VT6T12 Structure silicon epitaxial planar transistor Dimensions (

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VT6T12 Structure silicon epitaxial planar transistor Dimensions (

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Power management (dual transistors)
VT6T12
Structure silicon epitaxial planar transistor Dimensions (Unit
0.14
0.13 0.05
Applications Current mirror circuits Packaging specifications
Package Code Type VT6T12
Abbreviated symbol
Each lead same dimensions.
Features Very small package with transistors. Suitable current mirror circuits.
0.92
0.14
0.16 0.05
VMT6
0.05
UNIT
inner circuit
Taping 8000
Base Emitter Emitter Collector Collector Base Collector Base (Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2)
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power dissipation Junction temperature Range storage temperature
Pw=1mS Single pulse Each terminal mounted recommended land
Symbol VCBO VCEO VEBO Element Tstg
Limits
-100 -200
Unit
+150
Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain current gain ratio Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) (Tr1) (Tr2) Min. Typ. -0.15 Max. -0.1 -0.1 -0.40 Unit -1mA -50µA -50µA VCB= -50V VEB= -50mA, -5mA VCE= -6V, -1mA VCE= -6V, -1mA VCE= -10V, IE=10mA, f=100MHz VCB= -10V, IE=0A, f=1MHz Conditions
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2009 ROHM Co., Ltd. rights reserved.
2009.09 Rev.A
VT6T12
Electrical characteristics curves
IB=500uA
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Data Sheet
IB=450uA IB=400uA IB=350uA IB=300uA
-100
Ta=125
IB=250uA IB=200uA IB=150uA IB=100uA IB=50uA
1000
CURENT GAIN
VCE=5V
-0.1
-0.01
-0.2 -0.4 -0.6 -0.8 BASE EMITTER VOLTAGE
Ta=25
IB=0uA
Ta=125
-0.1
-100
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
TRANSITION FREQUENCY (MHz)
COLLECTOR SATURATION VOLTAGE VCE(sat) COLLECTOR SATURATION VOLTAGE VCE(sat)
Ta=25 IC/IB 20/1 IC/IB 10/1
IC/IB 10/1 Ta=125
1000
-0.1
-0.1
-0.01 -100 COLLECTOR CURRENT (mA)
-0.01 -100
-0.1 -100 -1000
COLLECTOR CURRENT (mA)
EMITTER CURRENT (mA)
(pF) (pF)
Ta=25 f=1MHz IE=0 IC=0
-0.01 -0.1 -100 COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE VEB(V)
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2009 ROHM Co., Ltd. rights reserved.
2009.09 Rev.A
Notice
Notes
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