OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switc

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OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switc

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IPB019N08N3
OptiMOS(TM)3 Power-Transistor
Features Ideal high frequency switching sync. rec. Optimized technology motor drive applications Excellent gate charge DS(on) product (FOM) Very on-resistance RDS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according JEDEC1) target applications Type IPB019N08N3
Product Summary DS(on),max
previous engineering code: IPB022N08N3
Package Marking
PG-TO263-7 019N08N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C2) C=100 Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1
Value 1430
Unit
D,pulse
C=25 D=100 GS=25
C=25
55/175/56
J-STD20 JESD22 figure more detailed information figure more detailed information
Rev.
page
2008-06-24
IPB019N08N3
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction case Thermal resistance, junction ambient thJC thJA minimal footprint cooling area4)
Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=270 DS=80 GS=0 j=25 DS=80 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=10 D=100 GS=6 D=50 Gate resistance Transconductance DS|>2|I DS(on)max, D=100
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev.
page
2008-06-24
IPB019N08N3
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
d(on) d(off) DD=40 GS=10 D=100 G=1.6 GS=0 DS=40
10700 2890
14200 3840
plateau DD=40 GS=0 DD=40 D=100 GS=0
S,pulse
C=25 GS=0 F=100 j=25 R=40 IF=100A F/dt =100 A/µs
figure gate charge parameter definition
Rev.
page
2008-06-24
IPB019N08N3
Power dissipation tot=f(T
Drain current D=f(T GS10
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
limited on-state resistance
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
10-1
0.05 0.02 0.01 single pulse
10-1
10-5
10-4
10-3
10-2
10-1
Rev.
page
2008-06-24
IPB019N08N3
Typ. output characteristics D=f(V DS); j=25 parameter:
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev.
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2008-06-24
IPB019N08N3
Drain-source on-state resistance DS(on)=f(T D=100 GS=10
Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
2700
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
Coss
[pF]
Crss
Rev.
page
2008-06-24
IPB019N08N3
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
1000
Typ. gate charge GS=f(Q gate); D=100 pulsed parameter:
1000
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev.
page
2008-06-24
IPB019N08N3
PG-TO263-7
Rev.
page
2008-06-24
IPB019N08N3
Published Infineon Technologies 81726 Munich, Germany 2008 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. Infineon Technologies components used life-support devices systems only with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system affect safety effectiveness that device system. Life support devices systems intended implanted human body support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev.
page
2008-06-24

OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switc

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