EBE20RE4AAFA (256M words bits, Rank) Density: Organization 256M w

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EBE20RE4AAFA (256M words bits, Rank) Density: Organization 256M w

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Registered DDR2 SDRAM DIMM
EBE20RE4AAFA (256M words bits, Rank)
Density: Organization 256M words bits, rank Mounting pieces bits DDR2 SDRAM sealed FBGA Package: 240-pin socket type dual line memory module (DIMM) height: 30.0mm Lead pitch: 1.0mm Lead-free (RoHS compliant) Power supply: 1.8V 0.1V Data rate: 533Mbps/400Mbps (max.) Eight internal banks concurrent operation (components) Interface: SSTL_18 Burst lengths (BL): /CAS Latency (CL): Precharge: auto precharge operation each burst access Refresh: auto-refresh, self-refresh Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs +85°C 3.9µs +85°C +95°C Operating case temperature range +95°C
Features
Double-data-rate architecture; data transfers clock cycle high-speed data transfer realized bits prefetch pipelined architecture Bi-directional differential data strobe (DQS /DQS) transmitted/received with data capturing data receiver edge-aligned with data READs; centeraligned with data WRITEs Differential clock inputs /CK) aligns transitions with transitions Commands entered each positive edge; data referenced both edges Posted /CAS programmable additive latency better command data efficiency Off-Chip-Driver Impedance Adjustment On-DieTermination better signal quality /DQS disabled single-ended Data Strobe operation piece clock driver, pieces register driver piece serial EEPROM bits EEPROM) Presence Detect (PD)
Document E0440E41 (Ver. 4.1) Date Published February 2006 Japan Printed Japan URL: http://www.elpida.com Elpida Memory, Inc. 2003-2006
EBE20RE4AAFA
Ordering Information
Data rate Mbps (max.) Component JEDEC speed bin* (CL-tRCD-tRP) DDR2-533 (4-4-4) DDR2-400 (3-3-3) Contact Gold
Part number EBE20RE4AAFA-5C-E EBE20RE4AAFA-4A-E
Package 240-pin DIMM (lead-free)
Mounted devices EDE1104AASE-5C-E EDE1104AASE-5C-E EDE1104AASE-4A-E
Note: Module /CAS latency component
Configurations
Front side
Back side
name VREF /DQS0 DQS0 /DQS1 DQS1 /RESET DQ10 DQ11 DQ16 DQ17 /DQS2 DQS2
name /CAS DQ32 DQ33 /DQS4 DQS4 DQ34 DQ35
name DQS9 /DQS9 DQ12 DQ13 DQS10 /DQS10 DQ14 DQ15 DQ20 DQ21 DQS11 /DQS11
name /CK0 /RAS /CS0 ODT0 DQ36 DQ37 DQS13 /DQS13 DQ38 DQ39 DQ44
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
name DQ18 DQ19 DQ24 DQ25 /DQS3 DQS3 DQ26 DQ27 /DQS8 DQS8 CKE0 name DQ40 DQ41 /DQS5 DQS5 DQ42 DQ43 DQ48 DQ49 /DQS6 DQS6 DQ50 DQ51 DQ56 DQ57 /DQS7 DQS7 DQ58 DQ59 name DQ22 DQ23 DQ28 DQ29 DQS12 /DQS12 DQ30 DQ31 DQS17 /DQS17 name DQ45 DQS14 /DQS14 DQ46 DQ47 DQ52 DQ53 DQS15 /DQS15 DQ54 DQ55 DQ60 DQ61 DQS16 /DQS16 DQ62 DQ63 VDDSPD
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Description
name (AP) BA0, BA1, DQ63 /RAS /CAS /CS0 CKE0 /CK0 DQS0 DQS17, /DQS0 /DQS17 VDDSPD VREF ODT0 /RESET Function Address input address Column address Auto precharge Bank select address Data input/output Check (Data input/output) address strobe command Column address strobe command Write enable Chip select Clock enable Clock input Differential clock input Input output data strobe Clock input serial Data input/output serial Serial address input Power internal circuit Power serial EEPROM Input reference voltage Ground control Reset (forces register inputs low) connection
Note: Reset connected both reset register.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Serial Matrix*1
Byte Function described Number bytes utilized module manufacturer Total number bytes serial device Memory type Number address Number column address Number DIMM ranks Module data width Module data width continuation Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 value Comments bytes bytes DDR2 SDRAM SSTL 1.8V 3.75ns* 5.0ns* 0.5ns* 0.6ns* 7.8µs Registered Normal 0.1V 3.75ns* 5.0ns* 0.5ns* 0.6ns* 5.0ns* 0.6ns*
Voltage interface level this assembly SDRAM cycle time, SDRAM access from clock (tAC)
DIMM configuration type Refresh rate/type Primary SDRAM width Error checking SDRAM width Reserved SDRAM device attributes: Burst length supported SDRAM device attributes: Number banks SDRAM device SDRAM device attributes: /CAS latency Reserved DIMM type information SDRAM module attributes SDRAM device attributes: General Minimum clock cycle time
Maximum data access time (tAC) from clock
Minimum clock cycle time
Maximum data access time (tAC) from clock
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Byte
Function described Minimum precharge time (tRP)
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
value
Comments 15ns 7.5ns 15ns 45ns 0.25ns* 0.35ns* 0.38ns* 0.48ns* 0.10ns* 0.15ns* 0.23ns* 0.28ns* 15ns*
Minimum active active delay (tRRD) Minimum /RAS /CAS delay (tRCD) Minimum active precharge time (tRAS) Module rank density Address command setup time before clock (tIS)
Address command hold time after clock (tIH) Data input setup time before clock (tDS) Data input hold time after clock (tDH)
Write recovery time (tWR) Internal write read command delay (tWTR) Internal read precharge command delay (tRTP)
7.5ns* 10ns*
7.5ns*
Memory analysis probe characteristics Extension Byte Active command period (tRC) Auto refresh active/ Auto refresh command cycle (tRFC) SDRAM cycle max. (tCK max.) Dout skew (tDQSQ) Data hold skew (tQHS)
60ns*
127.5ns* 8ns*
0.30ns* 0.35ns* 0.40ns* 0.45ns* 15µs
relock time
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Byte
Function described Revision Checksum bytes
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
value
Comments Rev.
Manufacturer's JEDEC code Manufacturer's JEDEC code Manufacturer's JEDEC code Manufacturing location Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number
Continuation code Elpida Memory
(ASCII-8bit code) (Space) Initial (Space) Year code (BCD) Week code (BCD)
Module part number Module part number Module part number Revision code Revision code Manufacturing date Manufacturing date Module serial number Manufacture specific data
Note: These specifications defined based component specification, module.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Block Diagram
/RCS0 DQS0 /DQS0 DQ11 /DQS /DQS DQS9 /DQS9 /DQ7 DQ12 DQ15 /DQS /DQS
DQS1 /DQS1
DQS10 /DQS10
DQS2 /DQS2
/DQS
DQS11 /DQS11
/DQS
DQ16 DQ19
DQ20 DQ23
DQS3 /DQS3
/DQS
DQS12 /DQS12
/DQS
DQ24 DQ27
DQ28 DQ31
DQS4 /DQS4
/DQS
DQS13 /DQS13
DQ36 DQ39
/DQS
DQ32 DQ35
DQS5 /DQS5
/DQS
DQS14 /DQS14
/DQS
DQ40 DQ43
DQ44 DQ47
Serial
DQS6 /DQS6 DQ48 DQ51 /DQS
DQS15 /DQS15
/DQS
DQ52 DQ55
DQS7 /DQS7
/DQS
DQS16 /DQS16
/DQS VDDSPD VREF
DQ56 DQ59
DQ60 DQ63
Serial
DQS8 /DQS8
/DQS
DQS17 /DQS17
/DQS
D17: bits DDR2 SDRAM bits EEPROM PLL: CU877 Register: SSTU32864
/CS*2 /RAS /CAS CKE0 ODT0
/RCS0 /CS: SDRAMs RBA0 RBA2 BA2: SDRAMs RA13 A13: SDRAMs /RRAS /RAS: SDRAMs /RCAS /CAS: SDRAMs RCKE0 CKE: SDRAMs /RWE /WE: SDRAMs RODT0 ODT0: SDRAMs
Notes: wring changed within nibble. connects D/CS register /CSR register2. /CSR register1 D/CS register2 connects VDD. /RESET, PCK7 /PCK7 connect both registers. Other signals registers.
PCK0 PCK6, PCK8, PCK9 SDRAMs /PCK0 /PCK6, /PCK8, /PCK9 /CK: SDRAMs PCK7 register /PCK7 /CK: register
/CK0 /RESET
/RST /RESET*3 PCK7*3
/PCK7*3
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Differential Clock Wiring (CK0, /CK0)
(nominal)
OUT1
SDRAM
SDRAM
/CK0
Register
Feedback
OUT'N'
Feedback
Register
Notes: clock delay from input clock input SDRAM register willl (nominal). Input, output feedback clock lines terminated from line line shown, from line ground. Only output shown output type. additional outputs will wired similar manner. Termination resistors feedback path clocks located close input possible.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Electrical voltages referenced (GND). Absolute Maximum Ratings
Parameter Voltage relative Supply voltage relative Short circuit output current Power dissipation Operating case temperature Storage temperature Symbol Tstg Value -0.5 +2.3 -0.5 +2.3 +100 Unit Note
Note: DDR2 SDRAM component specification. Supporting +85°C being able extend +95°C with doubling auto-refresh commands frequency 32ms period (tREFI 3.9µs) higher temperature self-refresh entry control EMSR required. Caution Exposing device stress above those listed Absolute Maximum Ratings could cause permanent damage. device meant operated under conditions outside limits described operational section this specification. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Operating Conditions +85°C) (DDR2 SDRAM Component Specification)
Parameter Supply voltage Symbol VDD, VDDQ VDDSPD Input reference voltage Termination voltage input logic high input input logic high input VREF (DC) (DC) (AC) (AC) min. 0.49 VDDQ VREF 0.04 VREF 0.125 -0.3 VREF 0.250 typ. max. Unit Notes
0.50 VDDQ 0.51 VDDQ VREF VREF 0.04 VDDQ 0.3V VREF 0.125 VREF 0.250
Notes: value VREF selected user provide optimum noise margin system. Typically value VREF expected about VDDQ transmitting device VREF expected track variations VDDQ. Peak peak noise VREF exceed VREF (DC). transmitting device must track VREF receiving device. VDDQ must equal VDD.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Characteristics +85°C, 1.8V 0.1V,
Parameter Operating current (ACT-PRE) Symbol Grade max. Unit Test condition bank; (IDD), (IDD), tRAS tRAS min.(IDD); between valid commands; Address inputs SWITCHING; Data inputs SWITCHING bank; IOUT 0mA; CL(IDD), (IDD), (IDD), tRAS tRAS min.(IDD); tRCD tRCD (IDD); between valid commands; Address inputs SWITCHING; Data pattern same IDD4W banks idle; (IDD); Other control address inputs STABLE; Data inputs FLOATING banks idle; (IDD); Other control address inputs STABLE; Data inputs FLOATING banks idle; (IDD); Other control address inputs SWITCHING; Data inputs SWITCHING banks open; (IDD); Other control address inputs STABLE; Data inputs FLOATING Fast Exit MRS(12)
IDD0
2210
Operating current (ACT-READ-PRE)
IDD1
2430
Precharge power-down standby current
IDD2P
Precharge quiet standby IDD2Q current
1110
Idle standby current
IDD2N
1290
IDD3P-F Active power-down standby current IDD3P-S
1290
Slow Exit MRS(12)
Active standby current
IDD3N
2120
banks open; (IDD), tRAS tRAS max.(IDD), (IDD); between valid commands; Other control address inputs SWITCHING; Data inputs SWITCHING banks open, continuous burst reads, IOUT 0mA; CL(IDD), (IDD), tRAS tRAS max.(IDD), (IDD); between valid commands; Address inputs SWITCHING; Data pattern same IDD4W banks open, continuous burst writes; CL(IDD), (IDD), tRAS tRAS max.(IDD), (IDD); between valid commands; Address inputs SWITCHING; Data inputs SWITCHING
Operating current (Burst read operating)
IDD4R
3960
Operating current (Burst write operating)
IDD4W
3960
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Parameter
Symbol
Grade
max.
Unit
Test condition (IDD); Refresh command every tRFC (IDD) interval; between valid commands; Other control address inputs SWITCHING; Data inputs SWITCHING Self Refresh Mode; 0.2V; Other control address inputs FLOATING; Data inputs FLOATING bank interleaving reads, IOUT 0mA; CL(IDD), tRCD (IDD) (IDD); (IDD), (IDD), tRRD tRRD(IDD), tRCD (IDD); between valid commands; Address inputs STABLE during DESELECTs; Data pattern same IDD4R;
Auto-refresh current
IDD5
6970
Self-refresh current
IDD6
Operating current (Bank interleaving)
IDD7
7030
Notes:
specifications tested after device properly initialized. Input slew rate specified Input Test Condition. parameters specified with disabled. Data consists DQS, /DQS, RDQS /RDQS. values must with combinations EMRS bits Definitions defined (AC) (max.) defined (AC) (min.) STABLE defined inputs stable level FLOATING defined inputs VREF VDDQ/2 SWITCHING defined inputs changing between every other clock cycle (once clocks) address control signals, inputs changing between every other data transfer (once clock) signals including masks strobes. Refer Timing Test Conditions.
Timing Test Conditions purposes testing, following parameters utilized.
DDR2-533 Parameter CL(IDD) tRCD(IDD) tRC(IDD) tRRD(IDD) tCK(IDD) tRAS(min.)(IDD) tRAS(max.)(IDD) tRP(IDD) tRFC(IDD) 4-4-4 3.75 70000 127.5 DDR2-400 3-3-3 70000 127.5 Unit
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Characteristics +85°C, VDD, VDDQ 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Input leakage current Output leakage current Symbol Value 0.603 0.603 VDDQ +13.4 -13.4 Unit Notes VDDQ VOUT
Minimum required output pull-up under test load Maximum required output pull-down under test load Output timing measurement reference level VOTR Output minimum sink current Output minimum source current
Notes:
VDDQ device under test referenced. VDDQ 1.7V; VOUT 1.42V. VDDQ 1.7V; VOUT 0.28V. value VREF applied receiving device expected VTT. After calibration 25°C, VDDQ 1.8V.
Characteristics +85°C, VDD, VDDQ 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter differential input voltage differential cross point voltage differential cross point voltage Symbol (AC) (AC) (AC) min. VDDQ 0.175 VDDQ 0.125 max. VDDQ VDDQ 0.175 VDDQ 0.125 Unit Notes
Notes: VID(AC) specifies input differential voltage |VTR -VCP| required switching, where true input signal (such DQS, LDQS UDQS) complementary input signal (such /CK, /DQS, /LDQS /UDQS). minimum value equal VIH(AC) VIL(AC). typical value VIX(AC) expected about VDDQ transmitting device VIX(AC) expected track variations VDDQ VIX(AC) indicates voltage which differential input signals must cross. typical value VOX(AC) expected about VDDQ transmitting device VOX(AC) expected track variations VDDQ VOX(AC) indicates voltage which differential output signals must cross.
VDDQ
VSSQ
Crossing point
Differential Signal Levels*1,
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Electrical Characteristics +85°C, VDD, VDDQ 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter effective impedance value EMRS (A6, effective impedance value EMRS (A6, Deviation with respect VDDQ/2 Symbol Rtt1(eff) Rtt2(eff) min. -3.75 typ. max. +3.75 Unit Note
Note: Test condition measurements. Measurement Definition Rtt(eff) Apply (AC) (AC) test separately, then measure current I(VIH(AC)) I(VIL(AC)) respectively. VIH(AC), VDDQ values defined SSTL_18.
Rtt(eff)
VIH(AC) VIL(AC) I(VIH(AC)) I(VIL(AC))
Measurement Definition Measure voltage (VM) test (midpoint) with load.
VDDQ
100%
Default Characteristics +85°C, VDD, VDDQ 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Output impedance Pull-up pull-down mismatch Output slew rate 12.6 typ. max. 23.4 Unit V/ns Notes
Notes: Impedance measurement condition output source current: VDDQ 1.7V; VOUT 1420mV; (VOUT-VDDQ)/IOH must less than 23.4 values VOUT between VDDQ VDDQ-280mV. Impedance measurement condition output sink current: VDDQ 1.7V; VOUT 280mV; VOUT/IOL must less than 23.4 values VOUT between 280mV. Mismatch absolute value between pull pull down, both measured same temperature voltage. Slew rate measured from VIL(AC) VIH(AC). absolute value slew rate measured from equal greater than slew rate measured from This guaranteed design characterization.
Capacitance 25°C, 1.8V 0.1V)
Parameter Input capacitance Input capacitance Data input/output capacitance Symbol Pins Address, /RAS, /CAS, /WE, /CS, CKE, DQS, /DQS, min. max. Unit Note
Notes: Register component specification. component specification. DDR2 SDRAM component specification.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Characteristics +85°C, VDD, VDDQ 1.8V 0.1V, (DDR2 SDRAM Component Specification)
Frequency (Mbps) Parameter /CAS latency Active read write command delay Precharge command period Active active/auto refresh command time output access time from output access time from high-level width low-level width half period Clock cycle time input hold time input setup time Control Address input pulse width each input input pulse width each input Data-out high-impedance time from CK,/CK Data-out low-impedance time from CK,/CK DQS-DQ skew associated signals hold skew factor DQ/DQS output hold time from Write command first latching transition input high pulse width input pulse width falling edge setup time falling edge hold time from Mode register command cycle time Write preamble setup time Write postamble Write preamble Address control input hold time Address control input setup time Read preamble Read postamble Active precharge command Active auto-precharge delay Active bank active bank command period Symbol tRCD tDQSCK tIPW tDIPW tDQSQ tQHS tDQSS tDQSH tDQSL tDSS tDSH tMRD tWPRES tWPST tWPRE tRPRE tRPST tRAS tRAP tRRD min. -500 -450 0.45 0.45 min. (tCL, tCH) 3750 0.35 min. tQHS 0.25 0.35 0.35 0.25 tRCD min. max. +500 +450 0.55 0.55 8000 max. max. 0.25 70000 min. -600 -500 0.45 0.45 min. (tCL, tCH) 5000 0.35 min. tQHS 0.25 0.35 0.35 0.25 tRCD min. max. +600 +500 0.55 0.55 8000 max. max. 0.25 70000 Unit Notes
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Frequency (Mbps) Parameter Write recovery time Auto precharge write recovery precharge time Internal write read command delay Internal read precharge command delay Symbol tDAL tWTR tRTP min. (tWR/tCK)+ (tRP/tCK) tRFC 127.5 max. min. (tWR/tCK)+ (tRP/tCK) tRFC 127.5 max. Unit Notes
Exit self refresh non-read command tXSNR Exit self refresh read command tXSRD
Exit precharge power down nontXP read command Exit active power down read tXARD command Exit active power down read command tXARDS (slow exit/low power mode) minimum pulse width (high tCKE pulse width) Output impedance test driver delay Auto refresh active/auto refresh command time Average periodic refresh interval (0°C +85°C) (+85°C +95°C) Minimum time clocks remains after asynchronously drops tOIT tRFC tREFI tREFI tDELAY
Notes:
each terms above, already integer, round next higher integer. Additive Latency. defines which active power down exit timing applied. figures Input Waveform Timing referenced from input signal crossing VIH(AC) level rising signal VIL(AC) falling signal applied device under test. figures Input Waveform Timing referenced from input signal crossing VIH(DC) level rising signal VIL(DC) falling signal applied device under test.
/DQS
VDDQ (AC)(min.) (DC)(min.) VREF (DC)(max.) (AC)(max.)
VDDQ (AC)(min.) (DC)(min.) VREF (DC)(max.) (AC)(max.)
Input Waveform Timing (tDS, tDH)
Input Waveform Timing (tIS, tIH)
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Electrical Characteristics (DDR2 SDRAM Component Specification)
Parameter turn-on delay turn-on turn-on (power down mode) turn-off delay turn-off turn-off (power down mode) power down entry latency power down exit latency Symbol tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD min. tAC(min) tAC(min) 2000 tAC(min) tAC(min) 2000 max. tAC(max) 1000 2tCK tAC(max) 1000 tAC(max) 2.5tCK tAC(max) 1000 Unit Notes
Notes: turn time when device leaves high impedance resistance begins turn turn time when resistance fully Both measured from tAOND. turn time when device starts turn resistance. turn time when high impedance. Both measured from tAOFD.
Input Test Conditions
Parameter Input reference voltage Input signal maximum peak peak swing Input signal maximum slew rate Symbol VREF VSWING(max.) SLEW Value VDDQ Unit V/ns Notes
Notes: Input waveform timing referenced input signal crossing through VREF level applied device under test. input signal minimum slew rate maintained over range from VIL(DC) (max.) VIH(AC) (min.) rising edges range from VIH(DC) (min.) VIL(AC) (max.) falling edges shown below figure. timings referenced with input waveforms switching from VIL(AC) VIH(AC) positive transitions VIH(AC) VIL(AC) negative transitions.
Start falling edge input timing Start rising edge input timing
VDDQ (AC)(min.) (DC)(min.)
VSWING(max.)
VREF (DC)(max.) (AC)(max.)
Falling slew (DC)(min.) (AC)(max.)
Rising slew
(AC) min. (DC)(max.)
Input Test Signal Wave forms
Measurement point
Output Load
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Functions
(input pin) master clock inputs. inputs except DMs, DQSs referred cross point rising edge VREF level. When read operation, DQSs referred cross point /CK. When write operation, referred cross point VREF level. DQSs write operation referred cross point /CK. (input pin) When low, commands data input. When high, inputs ignored. However, internal operations (bank active, burst operations, etc.) held. /RAS, /CAS, (input pins) These pins define operating commands (read, write, etc.) depending combinations their voltage levels. "Command operation". (input pins) address (AX0 AX13) determined level cross point rising edge VREF level bank active command cycle. Column address (AY0 AY9, AY11) loaded cross point rising edge VREF level read write command cycle. This column address becomes starting address burst operation. (AP) (input pin) defines precharge mode when precharge command, read command write command issued. high when precharge command issued, banks precharged. when precharge command issued, only bank that selected BA1, precharged. high when read write command, auto-precharge function enabled. While low, auto-precharge function disabled. BA0, BA1, (input pin) BA0, bank select signals (BA). memory array divided into banks: bank bank (See Bank Select Signal Table) [Bank Select Signal Table]
Bank Bank Bank Bank Bank Bank Bank Bank
Remark: VIH. VIL.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
(input pin) controls power down self-refresh. power down self-refresh commands entered when driven exited when resumes high. level must kept cycle least, that changes cross point rising edge VREF level with proper setup time tIS, next rising edge level must kept with proper hold time tIH. (input output pins) Data input output from these pins. (input output pin) /DQS provide read data strobes output) write data strobes input). (power supply pins) 1.8V applied. (VDD internal circuit.) VDDSPD (power supply pin) 1.8V applied (For serial EEPROM). (power supply pin) Ground connected. /RESET(input pin) LVCMOS reset input. When /RESET Low, registers reset.
Detailed Operation Part Timing Waveforms
Refer EDE1104AASE, EDE1108AASE datasheet (E0404E). pins component device fixed level module board. DIMM /CAS latency component registered type.
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
Physical Outline
Unit:
4.00 (DATUM -A-)
Component area (Front)
63.00 133.35 55.00
1.27 0.10
10.00
17.80
4.00
Component area (Back)
4.00
FULL
3.00
Detail
2.50 0.20
Detail 1.00 4.00
0.20 0.15
(DATUM -A-)
2.50 FULL
5.00
3.80
0.80 0.05
1.50 0.10
ECA-TS2-0093-01
Data Sheet E0440E41 (Ver. 4.1)
30.00
EBE20RE4AAFA
CAUTION HANDLING MEMORY MODULES
When handling inserting memory modules, sure touch components modules, such memory ICs, chip capacitors chip resistors. necessary avoid undue mechanical stress these components prevent damaging them. particular, push module cover drop modules order protect from mechanical defects, which would electrical defects. When re-packing memory modules, sure modules touching each other. Modules contact with other modules cause excessive mechanical stress, which damage modules.
MDE0202
NOTES CMOS DEVICES
PRECAUTION AGAINST DEVICES
Exposing devices strong electric field cause destruction gate oxide ultimately degrade devices operation. Steps must taken stop generation static electricity much possible, quickly dissipate when once occurred. Environmental control must adequate. When dry, humidifier should used. recommended avoid using insulators that easily build static electricity. devices must stored transported anti-static container, static shielding conductive material. test measurement tools including work bench floor should grounded. operator should grounded using wrist strap. devices must touched with bare hands. Similar precautions need taken boards with semiconductor devices
HANDLING UNUSED INPUT PINS CMOS DEVICES
connection CMOS devices input pins cause malfunction. connection provided input pins, possible that internal input level generated noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar NMOS devices. Input levels CMOS devices must fixed high using pull-up pull-down circuitry. Each unused should connected with resistor, considered have possibility being output pin. unused pins must handled accordance with related specifications.
STATUS BEFORE INITIALIZATION DEVICES
Power-on does necessarily define initial status devices. Production process does define initial operation status device. Immediately after power source turned devices with reset function have been initialized. Hence, power-on does guarantee output levels, settings contents registers. devices initialized until reset signal received. Reset operation must executed immediately after power-on devices having reset function.
CME0107
Data Sheet E0440E41 (Ver. 4.1)
EBE20RE4AAFA
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M01E0107
Data Sheet E0440E41 (Ver. 4.1)

EBE20RE4AAFA (256M words bits, Rank) Density: Organization 256M w

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