M3D302 BC817DPN NPN/PNP general purpose transistor Product d

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M3D302 BC817DPN NPN/PNP general purpose transistor Product d

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M3D302
BC817DPN NPN/PNP general purpose transistor
Product data sheet Supersedes data 2002 2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
FEATURES High current (500 total power dissipation Replaces SOT23 packaged transistors same area. APPLICATIONS General purpose switching amplification Complementary driver Half full bridge driver. DESCRIPTION NPN/PNP transistor pair SOT457 (SC-74) plastic package. MARKING
handbook, halfpage
BC817DPN
QUICK REFERENCE DATA SYMBOL VCEO PINNING emitter base collector DESCRIPTION TR1; TR1; TR1; PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. UNIT
TYPE NUMBER BC817DPN
MARKING CODE
view
MAM445
Fig.1
Simplified outline (SOT457) symbol.
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. Tamb note Tamb note MAX. UNIT
transistor; transistor with negative polarity VCBO VCEO VEBO Ptot Tstg Tamb device Ptot Note Device mounted printed-circuit board; single sided copper; tinplated; mounting collector cm2. 2002 total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector +150 +150
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Note PARAMETER thermal resistance from junction note ambient CONDITIONS
BC817DPN
VALUE
UNIT
Device mounted printed-circuit board; single sided copper; tinplated; mounting collector cm2. CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
transistor unless otherwise specified; transistor with negative polarity ICBO IEBO VCEsat collector-base cut-off current emitter-base cut-off current current gain note note collector-emitter saturation voltage note base-emitter voltage notes
transistor collector capacitance transition frequency
transistor Notes Pulse test: 0.02. decreases approximately mV/K with increasing temperature. collector capacitance transition frequency
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MBL747
1000
MBL748
(mA)
(10)
10-1
(mA)
(NPN) (NPN) Tamb Tamb Tamb 13.5 10.5 (10)
Fig.2
current gain function collector current; typical values.
Fig.3
Collector current function collector-emitter voltage; typical values.
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MBL749
1200 (mV) 1000
MBL750
VCEsat (mV)
10-1
(mA)
10-1
(mA)
(NPN) IC/IB Tamb Tamb Tamb
(NPN) Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Base-emitter voltage function collector current; typical values.
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MHC324
-1000 (mA)
MHC325
-800
-600
-400
-200
(10)
-10-1
-102
-103 (mA)
(PNP) (PNP) Tamb Tamb Tamb -6.3 -5.6 -4.9 -4.2 -3.5 -2.8 -2.1 -1.4 (10) -0.7
Fig.6
current gain function collector current; typical values.
Fig.7
Collector current function collector-emitter voltage; typical values.
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
-103 handbook, halfpage VCEsat (mV) -102
MHC326
-1200 (mV) -1000
MHC327
-800
-600
-400
-10-1
-102
-103 (mA)
-200 -10-1
-102
-103 (mA)
(PNP) IC/IB Tamb Tamb Tamb
(PNP) Tamb Tamb Tamb
Fig.8
Collector-emitter saturation voltage function collector current; typical values.
Fig.9
Base-emitter voltage function collector current; typical values.
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
PACKAGE OUTLINE
BC817DPN
Plastic surface mounted package; leads
SOT457
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.013 0.40 0.25 0.26 0.10 0.95 0.33 0.23
OUTLINE VERSION SOT457
REFERENCES JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2002
Semiconductors
Product data sheet
NPN/PNP general purpose transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes Please consult most recently issued document before initiating completing design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BC817DPN
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2002
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/02/pp10 Date release: 2002 Document order number: 9397 10583

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