M3D302 PBSS4240DPN VCEsat NPN/PNP transistor Product data sh

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M3D302
PBSS4240DPN VCEsat NPN/PNP transistor
Product data sheet 2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
FEATURES collector-emitter saturation voltage VCEsat High collector current capability High collector current gain high High efficiency leading reduced heat generation Reduced printed-circuit board area requirements. APPLICATIONS Power management: Complementary MOSFET driver Dual supply line switching. Peripheral driver: Half full bridge motor drivers Multi-phase stepper motor driver. DESCRIPTION NPN/PNP VCEsat transistor pair SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE PINNING emitter base collector VCEO ICRP RCEsat emitter-collector voltage QUICK REFERENCE DATA
PBSS4240DPN
MAX. SYMBOL PARAMETER 1.35 -1.1 UNIT
collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance
DESCRIPTION TR1; TR1; TR1;
view
MAM445
Fig.1
Simplified outline SOT457 (SC-74) symbol.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS note single peak Tamb note Tamb note Tamb note Tstg Tamb device Ptot Notes total power dissipation Tamb note storage temperature junction temperature operating ambient temperature
PBSS4240DPN
MIN.
MAX.
UNIT
transistor unless otherwise specified; transistor with negative polarity VCBO VCEO VEBO collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) ICRP Ptot repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation open emitter open base open collector 1.35 -1.1 +150 +150
Operated under pulsed conditions: duty cycle 20%; pulse width mounting collector standard footprint. Device mounted printed-circuit board; single-sided copper; tinplated; mounting collector cm2. Device mounted printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL transistor thermal resistance from junction ambient free air; note free air; note PARAMETER CONDITIONS VALUE UNIT
Notes Device mounted printed-circuit board, single-sided copper, tinplated, mounting collector cm2. Operated under pulsed conditions: pulse width duty cycle 0.20; mounting collector standard footprint.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN.
PBSS4240DPN
TYP.
MAX.
UNIT
transistor unless otherwise specified; transistor with negative polarity ICBO ICEO IEBO (NPN) current gain note VCEsat collector-emitter saturation voltage note VBEsat VBEon RCEsat (PNP) current gain -100 -500 note VCEsat saturation voltage -100 -500 -100 -200 note VBEsat VBEon RCEsat Note Pulse test: 0.02. saturation voltage base-emitter turn-on voltage equivalent on-resistance -100 note -100 -180 -400 -120 -145 -260 -530 -1.1 base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain transition frequency collector capacitance
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4240DPN
MHC471
MHC472
10-1
(mA)
10-1
(mA)
(NPN); Tamb Tamb Tamb
(NPN); Tamb Tamb Tamb
Fig.2
current gain function collector current; typical values.
Fig.3
Base-emitter voltage function collector current; typical values.
handbook, halfpage VCEsat (mV)
MHC473
MHC474
VBEsat
10-1
(mA)
10-1
(mA)
(NPN); IC/IB Tamb Tamb Tamb
(NPN); IC/IB Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Base-emitter saturation voltage function collector current; typical values.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4240DPN
MHC475
handbook, halfpage RCEsat
MHC476
(10)
10-1 10-1
(mA)
(NPN); Tamb (10)
(NPN); IC/IB Tamb Tamb Tamb
Fig.7 Fig.6 Collector current function collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance function collector current; typical values.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4240DPN
1000
MHC464
-1.2
MHC465
-0.8
-0.4
-10-1
-102
-103 -104 (mA)
-10-1
-102
-103 -104 (mA)
(PNP); Tamb Tamb Tamb
(PNP); Tamb Tamb Tamb
Fig.8
current gain function collector current; typical values.
Fig.9
Base-emitter voltage function collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
MHC466
-1.2
MHC467
VBEsat
-0.8
-0.6
-0.4
-10-1
-102
-103 -104 (mA)
-0.2 -10-1
-102
-104 -103 (mA)
(PNP); IC/IB Tamb Tamb Tamb
(PNP); IC/IB Tamb Tamb Tamb
Fig.10 Collector-emitter saturation voltage function collector current; typical values.
Fig.11 Base-emitter saturation voltage function collector current; typical values.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4240DPN
-1.2 -0.8
MHC468
handbook, halfpage
-2.4
MHC469
-1.6 -1.2 -0.8 -0.4
-0.4
(10)
(10)
-0.4
-0.8
-1.2
-1.4
-0.4
-0.8
-1.2
-1.6
(PNP); Tamb -6.3 -5.6 -4.9 -4.2 -3.5 -2.8 -2.1 -1.4 (10) -0.7
(PNP); Tamb (10)
Fig.12 Collector current function collector-emitter voltage; typical values.
Fig.13 Collector current function collector-emitter voltage; typical values.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4240DPN
handbook, halfpage RCEsat
MHC470
10-1 -10-1
-102
-103 -104 (mA)
(PNP); IC/IB Tamb Tamb Tamb
Fig.14 Collector-emitter equivalent on-resistance function collector current; typical values.
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PACKAGE OUTLINE
PBSS4240DPN
Plastic surface mounted package; leads
SOT457
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.013 0.40 0.25 0.26 0.10 0.95 0.33 0.23
OUTLINE VERSION SOT457
REFERENCES JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2003
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS4240DPN
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2003
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/01/pp12 Date release: 2003 Document order number: 9397 10783

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