-30V, -14.5A, 7.8m FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
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FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
July 2009
General Description
This P-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
rDS(on) 7.8m, -10V, -14.5A rDS(on) 12m, -4.5V, -12A Extended range (-25V) battery applications protection level 6.5kV typical (note High performance trench technology extremely rDS(on) High power current handling capability RoHS compliant Qualified Q101
SO-8
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Operating Storage Temperature Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -14.5 Units
Thermal Characteristics
Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Case (Note °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6673BZ Device FDS6673BZ _F085 Reel Size 13'' Tape Width 12mm Quantity 2500 units
©2009 Fairchild Semiconductor Corporation FDS6673BZ_F085 Rev.
www.fairchildsemi.com
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current -250µA, -250µA, referenced 25°C -24V, ±25V, mV/°C
Characteristics (Note
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient Drain Source Resistance Forward Transconductance VDS, -250µA -250µA, referenced 25°C -10V -14.5A -4.5V, -12A -10V, -14.5A 125oC -5V, -14.5A -1.9 mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -15V, 1.0MHz 3500 4700
Switching Characteristics (Note
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate Source Gate Charge Gate Drain Charge -15V, -10V, -14.5A -15V, -5V, -14.5A -15V, -10V, 23.5
Drain-Source Diode Characteristics
Source Drain Diode Forward Voltage -2.1A Reverse Recovery Time Reverse Recovery Charge 14.5A, di/dt 100A/µs 14.5A, di/dt 100A/µs -0.7 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
oC/W sec) when mounted copper
oC/W when mounted copper
oC/W when mounted minimun
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%. diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6673BZ_F085 Rev.
www.fairchildsemi.com
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-ID, DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
4.5V 3.5V
-VDS, DRAIN SOURCE VOLTAGE
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-3.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-4.5V -10V
-ID, DRAIN CURRENT(A)
Figure Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-14.5A
rDS(on), DRAIN SOURCE
ON-RESISTANCE
-10V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
150oC
25oC
JUNCTION TEMPERATURE
-VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
-ID, DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 150oC
Figure On-Resistance Gate Source Voltage
-IS, REVERSE DRAIN CURRENT
0.01
150oC
25oC
25oC
-55oC
-55oC
1E-3
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
FDS6673BZ_F085 Rev.
www.fairchildsemi.com
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-VGS, GATE SOURCE VOLTAGE(V)
-10V -15V -20V
6000
Ciss Coss
CAPACITANCE (pF)
1000
Crss
1MHz
GATE CHARGE(nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
1000
-Ig(uA)
150oC
Figure Capacitance Drain Source Voltage
-IAS, AVALANCHE CURRENT(A)
0.01 1E-3 1E-4 -VGS(V)
25oC
25oC
125oC
tAV, TIME AVALANCHE(ms)
Figure
Figure Unclamped Inductive Switching Capability
-ID, DRAIN CURRENT
100s
-ID, DRAIN CURRENT
-10V
-4.5V
THIS AREA LIMITED rDS(on)
SINGLE PULSE RATED 125oC/W
0.01 0.01
AMBIENT TEMPERATURE(oC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Maximum Continuous Drain Current Ambient Temperature
Figure Forward Bias Safe Operating Area
FDS6673BZ_F085 Rev.
www.fairchildsemi.com
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics unless otherwise noted
P(PK), PEAK TRANSIENT POWER
-10V
SINGLE PULSE 125oC/W 25oC
PULSE WIDTH (sec)
Figure Junction-to-Case Transient Thermal Response Curve
NORMALIZED THERMAL IMPEDANCE,
DUTY CYCLE-DESCENDING ORDER
0.01
0.05 0.02 0.01
SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
1E-3
1E-4
RECTANGULAR PULSE DURATION (sec)
Figure Junction-to-Ambient Transient Thermal Response Curve
FDS6673BZ_F085 Rev.
www.fairchildsemi.com
FDS6673BZ_F085 P-Channel PowerTrench® MOSFET
TRADEMARKS following includes registered unregistered trademarks service marks, owned Fairchild Semiconductor and/or global subsidiaries, intended exhaustive list such trademarks. Auto-SPMPowerTrench® F-PFSThe Power Franchise® PowerXSBuild NowFRFET® Global Power ResourceSM Programmable Active DroopCorePLUSGreen FPSQFET® CorePOWERTinyBoostGreen SeriesCTLTinyLogic® GTORapidConfigureCurrent Transfer world, timeEZSWITCH* MegaBuckTinyWireTM* SmartMaxMICROCOUPLERTriFault DetectSMART STARTMicroFETTRUECURRENTTM* MicroPakSPM® SerDesSTEALTHMillerDrive® Fairchild MotionMaxSuperFET® Fairchild Semiconductor Motion-SPMSuperSOTTM-3 FACT Quiet SeriesOPTOLOGIC® UHC® SuperSOTTM-6 FACT OPTOPLANAR® Ultra FRFETSuperSOTTM-8 FAST SPM® FlashWriter XS®* Power-SPMFPS
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PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition Datasheet contains design specifications product development. Specifications change manner without notice. Datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. Datasheet contains specifications product that discontinued Fairchild Semiconductor. datasheet reference information only.
Rev.
Preliminary
First Production
Identification Needed Obsolete
Full Production Production
FDS6673BZ_F085 Rev.
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