date release: November 2005 document order number: 9397 15371 The

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Appendix Manual edition
date release: November 2005 document order number: 9397 15371
Thermal design considerations discretes Introduction 1.1.1 Definitions 1.1.2 with primary heat sinking ambient 1.1.3 with heat sinking ambient into solder leads (lead frame 1.1.4 with heat sinking into ambient into solder leads (bond wire Example applied JFET family 1.2.1 Derating diagram PMBFJ620 SOT363 1.2.2 Cross checking: Derating diagram BFC505 SOT353 1.2.3 Cross checking: Derating diagram BFG480W SOT343R GH404 with TZA30x6 2.1. Introduction 2.2. Connecting GH404 board 2.3. ROSA 2.3.1 Connection 2.3.2 Construction 2.3.3 Design hints 2.4. Measurements 2.4.1 Measurement results TZA3026 2.4.2 Measurement results TZA3036 2.4.3 Measurement results TZA3046 2.4.4 Measurement set-ups 2.5. Appendix 2.5.1 Schematics 2.5.2 Component placement 2.6. Disclaimers 2.7. Licenses Application-Basics Frequency spectrum Function antenna Transistor semiconductor process 3.3.1 General-purpose small-signal bipolar 3.3.2 Double polysilicon design basics fundamentals 4.1.1 waves 4.1.2 reflection coefficient 4.1.3 Differences between ideal practical passive devices 4.1.4 Smith chart Small signal amplifier parameters 4.2.1 Transistor parameters, microwave 4.2.2 Definition s-parameters 4.2.2.1 2-Port Network definition 4.2.2.2 3-Port Network definition amplifier design fundamentals 4.3.1 bias point adjustment MMICs 4.3.2 bias point adjustment transistors 4.3.3 Gain definitions 4.3.4 Amplifier stability
Thermal design considerations discretes
Introduction
semiconductor device several electrically thermally limiting parameters given data sheet.To right shown Safe Operating ARea (SOAR).The SOAR limits static bias setting dynamic operating point. current overload crossing IC(max) boarder burn power conducting channel melt bond wires. Crossing VCE(max) border cause junction breakdown flashover. Crossing hyperbolic power dissipation border Ptot will thermal and/or electrical over stress (EOS) causing partial burn outs (crystal) active areas. Some devices allow limit crossed pulsed operation. Crossing border long time cause reliability problems, though, with reduction lifetime permanent non-repairable damage device.This chapter will primarily discuss thermal limit specified maximum semiconductor junction temperature total power dissipation Ptot thermal resistance Rth. Typically, data sheets give thermal resistance order primary heat sinking from junction case surrounded ambient.With smaller smaller packages, cooling radiation ambient rapidly dropping. Power dissipation sinking effects that could ignored leaded large-scale packages therefore become important very small packages.
1.1.1 Definitions
ThermalThermal conductivity from coldcold point: conductivity from point:
Simplified: Simplified:
TCold THot
compared Ohm's law: compared law:
Series cascaded Rth's added. parallel-cascaded Rth's, conductivities added (valid common temperature gradients). Ptot: typ. 150°C 175°C (see data sheet details) Ambient temperature [°C] Solder point temperature [°C] Power dissipation Limiting total power dissipation
Philips Manual Edition Appendix
1.1.2 with primary heat sinking ambient
Junction
Case
Ambient
Rth(J-C)
Rth(C-A)
th(J
data sheet gives limiting junction temperature generated active semiconductor area (crystal).The resulting power dissipation radiated into case (package), which limited thermal conductivity Rth(J-C).The thermally loaded package radiates heat into ambient with certain efficiency thermal conductivity Rth(C-A).Typically, data sheets give Rth(J-A)=Rth(J-C)+Rth(C-A).The radiated power from case ambient function contacting device's surface, circulates, ambient temperature several more factors. Heatsinks improve thermal conductivity increasing surface contacting (decreasing Rth(C-A)) causing thermal currents like drawing effect chimney.
1.1.3 with heat sinking ambient into solder leads (lead frame
lead frame solder leads have thermal junctions (see package TBA810 audio power amplifier).
Junction Rth(J-C) Rth(J-F)
Case
Ambient
Rth(C-A) Rth(F-S)
Junction
Lead Frame
Solder point
Lead Frame used heat sinking
small packages, measurable amount thermal power sinks leads into solder point. From there, heat radiated into lines substrate. Because this, definition thermal resistance from case air, Rth(J-A), becomes less important packages which have only small surfaces contact with air.There, thermal resistance from case solder point Rth(C-S). becomes much more dominant. Philips therefore uses Rth(J-S) transistors like PMBFJ620 SOT363 package. Total thermal power sinking from package Power sinking ambient Power sinking solder point
Philips DQFN Package Philips DQFN Package Solder Point Solder Point
Philips Manual Edition Appendix
Thermal pictures, QLPAK LFPAK package
Thermopicture: Thermal pictures, QLPAK LFPAK package frame001.100
Plastic Chip Leadframe
(Rth(J Rth(F
(Rth(J Rth(C-
contrast package, primary thermal pathway QLPAK LFPAK packages straight down through metal leadframe package. This much more direct pathway typical thermal resistance less than similar that found power packages such D-Pak D2-Pak, enormous improvement that found SO8.
(Rth Rth(C (Rth(J Rth(F
(Rth (Rth
Rth(C Rth(F th(J
(10) (11)
(Rth (Rth (Rth
th(J th(J
Substituting (12)
primary heat sinking into solder point: (13)
(14) (15) (16)
(Rth
(Rth(J Rth(C (Rth(J Rth(F
Rth(C-A) very large negligible heat sinking ambient.
(17)
Equation (15) shows that, primary heat sinking into solder point, influence neglected.
Philips Manual Edition Appendix
1.1.4 with heat sinking into ambient into solder leads (bond wire
lead frame solder lead have thermal junctions.That means device's active contacts only available bond-pads, primary heat generated die's surface. Because this, heat sink through silver-filled epoxy attached lead-frame neglected.
Junction Rth(J-C)
Case
Ambient Rth(C-A)
Rth(C-S) Junction Case Solder point
This indicates different thermal conduction streams into ambient (PA) solder-point (PS).
SolderThermopicture: Pointframe004.100 Primary Heat sinking
Solder Point Plastic Chip Leadframe
Rth(J
Equation also written:
Primary Heat sinking
package, primary thermal pathway through thin component legs package. Very little heat pass through insulating plastic directly under chip. This results high thermal resistance from device junction board typically K/W.
Thermal pictures package
Thermal pictures package
Rth( Rth( Rth(
Rewriting Substituting into
Philips Manual Edition Appendix
Rth( Rth(
(10)
(11)
Rth(J Rth( Rth(J Rth(J
(12)
(13)
Rth( (Rth(C-S Rth(C-
Rth(
Rth(J (Rth(C Rth(C (Rth(C Rth(C Rth( (15) (Rth(C Rth(C
(14) Rth(C-A) very large negligible heat sinking ambient. (16)
th(J th(J
(18) (Rth(C Rth(C
(17) (19)
th(J
good thermal heat sink from case heat sinking solder point: (20) (21)
th(J Rth(C
PMBFJ620 Power derating curve Double loaded Single loaded
Example applied PMBFJ620 data sheet: Single loaded: Rth(J-S)=315K/W Double loaded: Rth(J-S)=160K/W Max. Junction Temperature:
Philips Manual Edition Appendix
Example applied JFET family
Type J310 PMBFJ310 PMBFJ620 Package TO92 SOT23 SOT363 Function single JFET single JFET double JFET [K/W] Rth(j-a)=250 Rth(j-a)=500 Rth(j-s)=315 Rth(j-s)=160 PTOT [mW] Condition assy assy single loaded double loaded
Example: JFET with biasing VDS=9V, ID=10mA. Determine maximum environment temperature. PD=VDS*ID=9V*10mA=90mW
single JFET package:
(Rth
J310 TO92: PMBFJ310 SOT23:
150C (400 90mW
150°C (250 90mW 127.5°C
PMBFJ620 SOT363 package:
th(J
Single loaded: JFET used PDS=PT=100mW RthS(J-S)=315K/W Double loaded: JFETs used PDD=2*PT=180mW RthD(J-S)=160K/W
150°C (315K 90mW
150°C 180mW
Only JFET used single load, this loaded 190mW. JFETs used double load, each JFET loaded 95mW.
max. solder point temperature max. load Single loaded: Double loaded:
150°C (315K 190mW
150°C 190mW
Philips Manual Edition Appendix
1.2.1 Derating diagram PMBFJ620 SOT363
Tabel Limiting values accordance with Absolute Maximum Rating System (IEC 60134) Symbol Parameter Conditions drain-source voltage VGSO VGDO Ptot Tstg gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature junction temperature 90°C open drain open source
+150
Unit
Table Thermal characteristics Symbol Rth(j-s) Parameter thermal resistance from junction soldering points Conditions single loaded double loaded temperature soldering point gate pins, Figure *315 *160 Unit
Deviation double loaded
single loaded
Example trace crossing border:
Double loaded:
Single loaded:
150°C 100°C 158.7mW
150°C 100°C 312.5mW
Philips Manual Edition Appendix
1.2.2 Cross checking: Derating diagram BFC505 SOT353
Ptot Tstg collector current total power dissipation storage temperature junction temperature +175
118°C; note
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point; note
CONDITIONS single loaded double loaded
VALUE
UNIT
Note limiting values Thermal characteristics. temprature soldering point collector pin.
435mW
217mW
175°C 125°C 217mW 175°C 125°C Double loaded trace crossing border: 435mW 115K
Single loaded trace crossing border:
diagram confirms algebraic evaluation!!
Philips Manual Edition Appendix
1.2.3 Cross checking: Derating diagram BFG480W SOT343R
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134) SYMBOL VCBO VCEO VEBO Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector 60°C; note Fig. 14.5 +150 UNIT
Note temperature soldering point emitter pins. THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point VALUE UNIT
150°C 100°C 200mW
150°C (250 360mW 60°C
diagram confirms algebraic evaluation!!
Philips Manual Edition Appendix
GH404 with TZA30x6
Introduction
TZA3026,TZA3036 transimpedance amplifiers used SDH/Sonet FiberChannel/Gigabit Ethernet applications. general, these devices delivered dies only. this reason, GH404 application board been designed enable ease evaluation Philips family members being assembled ROSA (receiver optical sub-assembly). following describes GH404 usage. three devices, typical measurement results shown have been achieved with ROSAs assembled OECA (http://www.oeca.de/).The measurement set-up described, schematics GH404 component placement layer given.
Connecting GH404 board
GH404 application board contains connectors providing access relevant signals, available ROSA pins.The application board shown Figure
Figure GH404 board connectors
Table gives brief description signals GH404 connectors. Table GH404 connectors
Connector name Supply, Supply ground Out, OutQ NWA_Force, NWA_Sense ROSA Description Power supply ROSA (3.3V) Differential ROSA signal output Power Supply Rejection Ratio measurement connectors Photo Detector Monitor voltage Receiver Optical Sub-Assembly containing TZA3026/36/46 TIA. picture shows ROSA without receptacle
Philips Manual Edition Appendix
ROSA 2.3.1 Connection
ROSA either directly connected board shown Figure part receptacle shown Figure both cases pinning ROSA should according Figure
receptacle
ROSA
outQ
GH404
bra724
Figure ROSA connection
2.3.2 Construction
measured optical assemblies have been constructed OECA (http://www.oeca.de/). construction assembly incorporating TZA3026 seen Figure
Figure ROSA internal construction
Philips Manual Edition Appendix
2.3.3 Design hints
sensitivity optical receiver mostly determined total amount noise present input TIA.This total noise comprises noise itself, externally added noise.The noise TZA30x6 fixed design, datasheets specify value total integrated noise over bandwidth: In(tot)(rms). contrast, external noise contribution influenced construction optical assembly. ROSA must properly designed minimize noise achieve good sensitivity. Basically, noise adding mechanisms exist (see Figure
noise power supply
CVCC IDREF IMON
IDREF RDREF
IDREF_MON
TZA3036
BIASING
RIDREF_MON
DREF
DPHOTO
CDREF
GAIN CONTROL
PEAK DETECTOR
output buffers
noise input
IPHOTO
OUTQ
noise amplifier
single-ended differential converter
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Figure Noise adding mechanisms
First, noise coupled directly input hence amplified along with desired signal. Second, noise added power supply thus superimposed onto amplifying chain. achieve good immunity against these external noise contributions, bear mind following hints when designing ROSA (please also refer Figure Figure 6).The examples also show some options constructing ROSA (e.g. using either type die-type capacitors, using laminates carry capacitors photodiode). Basically, design ROSA simplified symmetrical port layout TIAs.With exception IPHOTO/pin layout makes each port available least twice.
Philips Manual Edition Appendix
OUTQ
TZA3046U OUTQ
TZA3046U
supply-ground loop
TIA-input-ground loop
bra726
Figure Data sheet application recommendations
OUTQ
IDREF
bra727
Figure ROSA layout using TZA30x6 laminate
Layout design hints:
Minimize coupling input: Place photodiode close possible minimize length bond-wires (DREF) (IPHOTO) that connect photodiode respectively coupling bond-wire bond-wire which connects capacitor CVCC supply VCC, should also minimized bond-wires differential output, B10, should kept short possible placed orthogonally bond-wire input, Optimize power de-coupling network: Place de-coupling capacitor, CVCC, between connection ROSA create L-C-L network Minimize length respective interconnecting bond-wires, Provide proper grounding: Provide good common grounding, e.g. plate ground pads (pins connect using short bond-wires, common ground plane place ground bond-wires, B6.B9, parallel bond-wires output, Avoid common impedances ground, e.g. connect CVCC CDREF separately ground Minimize area thus radiation/coupling following loops: Input: CDREF GNDTIA DPHOTO CDREF Supply: CVCC GNDTIA 4/17 CVCC
Philips Manual Edition Appendix
2.4. Measurements
following chapters give measurement results from TZA3026,TZA3036 TZA3046 ROSA GH404 application board. These results have been obtained using set-ups given paragraph 4.4.
2.4.1 Measurement results TZA3026
10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 measured, PBRS31-1
(dBm)
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Figure TZA3026 measurement results
Philips Manual Edition Appendix
2.4.2 Measurement results TZA3036
10-4 10-5 10-6 10-7 10-8 10-9 10-10 PBRS7-1
(dBm)
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Figure TZA3036 measurement results
Philips Manual Edition Appendix
2.4.3 Measurement results TZA3046
10-4 10-5 10-6 PRBS23-1 10-7 10-8 10-9 10-10 10-11 PRBS7-1
(dBm)
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Figure TZA3046 measurement results
Philips Manual Edition Appendix
2.4.4 Measurement set-ups
General Conditions
Supply voltage [VCC] Temperature Data rate
value
3.3V Mbps (TZA3026), Mbps (TZA3036), 1250 Mbps (TZA3046)
Table Measurement conditions
data agilent error performance analyser 8613A
data
tektronix data communication signal analyser CSA8000
agilent lightwave transmitter 83433A (1550
data
optical
agilent optical optical attenuator optical
monitor
optical
agilent lightwave multimeter
RDSA
GH404
OUTQ agent filters
LIMITING AMPLIFIER
bra731
Error Rate measurement
Attenuator Monitor/Main ratio calibrated TZA3036 measurements, 2014 2015 capacitors were replaced versions Bandwidth determined pass filters from Agilent: TZA3026 Type 87441B Mbit/s TZA3036 Type 87441A Mbit/s TZA3046 filter used, bandwidth load capacitor
patterns
data agilent error performance analyser 8613A
data
agilent lightwave transmitter 83433A (1550
data
optical
agilent optical optical attenuator optical
monitor
data
tektronix communication signal analyser CSA8000
RDSA
GH404
OUTQ
bra732
Philips Manual Edition Appendix
Appendix 2.5.1 Schematics
figures this section show schematic GH404 application board. Figure shows connection ROSA GH404 application board.
1010 142-0701-851
1002
2015
1006
OUTQ 1008
2014
1003 142-0701-851 OUTQ
ROSA SEEN FROM 1009 1012
1005
3002
type
bra733
Figure ROSA connection
Power Supply Rejection Ratio (PSRR) measurements, small circuit added introduce interference component supply TIA.The circuit shown Figure
NWA_FORCE 1004
3003 2013
3004
NWA_FORCE 1011
3006 3008 3007 bra734
Figure PSRR measurement circuit
Philips Manual Edition Appendix
power supply circuit shown Figure 12.This circuit contains reverse polarity protection diode zener diode over-voltage protection when used with current limited power supply.
1001
5002 BLM18PG300
1007 BLACK
2016
6002 BYV10-40
6001 BZX79-C3V6
2018
2019
bra735
Figure Power supply circuit
2.5.2 Component placement
1011 1005
1006 1002 1008
6001
3006 3007
5002
3008 2013 3004 3003
2019
2015
3002
1001
2016 1007
2015
1004
1010
1003
bra736
Figure Layout component placement side
2014
6002
Philips Manual Edition Appendix
Disclaimers
Life support These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance.When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys license title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification.
Licenses
Purchase Philips components
Purchase Philips components conveys license under Philips' patent components system provided system conforms specification defined Philips.This specification ordered using code 9398 40011.
Purchase Philips components
Purchase Philips components conveys license under Philips patent components system products conforming standard UATM-5000 allocation remote control commands defined Philips.
Philips Manual Edition Appendix
Application-Basics
Frequency spectrum
Radio spectrum wavelengths
Each material's composition creates unique pattern radiation emitted.This classified "frequency" "wavelength" emitted radiation. electro-magnetic (EM) signals travel with speed light, they have character propagation waves.
Gamma radiation
750nm 400nm
380nm 100nm
104eV
106eV
1015eV
100MHz
100GHz
100kHz
10MHz
10GHz
10kHz
1MHz
1GHz
Ionized radiation
750nm Colour scale visible light human
400nm
survey frequency bands related wavelengths:
Band Frequency 3kHz 30kHz 30kHz 300kHz 300kHz 1650kHz 1605KHz 4000KHz 3MHz 30MHz 30MHz 300MHz 300MHz 3GHz 3GHz 30GHz 30GHz 300GHz 300GHz 3THz Definition Very Frequency Frequency Medium Frequency Boundary Wave High Frequency Very High Frequency Ultra High Frequency Super High Frequency Extremely High Frequency Wavelength acc. DIN40015 100km 10km 10km 100m 100m 10cm 10cm 1mm-100µm CCIR Band
Cosmic radiation
Visible light
Ultra violet
Infrared
X-ray
Philips Manual Edition Appendix
Literature researches according Microwave's sub-bands showed different definitions with very none description area validity. following table will give overview can't reference.
Source Validity IEEE Radar Standard Military Band www.werweiss www.atcnea.de Siemens Siemens ARRL Wikipedia -was.de Online Lexicon Online Lexicon Book 3126 Satellite Primary Frequency Microwave Dividing Uplink Radar bands bands Radar Area techniques 0,225 3,95 3,95
Band
5,85 18,0 26,5
26,5 26,5 12,6
10,9 15,3 17,2 0,39 1,55
26.5 26.5 12.4
5,85 26,5 26,5 12,4
12,4 18,0 26,5 40,0 3,95 40,0 60,0
0,225 0,39 1,55
12.4
0,22 3,95 12,4
12,4
12,5
10,9
Function antenna
standard application output signal transmitter power amplifier transported coaxial cable suitable location where antenna installed. Typically coaxial cable impedance TV/Radio). ether, that room between antenna infinite space, also impedance value. This ether transport medium traveling wireless waves from transmitter antenna receiver antenna. optimum power transfer from coaxial cable (e.g. into ether (theoretical Z=120 =377), need "power matching" unit. This matching unit antenna. does match cable's impedance space's impedance. Depending frequency specific application needs there antenna configurations construction variations available.The simplest isotropic ball radiator, which theoretical model used mathematical reference. next simplest configuration practical antenna wide dipole, also called dipole radiator. consists axial arranged sticks (Radiator). Removal Radiator results "vertical monopole" antenna, illustrated adjacent picture. vertical monopole "donut-shaped" field centered radiating element.
Philips Manual Edition Appendix
Higher levels circuitry integration cost reductions also influence antenna design. Based field radiation strip-lines made printed circuit boards (PCBs), antenna structures were developed called `patch-antennas' (see diagram). ceramic instead epoxy dielectric shrinks mechanical dimensions.
Patch
bra434
LF-MF-HF application range, ferrite-rod antennas were commonly used.They compress magnetic fields into ferrite core, which acts like amplifier magnetic fields. Coils pick signals like transformer.They part pre-selection tank image rejection channel selection.The tuner shown part Nordmende Elektra vacuum-tube radio least years still working).To illustrate dimensions, Monolithic Microwave placed front solder point.
ECC85 BGA2003
Tuning capacitor
BGA2003
Ferrite Antenna
Logarithmic periodic antenna 406-512
broadband discone antenna
Philips Manual Edition Appendix
Arecibo observatory, Puerto Rico, radio telescope with dish antenna diameter deep.The secondary reflector receiver located 900-ton platform, suspended above dish.This feed point L-band microwave antenna antennas used SETI@home project.The receiver cooled down using liquid Helium low-noise operation, receive weak, distant signals transmitted (potentially) extraterrestrial intelligence. observatory respond incoming signals using transmitter with balanced klystron amplifier (2.5 output peak power; power supply).
Feed
Dish
Arecibo observatory, Puerto Rico
Transistor semiconductor process
3.3.1 General-purpose small-signal bipolar
transistor built from three different layers: Highly-doped emitter layer Medium-doped base area Low-doped collector area. highly doped substrate serves carrier conductor only. During assembly process, transistor attached lead-frame gluing eutectic soldering.The emitter base contacts connected lead-frame (leads) through bond wires (e.g. gold, aluminum, using, example, ultrasonic welding process.
Substrate: Collector Emitter nBase
Epitaxial-Layer:
bra437
Transistor cross section
bra438
bra439
BC337, BC817
SOT23 standard lead-frame
Philips Manual Edition Appendix
3.3.2 Double polysilicon
mobile communications market ever-higher frequencies mean there demand low-voltage/highperformance wideband transistors, amplifier modules MMICs. meet that demand, Philips developed double-polysilicon process achieve excellent performance.The `double-poly' diffusion process uses advanced transistor technology that vastly superior existing bipolar technologies.
base emitter base
oxide epilayer substrate
Advantages double-poly-Si process:
Higher frequencies (>23GHz) Higher power gain Gmax, e.g., 22dB/2GHz Lower noise operation Higher reverse isolation Simpler matching Lower current consumption Optimized supply voltages High efficiency High linearity Better heat dissipation Higher integration MMICs (SSI= Small-Scale-Integration)
collector
bra440
Existing advanced bipolar transistor
base
emitter poly poly
base
collector
oxide buried layer substrate SIC: selectively implanted collector
bra441
Applications
Cellular cordless markets, low-noise amplifiers, mixers power amplifier circuits operating higher), high-performance front-ends, pagers satellite tuners.
Typical products manufactured double-poly-Si:
MMIC Family: generation wideband transistors: BGA20xy, BGA27xy BFG403W/410W/ 425W/480W
With double-poly, polysilicon layer used diffuse connect emitter while another polysilicon layer used contact base region. buried layer, collector brought die. with standard transistors, collector contacted back substrate attached lead-frame.
Philips Manual Edition Appendix
design basics
fundamentals
4.1.1 waves
electromagnetic (EM) signals travel outward like waves pond that stone dropped into it.The waves governed laws that particularly apply optical signals. homogeneous vacuum, without external influences, waves travel speed Co=299792458 m/s. Waves traveling substrates, wires, within non-air dielectric material into traveling path slow down their speed proportional root dielectric constant:
reff
reff substrate's dielectric constant.
With calculate wavelength,
Example1:
Calculate speed electromagnetic wave Printed Circuit Board (PCB) manufactured using epoxy material metal-dielectric-semiconductor capacitor integrated circuit. metal-dielectric-semiconductor capacitor, dielectric material Silicon-Dioxide (SiO2) Silicon-Nitride (Si3N4).
Calculation:
reff
299792458m 139.78
reff reff reff
SiO2 Si3N4
Example2:
What wavelength transmitted from commercial radio broadcasting program (SWR3 meter band) 6030 air, within PCB?
Calculation:
reff close vacuum.
reff
Wavelength air:
299792458m/s 49.72m 6030
From Example take dielectric constant reff 4.6, then calculate wavelength 23.18 meters
Philips Manual Edition Appendix
forward-traveling wave transmitted injected) source into traveling medium (whether ether, substrate, dielectric, wire, microstrip, waveguide other medium) travels load opposite medium. junctions between different dielectric materials, part forwardtraveling wave reflected back towards source.The remaining part continues traveling towards load.
Backwards traveling wave
Forwards traveling wave Junction LOSSY Source LOSSY Load LOSSY Junction Junction Junction
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Fig.6: Multiple reflections between lines with different impedances Z1-Z3
Fig.6, reflections forward-traveling main wave (red) caused between materials with different impedance values (Z1, Z3). shown, backward-reflected wave (green) again reflected into forward-traveling wave direction towards load (shown violet Fig.6). case optimum matching between different dielectric mediums, signal reflection will occur maximum power forwarded.The amount reflection caused junctions lines with different impedances, line discontinuities, determined reflection coefficient.This explained next chapter.
Wavelength
bra443
[µm]
[mm]
Example: Select your frequency (ISM433) crossing trace (blue) read wavelength (70cm)
Philips Manual Edition Appendix
4.1.2 reflection coefficient
discussed previously, forward-traveling wave partially reflected back junctions with line impedance discontinuities, mismatches. Only portion forward traveling wave (arriving load) will absorbed processed load. Because frequency-dependent speed propagating waves dielectric medium, there will delay arrival wave load point over what wave traveling free space would have (phase shift). Mathematically this behavior modeled with vector complex Gaussian space. each location travel medium wire), wave-fronts with different amplitude phase delay heterodyned.The resulting energy envelope waves along wire appears ripple with maximum minimum values.The phase difference between maximums same value phase difference between minimums.This distance termed half-wavelength, (also termed normalized phase shift 180°). Example: line with mismatched ends driven from source will have standing waves.These will result minimum maximum signal amplitudes defined locations along line. Determine approximate distance between worst-case voltage points Bluetooth signal processed printed circuit based substrate. Assumed speed FR4:
Calculation:
Wavelength: minimum have minimum voltage, maximum current. maximum have maximum voltage, minimum current. distance between minimum maximum voltage current) point equal reflection coefficient defined ratio between backward-traveling voltage wave forward-traveling voltage wave:
Reflection coefficient:
Reflection loss return loss:
index `(x)' indicates different reflection coefficients along line.This caused distribution standing wave along line. return loss indicates much wave reflected, compared forward-traveling wave. Often input reflection performance device specified Voltage Standing Wave Ratio (VSWR just SWR).
VSWR:
Matching factor:
Some typical values VSWR: 100% mismatch caused open shorted line: VSWR Optimum (theoretical) matched line: VSWR practical situations varies between VSWR
Philips Manual Edition Appendix
Calculating reflection factor:
Using some mathematical manipulation:
results
Reflection coefficients certain impedances (e.g. load) leads with nominal system impedance (50, 75). explained, standing waves cause different amplitudes voltage current along wire. ratio these parameters impedance each location, (x). This means line with length (L),
mismatched load wire-end location (x=L), will show wire-length dependent impedance source location (x=0):
Example:
There several special cases (tricks) that used microwave designs. Mathematically shown that wire with length wavelength transformer: impedance will quarter
impedance transformer:
This used SPDT (single pole, double throw) based diode switches bias circuits because short (like large capacitor) transformed into infinite impedance with resistive path (under ideal conditions). indicated Fig.6, shown traveling-wave basic rules, matching, reflection individual wire performances affect bench measurement results caused impedance transformation along wire. this constraint, each measurement set-up must calibrated precision references. Examples calibration references are: Open Through Short Sliding Load -Match set-up calibration tools undo unintended wire transformations, discontinuities from connectors, similar measurement intrusion issues.This prevents Device Under Test (DUT) measurement parameters from being affected mechanical bench set-up configurations.
Philips Manual Edition Appendix
Example:
Calculation:
Determine input VSWR BGA2711 MMIC wideband amplifier 2GHz, based data sheet characteristics. What kind resistive impedance(s) theoretically cause this VSWR? What input return loss measured coaxial cable distance BGA2711 GHz: 10dB
Comparison:
know only magnitude it's angle. definition, VSWR must larger than then possible solutions: Zmax=1.92*50=96.25; Zmin=50/1.92=25.97
then examine transformer transforms device impedance ZIN1=96.25 Results: ZIN2=25.97 96.25
2GHz, BGA2711 offers input return loss 10dB VSWR=1.92. This reflection caused 96.25 25.97 impedance. course there infinite results possible takes into account combinations values. Measuring this impedance 2GHz with non-50 cable will cause extremely large errors distance, because Zin1 96.25 appears 25.97 second solution Zin2=25.97 appears 96.25!
illustrated above example, VSWR return loss) quickly indicates quality device's input matching without calculations, does tell about real (vector) performance (missing phase information). Detailed mathematical network analysis amplifiers depends device's input impedance versus output load (S12 issue).The output device impedance dependent impedance source driving amplifier (S21 issue). this interdependence, s-parameters linear small signal networks offers reliable accurate results.This s-parameter theory will presented next chapters.
Philips Manual Edition Appendix
VSWR
Reflection Coefficient Zmin, Zmax [Ohm]
Return Loss [dB]
Example: Select your interesting return-loss (10dB). Crossing dark green trace find VSWR (1,9) crossing dark blue trace find reflection coefficient (r0,32).There (100% resistive) mismatches found either crossing dashed light green traces (Zmax96) crossing dashed light blue trace (Zmin26). further details, please refer former algebraic application example.
Philips Manual Edition Appendix
4.1.3 Differences between ideal practical passive devices
Practical devices have so-called parasitic elements very high frequencies. Resistor Inductor Capacitor inductive parasitic action acts like low-pass filtering function. capacitive resistive parasitic, causing like damped parallel resonant tank circuit with certain self resonance. inductive resistive parasitic, causing like damped tank circuit with Series Resonance Frequency (SRF).
inductor's capacitor's parasitic reactance causes self-resonances.
resistor model
capacitor model
inductor model
Fig.7 Equivalent models passive lumped elements
passive component above possible, must critically evaluated. capacitor above appears inductor with blocking capabilities.
Philips Manual Edition Appendix
4.1.4 Smith chart
indicated example previous chapter, impedances semiconductors combination resistive reactive parts caused phase delays parasitics. impedances best analyzed frequency domain under vector algebraic expressions:
Object
into
Frequency domain
Resistor
Inductor
Capacitor
Frequency
Complex designator
Some useful basic vector algebra analysis: Complex impedance:
(cos
Polar notation Cartesian (Rectangular) notation
with;
angle
same rules used other issues, e.g., complex reflection coefficient:
Philips Manual Edition Appendix
Special cases:
Resistive mismatch: Inductive mismatch: Capacitive mismatch: reflection coefficient: reflection coefficient: reflection coefficient:
Gaussian number area (Polar Diagram) allows charting rectangular two-dimensional vectors:
Dots Dots Dots Dots
Re-Line 100% resistive Im-Line 100% reactive some their above Re-Line inductive resistive some their below Re-Line capacity resistive
resistive-axis
Resistive-Axis
reactive-axis
Resistive-Axis
applications, designers remain close resistive impedance.The polar diagram's origin circuits, relatively large impedances occur remain close special network design maximum power transfer. Practically, very very high impedances don't need known accurately.The Polar diagram can't show simultaneous large impedances region with acceptable accuracy, because limited paper size.
355.9
Using this fact Phillip Smith, engineer Bell Laboratories, developed so-called Smith Chart 1930s.The chart's origin Left right resistive values along real axis ?.The imaginary reactive axis (imaginary axis, ImAxis) ends 100% reactive High resolution provided close origin. away chart's centre resolution drops. Further from centre chart, resolution error increases.The standard Smith Chart only displays positive resistances unit radius (r=1). Negative resistances generated instability (e.g. oscillation) outside unit circle. this non-linear scaled diagram, infinite Re-Axis `theoretically' bent zero point Smith Chart. Mathematically shown that this will form Smith Chart's unit circle (r=1). dots lying this circle represent reflection coefficient magnitude (100% mismatch). positive combination with resistor will mathematically represented polar notation reflection coefficient inside Smith Chart's unity circle. Because Smith Chart transformed linear-scale polar diagram, 100% polar diagram rules. Cartesiandiagram rules changed non-linear scaling.
Start
Stop 1000
Philips Manual Edition Appendix
Special cases:
Dots below horizontal axis represent impedance with capacitive part Dots laying horizontal axis (ordinate) 100% resistive Dots laying vertical axis (abscissa) 100% reactive
180° 360°
L-Area
135° L-Area Scaling rule determine Magnitude (vector distance) reflection coefficient
180°
-135° C-Area -90°
-45°
Fig.8: BGA2003 output Smith chart (S22)
special cases zero infinitely large impedance illustrated (above).The upper half circle inductive region.The lower half circle capacitive region.The origin system reference (ZO).To more flexible, numbers printed chart normalized Normalizing impedance procedure: System reference impedance (e.g.,
Example: Calculation: Result:
Plot resistor into upper BGA2003's output Smith chart. Znorm1=100/50=2; Znorm2=25/50=0.5 resistor appears horizontal axis location resistor appears horizontal axis location following three circuits, capacitors inductors specified amount reactance their 100MHz design frequency. Determine value parts. Plot their impedance BFG425W's output (S22) Smith chart.
Example1:
Philips Manual Edition Appendix
Circuit:
Result:
case
135° Case
Case 180°
case
case
Case
-135°
-45°
-90°
Calculation:
Case (constant resistance) From circuit
39.8nH
Z(A)norm ZA/50 j0.5 Drawing into Smith chart
Case (constant resistance variable reactance variable capacitor) From circuit Z(B)norm=ZB/50=0.5-j(0.2 0.5) Drawing into Smith chart Case (constant resistance variable reactance variable inductor) From circuit Z(C)norm=ZC/50=(0.5 1)+j0.5 Drawing into Smith chart
Example2:
Determine BFG425W's outputs reflection coefficient (S22) 3GHz from data sheet. Determine output return loss output impedance. Compensate reactive part impedance.
Philips Manual Edition Appendix
Calculation:
data Smith chart read with improved resolution using vector reflection coefficient Polar notation. Mechanically measure scalar length from chart origin 3GHz (vector distance). chart's right side printed ruler with numbers Read from equivalent scaled scalar length 0.34 Measure angle -50°.Write reflection coefficient vector polar notation
Procedure:
Normalized impedance:
-45°
Because transistor characterized bench test set-up Impedance:
-90°
output BFG425W equivalent circuit 65.2 with 1.38pF series capacitance. Output return loss, compensated: RLOUT= -20log(|r|)=9.36dB resulting VSWROUT=2 compensation reactive part impedance, take conjugate complex reactance: Xcon=-Im{Z} -{-j38.4} +j38.4 resulting
series inductor will compensate capacitive reactance.The input reflection coefficient calculated
Output return loss, compensated: RLOUT= -20log(0.132)=17.6dB resulting VSWROUT=1.3 Please note: practical situations output impedance function input circuit.The input output matching circuits defined stability requirements, need gain noisematching. Investigation done using network analysis based s-parameters.
Philips Manual Edition Appendix
Small signal amplifier parameters
4.2.1 Transistor parameters, microwave
currents voltages, assume transistor acts like voltage-controlled current source with diode clamping action base-emitter input circuit. this model, transistor specified large-signal DC-parameters, i.e., DC-current gain hfe), maximum power dissipation, breakdown voltages forth.
Thermal Voltage:VT=kT/q26mV@25°C Collector reverse saturation current frequency voltage gain Current gain
Increasing frequency audio frequency range, transistor's parameters change frequency-dependent phase shift parasitic capacitance effects. characterization these effects, small signal h-parameters used.These hybrid parameters determined measuring voltage current terminal using open short (standards) other port. h-parameter matrix shown below.
h-parameter Matrix:
Increasing frequency ranges, open ports become inaccurate electrically stray field radiation.This results unacceptable errors. this phenomenon, y-parameters were developed.They again measure voltage current, only `short' standard.This `short' approach yields more accurate results this frequency region. y-parameter matrix shown below.
y-parameter Matrix:
Further increasing frequency, parasitic inductance `short' causes problems mechanical-dependent parasitics. Additionally, measuring voltage, current phase quite tricky.The scattering parameters, s-parameters, were developed based measurement forward backward traveling waves determine reflection coefficients transistor's terminals ports).The s-parameter matrix shown below.
s-parameter Matrix:
Philips Manual Edition Appendix
4.2.2 Definition s-parameters
Every amplifier input port output port 2-port network).Typically input port labeled Port-1 output labeled Port-2.
port port
Matrix:
Equation:
Fig.10: Two-port network's waves
forward-traveling waves traveling into DUT's (input output) ports. backward-traveling waves reflected back from DUT's ports expression `port terminate' means This conjugate complex power match! previous chapter reflection coefficient defined
Reflection coefficient:
Calculating input reflection factor port
with output terminated
That means source injects forward-traveling wave (a1) into Port-1. forward-traveling power (a2) injected into Port-2.The same procedure done Port-2 with
Output reflection factor:
with input terminated
Gain defined
forward-traveling wave gain calculated wave (b2) traveling Port-2 divided wave (a1) injected into Port-1.
backward traveling wave gain calculated wave (b1) traveling Port-1 divided wave (a2) injected into Port-2. Forward transmission:
normalized waves defined signal into Port-1 signal into Port-2
Isolation:
Input return loss:
Output return loss: signal Port-1 Insertion loss: signal Port-2
Philips Manual Edition Appendix
normalized waves have units referenced system impedance shown following mathematical analyses: relationship between written
Rem:
ubstituting:
Volt Unit Watt
Because
normalized waves determined measuring voltage forward-traveling wave referenced Directional couplers VSWR bridges divide standing waves into forward-
system impedance constant
backward-traveling voltage wave. (Diode) Detectors convert these waves Vforward Vbackward voltage. After easy processing both voltages, VSWR read. VHF-SWR-meter built from (Nuova Elettronica). consists three strip-lines.The middle line passes main signal from input output. upper lower strip-lines select part forward backward traveling waves special electrical magnetic cross-coupling. Diode detectors each coupled strip-line-end rectify power voltage, which passed external analog circuit processing monitoring VSWR. Applications include: power antenna match control, output power detector, vector voltmeter, vector network analysis, AGC, etc.These kinds circuit kits discussed amateur radio literature several magazines.
Vforward
Detector
Vbackward
4.2.2.1
2-Port Network definition
forward
Input return loss
Port-1 backward
Port-2
Output return loss
Fig.11: S-parameters two-port network
Forward transmission loss (insertion loss)
Philips' data sheet parameter Insertion power gain Reverse transmission loss (isolation)
Philips Manual Edition Appendix
Example: Calculation:
Calculate insertion power gain BGA2003 100MHz, 450MHz, 1800MHz, 2400MHz bias set-up VVS-OUT=2.5V, IVS-OUT=10mA. Download s-parameter data file [2_510A3.S2P] from Philips website page Silicon MMIC amplifier BGA2003.
This section file:
Freq
1800 2400
0.58765 0.43912 0.39966 0.21647 0.18255
-9.43 -28.73 -32.38 -47.97 -69.08
21.85015 16.09626 14.27094 4.96451 3.89514
163.96 130.48 123.44 85.877 76.801
0.00555 0.019843 0.023928 0.07832 0.11188
83.961 79.704 79.598 82.488 80.224
0.9525 0.80026 0.75616 0.52249 0.48091
-7.204 -22.43 -25.24 -46.31
Results:
100MHz 450MHz 1800MHz 2400MHz
20?log(21.85015) 26.8
20?log(4.96451) 13.9 20?log(3.89514) 11.8
4.2.2.2
3-Port Network definition
Typical products 3-port s-parameters are: directional couplers, power splitters, combiners, phase splitters. 3-Port s-parameter definition:
port1 port3
port2
Port reflection coefficient return loss: Port Port Port
Fig.12: Three-port networks waves
Transmission gain: Port 1=>2 Port 1=>3 Port 2=>3 Port 2=>1 Port 3=>1 Port 3=>2
Philips Manual Edition Appendix
amplifier design fundamentals
4.3.1 bias point adjustment MMICs
S-parameters dependent bias point frequency, shown previous chapter. Consequently, s-parameter files include bias-setting data. It's recommended this setup because s-parameter will valid different bias point. example bias-circuit design illustrated with BGU2003 Vs=2.5V; Is=10mA.The supply voltage chosen VCC=3V.
Ctrl CTRL
+VCC CONTROL
Vp-Out
V/10 Vs+OUT
BGA2003 equivalent circuit: main transistor. forms current mirror with Q5.The input current this current mirror determined current into Ctrl.pin. limits current when control voltage applied directly Ctrl input. decouple bias circuit from input signal. Because located same die, Q5's bias point very temperature-stable.
bias setup
ICTRL (mA)
From BGA2003 datasheet, Figs were combined (see adjacent graph) better illustrate MMIC's relationship. line shows graphical construction starting with requirement IVS-OUT=10mA, automatically crossing ordinate ICTRL=1mA, finishing into abscissa VCTRL=1.2V
IVS-OUT (mA)
VCTRL
bias point adjustment transistors
4.3.2 bias point adjustment transistors
contrast easy bias setup MMICs, here design setup used, example, audio amplifiers.
Philips Manual Edition Appendix
bias setup with stabilization voltage feedback advantage this setup very highly resistive, resistor lowering input impedance terminal [IN] negated, IF-band filter less loaded. Because there emitter feedback resistor, high gain achieved from Q1.This needed narrow bandwidth, high-gain amplifiers.The disadvantage very stability operating point caused BE-diodes' relatively linear negative temperature coefficient ca.VBE -2.5mV/K into amplified This lowered adding extra resistor between ground emitter. emitter resistor disadvantage gain loss need bypassing capacitor. Additionally, transistor will loose quality performance (instability) will have emitter heat sinking into plane. medium output power, bias setup must stabilized increased junction temperature causing drifting.Without stabilization transistor will burn distortion rise. possible solution illustrated adjacent picture (BFG10). Comparable BGA2003, current mirror designed together with transistor T1.T1 works like diode with (VBE) drift close transistor (DUT) case close thermal coupling.With ,1=DUT VBE-1VBE-DUT very simplified algebraic analysis:
bias
C14, C15,
input
output
bra461
finalizing into very temperature-independent relation ship IC-DUT (Vbias-VBE)/R2 best current imaging, structure areas should have similar dimensions.
4.3.3 Gain definitions
gain amplifier specified several ways depending (theoretical) measurement implemented, stability conditions, matching (e.g. best power processing, max. gain, lowest noise figure certain stability performance). Often certain power gains calculated upper lower possible parameter extremes. Additionally calculating circles smith chart (power gain circles, stability circles) used select useful working range input output.The algebraic expressions used vary from literature source other. reality cannot neglected, causing output being function required source input being function required load.This makes matching complicated part design procedure.
Transducer power gain:
This includes effect matching device gain doesn't take into account losses components.
Power gain operating power gain:
Used case non-negligible S12, independent source impedance.
Available power gain:
independent load impedance.
Philips Manual Edition Appendix
Maximum available gain (MAG):
could ever hope from transistor under simultaneous conjugated match with Rollett stability factor K>1. calculated from s-parameters several steps. frequency unconditional stability, (GT,max=GP,max=GA,max) plotted transistor data sheets.
Maximum stable gain:
figure merit potentially unstable transistor valid (subset MAG). frequency potential instability, plotted transistor data sheets. Further examples used definitions design amplifiers: GT,max Maximum transducer power gain under simultaneous conjugated match conditions GT,min Minimum transducer power gain under simultaneous conjugated match conditions Unilateral transducer power gain GP,min Minimum operating power gain potential unstable devices Unilateral figure merit determine error caused assuming S12=0.
adjacent example shows BGU2003's gain function frequency frequency range MMIC potentially unstable. Above MMIC unconditionally stable (within range measurement) maximum unilateral transducer power gain assuming S12=0 conjugated match: S12=0 (=unilateral figure merit) specify unilateral 2-port network resulting K=infinite DS=S11*S22
gain (dB)
bra462
Gmax
(MHz)
further details please refer books e.g. Pozar, Gonzalez, Bowick, etc.
4.3.4 Amplifier stability
variables must processed with complex data.The evaluated Kfactor only valid frequency bias setup selected s-parameter quartet [S11, S12, S21, S22]
Determinant:
Rollett stability factor:
Philips Manual Edition Appendix
some literature sources, size isn't take into account dividing into following stability qualities. |Ds|<1 Unconditionally stable combination source load impedance Potentially unstable will most likely oscillate with certain combinations source load impedance. does mean that transistor will useable application. means transistor more tricky use. simultaneous conjugated match isn't possible. -1<K<0 Used oscillator designs |Ds|>1 This potentially unstable transistors with need SWR(IN)=SWR(OUT)=1 manufactured have gain GT,min.
References Application Basics Design Basics
Philips Semiconductors, Wideband Transistors MMICs, Data Handbook SC14 2000, S-parameter Definitions, page Philips Semiconductors, Datasheet, 1998 Product Specification, BFG425W, 25GHz wideband transistor Philips Semiconductors, Datasheet, 1999 Product Specification, BGA2003, Silicon MMIC amplifier Philips Semiconductors, Datasheet, 2000 Product Specification, BGA2022, MMIC mixer Philips Semiconductors, Datasheet, 2001 Product Specification, BGA2711, MMIC wideband amplifier Philips Semiconductors, Datasheet, 1995 Product Specification, BFG10; BFG10/X, 2GHz power transistor Philips Semiconductors, Datasheet, 2002 Product Specification, BGU2703, SiGe MMIC amplifier Philips Semiconductors, Discrete Semiconductors, FACT SHEET NIJ004, Double Polysilicon technology behind silicon MMICs, transistors modules Philips Semiconductors, Hamburg, Germany,T. Bluhm, Application Note, Breakthrough Small Signal VCEsat (BISS) Transistors their Applications, AN10116-02, 2002 H.R. Camenzind, Circuit Design Integrated Electronics, page34, 1968, Addison-Wesley, Prof. Dr.-Ing. Schmitt,Telekom Fachhochschule Dieburg, Hochfrequenztechnik Bowick, Circuit Design, page 10-15, 1982, Newnes page 25-30, 1986, Franzis-Verlag U.Tietze, Schenk, Halbleiter-Schaltungstechnik, page 1993, Springer-Verlag Bauanleitungs-Handbuch, Band1, page 281-284, 1981, ING.W. HOFACKER MicroSim Corporation, MicroSim Schematics Evaluation Version 8.0, PSpice, July 1998 Karl Hille, DL1VU, Dipol Theorie Praxis, Funkamateur-Bibliothek, 1995 PUFF, Computer Aided Design Microwave Integrated Circuits, California Institute Technology, 1991 Martin Schulte, `Das Licht Astrophysik, 07.Feb. 2001, Astrophysik%20Teil%201%20.pdf http://www.k5rmg.org/bands.html SETI@home, Kathrein, Dipl. Ing. Peter Scholz, Mobilfunk-Antennentechnik.pdf, log.-per. Antenne K73232 Siemens Online Lexikon Werkbuch Elektronik,Teil Auflage, Franzis-Verlag, 1989 ARRL, American Radio Relay League
Philips Manual Edition Appendix
Philips Semiconductors Philips Semiconductors world's semiconductor suppliers, with manufacturing assembly sites sales organization that delivers countries. complete up-to-date list sales offices please visit website ©2005 Koninklijke Philips Electronics N.V. rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. date release: November 2005 document order number: 9397 15371

date release: November 2005 document order number: 9397 15371 The

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