Planar Epitaxial Transistor TO-92 4.32 4.45 3.18 0.41 0.35 1
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BC556
Planar Epitaxial Transistor
TO-92
4.32 4.45 3.18 0.41 0.35 1.14 1.14 12.70
5.33 4.19 0.50 0.50 1.40 1.53
1.COLLECTOR
2.BASE
EMITTER
Absolute Maximun Ratings (Ta=25oC)
Symbol Collector-Emmiter Voltage Collector-Emmitor Voltage Collector Base Voltage Emitter Base Voltage Collector current Continuous Peak Base Current Peak Emitter Current Peak Collector Power Dissapation Operating Storage Junction THERMAL RESISTANCE Junction ambient Rth(j-a) VCEO VCES VCBO VEBO Tstg Ratings (-55 +150) Unit
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Characteristics Ratings
25°C unless otherwise specified)
Symbol Collector Emitter Voltage Collector Base voltage Emitter Base Voltage Collector Current VCEO VCBO VEBO ICBO
Test Conditions 2mA, IB=0 100uA, IE=0 100uA, 30V, 30V, 150°C 80V, 125°C 10mA, 0.5mA 100mA, 10mA, 0.5mA 100mA, 2mA, 10mA,
min.
Typ.
max.
Unit
Collector Current Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage
ICES (SAT) (SAT) (SAT)
0.55
0.09 0.25 0.66
0.65 0.82
Dynamics Characteristics
Transition Frequency Collector Output Capacitance Nose Figure 10mA, 100MHz 10V, 1MHz 0.2mA
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