10-1
-102
-103 -104 (mA)
-10-1
-102
-103 -104 (mA)
IC/IB Tamb Tamb Tamb
IC/IB Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Base-emitter saturation voltage function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat transistor
PBSS5540Z
handbook,
MGU392
handbook, halfpage RCEsat
MGU396
(10)
-0.4
-0.8
-1.2
-1.6
10-1 -10-1
-102
-103 -104 (mA)
Tamb -150 -135 -120 -105 (10)
IC/IB Tamb Tamb Tamb
Fig.7 Fig.6 Collector current function collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat transistor
PACKAGE OUTLINE
PBSS5540Z
Plastic surface mounted package; collector good heat transfer; leads
SOT223
detail
scale
DIMENSIONS original dimensions) UNIT 0.10 0.01 0.80 0.60 0.32 0.22 0.95 0.85
OUTLINE VERSION SOT223
REFERENCES JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001
Semiconductors
Product data sheet
VCEsat transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes Please consult most recently issued document before initiating completing design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS5540Z
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2001
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/04/pp9 Date release: 2001 Document order number: 9397 08434

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