M3D302 PBSS4140DPN VCEsat NPN/PNP transistor Product data sh

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M3D302 PBSS4140DPN VCEsat NPN/PNP transistor Product data sh

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M3D302
PBSS4140DPN VCEsat NPN/PNP transistor
Product data sheet 2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
FEATURES total power dissipation collector-emitter saturation voltage High current capability Improved device reliability reduced heat generation Replaces SOT23 packaged VCEsat transistors same area Reduces required area Reduced pick place costs. APPLICATIONS General purpose switching muting backlighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras hand-held devices).
handbook, halfpage
PBSS4140DPN
QUICK REFERENCE DATA SYMBOL VCEO RCEsat PINNING emitter base collector DESCRIPTION TR1; TR1; TR1; PARAMETER collector-emitter voltage peak collector current peak collector current equivalent on-resistance MAX. <500 UNIT
DESCRIPTION
NPN/PNP VCEsat transistor pair SC-74 (SOT457) plastic package.
MAM445
MARKING TYPE NUMBER PBSS4140DPN MARKING CODE Fig.1
view
Simplified outline SC74 (SOT457) symbol.
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Tamb note Tamb note
PBSS4140DPN
MIN.
MAX.
UNIT
transistor; transistor with negative polarity VCBO VCEO VEBO Ptot Tstg Tamb device Ptot Note Device mounted printed-circuit board, single side copper, tinplated, mounting collector cm2. THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board, single side copper, tinplated, mounting collector cm2. PARAMETER thermal resistance from junction ambient CONDITIONS free air; note VALUE UNIT total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector +150 +150
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN.
PBSS4140DPN
TYP.
MAX.
UNIT
transistor unless otherwise specified; transistor with negative polarity ICBO ICEO IEBO VCEsat collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain collector-emitter saturation voltage transistor VBEsat VBEon RCEsat current gain base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance transition frequency collector capacitance note -100 -500 VBEsat VBEon RCEsat Note Pulse test: 0.02. base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance transition frequency collector capacitance -500 note <500
transistor current gain -1.1 -1.0 <500
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4140DPN
1000
MLD642
MLD635
10-1
(mA)
10-1 10-1
(mA)
(NPN); Tamb Tamb Tamb
(NPN); Tamb Tamb Tamb
Fig.2
current gain function collector current; typical values.
Fig.3
Base-emitter voltage function collector current; typical values.
handbook, halfpage VCEsat (mV)
MLD636
handbook, halfpage RCEsat
MHC126
(mA)
10-1 10-1
(mA)
(NPN); IC/IB Tamb Tamb Tamb
(NPN); IC/IB Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Equivalent on-resistance function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4140DPN
MLD637
(MHz)
1000 (mA)
(NPN);
Fig.6
Transition frequency function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4140DPN
1200
MLD638
MLD639
10-1
-102
-103
-104
(mA)
(PNP); Tamb Tamb Tamb
-10-1 -10-1
-102
-103 -104 (mA)
(PNP); Tamb Tamb Tamb
Fig.7
current gain function collector current; typical values.
Fig.8
Base-emitter voltage function collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
MLD640
handbook, halfpage RCEsat
MHC127
-102
-103
(mA)
-104
10-1 -10-1
-102
-103 -104 (mA)
(PNP); IC/IB Tamb Tamb Tamb
(PNP); IC/IB Tamb Tamb Tamb
Fig.9
Collector-emitter saturation voltage function collector current; typical values.
Fig.10 Equivalent on-resistance function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PBSS4140DPN
MLD641
(MHz)
-200
-400
-600
-800 (mA)
-1000
(PNP);
Fig.11 Transition frequency function collector current; typical values.
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
PACKAGE OUTLINE
PBSS4140DPN
Plastic surface mounted package; leads
SOT457
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.013 0.40 0.25 0.26 0.10 0.95 0.33 0.23
OUTLINE VERSION SOT457
REFERENCES JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2001
Semiconductors
Product data sheet
VCEsat NPN/PNP transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS4140DPN
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
2001
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors. changes were made content, except legal definitions disclaimers.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands 613514/01/pp11 Date release: 2001 Document order number: 9397 09062

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