MBD128 PBSS2515YPN VCE(sat) NPN/PNP transistor Product data

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MBD128 PBSS2515YPN VCE(sat) NPN/PNP transistor Product data

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MBD128
PBSS2515YPN VCE(sat) NPN/PNP transistor
Product data sheet Supersedes data 2002 2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
FEATURES collector-emitter saturation voltage High current capability Replaces SC-70 packaged VCEsat transistors same area Reduces required area Reduced pick place costs. APPLICATION General purpose switching muting frequency driver circuits backlighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras hand-held devices). DESCRIPTION NPN/PNP VCEsat transistor pair SC-88 plastic package. MARKING TYPE NUMBER PBSS2515YPN Note made Hong Kong made Malaysia made China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS2515YPN SC-88 DESCRIPTION plastic surface mounted package; leads MARKING CODE Fig.1
handbook, halfpage
PBSS2515YPN
QUICK REFERENCE DATA SYMBOL VCEO RCEsat PINNING emitter base collector DESCRIPTION TR1; TR1; TR1; PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. <500 UNIT
view
MAM445
Simplified outline SC-88 (SOT363) symbol.
VERSION SOT363
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Tamb Tamb note
PBSS2515YPN
MIN.
MAX.
UNIT
transistor; transistor with negative polarity VCBO VCEO VEBO Ptot Tstg Tamb device Ptot Note Transistor mounted printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note Transistor mounted printed-circuit board. PARAMETER thermal resistance from junction ambient CONDITIONS note VALUE UNIT total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector +150 +150
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN.
PBSS2515YPN
TYP.
MAX.
UNIT
transistor; transistor with negative polarity ICBO IEBO collector-base cut-off current emitter-base cut-off current current gain note note VCEsat collector-emitter saturation voltage note RCEsat VBEsat VBEon Note Pulse test: 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage note note note -100 <500
transistor transition frequency collector capacitance
transistor transition frequency collector capacitance
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
PBSS2515YPN
handbook, halfpage
MLD687
1200 1000
MLD689
(mV)
10-1
(mA)
10-1
(mA)
(NPN) Tamb Tamb Tamb
(NPN) Tamb Tamb Tamb
Fig.2
current gain function collector current; typical values.
Fig.3
Base-emitter voltage function collector current; typical values.
handbook, halfpage VCEsat (mV)
MLD691
1200
MLD690
VBEsat (mV)
1000
10-1
(mA)
10-1
(mA)
(NPN) IC/IB Tamb Tamb Tamb
(NPN) IC/IB Tamb Tamb Tamb
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
Fig.5
Base-emitter saturation voltage function collector current; typical values.
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
PBSS2515YPN
handbook, halfpage RCEsat
MLD692
1200
MLD688
(mA)
(10)
10-1 10-1
(mA)
(NPN) Tamb 4.14 3.68 3.22 2.76 1.84 1.38 0.92 (10) 0.46
(NPN) IC/IB Tamb Tamb Tamb
Fig.6
Equivalent on-resistance function collector current; typical values.
Fig.7
Collector current function collector-emitter voltage; typical values.
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD693
-1200 (mV) -1000
MLD695
-800
-600
-400
-10-1
-103 -102 (mA)
-200 -10-1
-102
-103 (mA)
(PNP) Tamb Tamb Tamb
(PNP) Tamb Tamb Tamb
Fig.8
current gain function collector current; typical values.
Fig.9
Base-emitter voltage function collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
MLD697
-1200
MLD696
VBEsat (mV)
-1000
-800
-600
-400
-10-1
-102
(mA)
-103
-200 -10-1
-102
-103 (mA)
(PNP) IC/IB Tamb Tamb Tamb
(PNP) IC/IB Tamb Tamb Tamb
Fig.10 Collector-emitter saturation voltage function collector current; typical values.
Fig.11 Base-emitter saturation voltage function collector current; typical values.
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
PBSS2515YPN
handbook, halfpage RCEsat
MLD698
-1200 (mA) -800
MLD694
-400
(10)
10-1 -10-1
-102
-103 (mA)
(PNP) Tamb -6.3 -5.6 -4.9 -4.2 -3.5 -2.8 -2.1 -1.4 (10) -0.7
(PNP) IC/IB Tamb Tamb Tamb
Fig.12 Equivalent on-resistance function collector current; typical values.
Fig.13 Collector current function collector-emitter voltage; typical values.
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
PACKAGE OUTLINE
Plastic surface-mounted package; leads
PBSS2515YPN
SOT363
index
detail
scale
DIMENSIONS original dimensions) UNIT 0.30 0.20 0.25 0.10 1.35 1.15 0.65 0.45 0.15 0.25 0.15
OUTLINE VERSION SOT363
REFERENCES JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 06-03-16
2005
Semiconductors
Product data sheet
VCE(sat) NPN/PNP transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS2515YPN
This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com. DISCLAIMERS General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions 2005 above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights. Export control This document well item(s) described herein subject export control regulations. Export might require prior authorization from national authorities. Quick reference data Quick reference data extract product data given Limiting values Characteristics sections this document, such complete, exhaustive legally binding.
Semiconductors
Customer notification This data sheet changed reflect company name Semiconductors, including legal definitions disclaimers. changes were made technical content, except package outline drawings which were updated latest version.
Contact information additional information please visit: http://www.nxp.com sales offices addresses send e-mail salesaddresses@nxp.com
B.V. 2009 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands R75/03/pp11 Date release: 2005 Document order number: 9397 14428

MBD128 PBSS2515YPN VCE(sat) NPN/PNP transistor Product data

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