VT6T1 Structure silicon epitaxial planar transistor Dimensions (U

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VT6T1 Structure silicon epitaxial planar transistor Dimensions (U

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Power management (dual transistors)
VT6T1
Structure silicon epitaxial planar transistor Dimensions (Unit
0.14 0.05
VMT6
Features Very small package with transistors. Applications Switch, driver
0.92
0.14
0.16 0.05 0.13 0.05
Abbreviated symbol
Each lead same dimensions.
UNIT
Packaging specifications
Package Code Type VT6T1 Basic ordering unit (pieces) Taping 8000
Inner circuit
Emitter Base Collector Emitter Base Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1)
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power dissipation Element Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
Limits -200 -400 +150
Unit
Pw=1mS Single pulse Each terminal mounted recommended land
Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. -0.1 Unit -1mA -50µA -50µA VCB= -20V VEB= -100mA, -10mA VCE= -2V, -1mA VCE= -10V, IE=10mA, f=100MHz VCB= -10V, IE=0A, f=1MHz Conditions
-0.12
-0.1 -0.30
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
VT6T1
Electrical characteristics curves
-1000
COLLECTOR CURRENT (mA)
Data Sheet
COLLECTOR CURRENT (mA)
Ta=125°C 25°C -55°C
-100
IB=1.0mA IB=0.9mA IB=0.8mA
IB=0.7mA IB=0.6mA IB=0.5mA IB=0.4mA IB=0.3mA IB=0.2mA
1000
VCE=2V
-0.1 -0.01
CURENT GAIN
-100
IB=0.1mA
Ta=25°C
IB=0mA
Ta=125°C 25°C -55°C
-0.2
-0.4
-0.6
-0.8
-0.1
-100
-1000
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
COLLECTOR SATURATION VOLTAGE VCE(sat)
COLLECTOR SATURATION VOLTAGE VCE(sat)
Ta=25°C
IC/IB 20/1 IC/IB =10/1
-0.1
Ta=125°C 25°C -55°C -0.1
TRANSITION FREQUENCY (MHz)
IC/IB= 10/1
1000
Ta=25°C
-0.01 -100 -1000 COLLECTOR CURRENT (mA)
-0.01 -100 -1000 COLLECTOR CURRENT (mA)
-0.1 -100 -1000 EMITTER CURRENT (mA)
(pF) (pF)
Ta=25°C f=1MHz IE=0 IC=0
-0.1 -100
-0.01
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE VEB(V)
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2009 ROHM Co., Ltd. rights reserved.
2009.06 Rev.A
Notice
Notes
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VT6T1 Structure silicon epitaxial planar transistor Dimensions (U

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