| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
AZ358/358C consists independent, high gain internally frequency compen
Top Searches for this datasheetData Sheet POWER DUAL OPERATIONAL AMPLIFIERS General Description AZ358/358C consists independent, high gain internally frequency compensated operational amplifiers, specifically designed operate from single power supply. Operation from split power supply also possible power supply current drain independent magnitude power supply voltages. AZ358/358C series Compatible with Industry standard 358. AZ358C more stringent input offset voltage than AZ358. AZ358/358C series available standard packages DIP-8 SOIC-8. AZ358/358C Internally Frequency Compensated Unity Gain Large Voltage Gain: 100dB (Typical) Input Bias Current: 20nA (Typical) Input Offset Voltage: (Typical) Supply Current: 0.5mA (Typical) Wide Power Supply Voltage Range: Single Supply: Dual Supplies: 1.5V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: VCC-1.5V Power Drain Suitable Battery Operation Applications Battery Charger Cordless Telephone Switching Power Supply SOIC-8 DIP-8 Figure Package Types AZ358/358C Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Configuration AZ358/358C Package/P Package (SOIC-8/DIP-8) OUTPUT INPUT 1INPUT OUTPUT INPUT 2INPUT Figure Configuration AZ358/358C (Top View) Functional Block Diagram 100A INPUTQ1 OUTPUT INPUT+ Figure Functional Block Diagram AZ358/358C (Each Amplifier) Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Ordering Information AZ358/358C AZ358 Lead Free Green Tape Reel Blank: Tube Circuit Type Blank: AZ358 AZ358C Package SOIC-8 DIP-8 Package Input Offset Voltage Part Number Lead Free AZ358M-E1 AZ358MTR-E1 AZ358CM-E1 AZ358CMTR-E1 AZ358P-E1 AZ358CP-E1 Lead Free AZ358M-G1 AZ358MTR-G1 AZ358CM-G1 AZ358CMTR-G1 AZ358P-G1 AZ358CP-G1 Marking Lead Free AZ358M-E1 AZ358M-E1 358CM-E1 358CM-E1 AZ358P-E1 AZ358CP-E1 Lead Free AZ358M-G1 AZ358M-G1 358CM-G1 358CM-G1 AZ358P-G1 AZ358CP-G1 Packing Type Tube Tape Reel Tube Tape Reel Tube Tube SOIC-8 Maximum Value DIP-8 Maximum Value Semiconductor's Pb-free products, designated with "E1" suffix part number, RoHS compliant. Products with "G1" suffix available green packages. Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Absolute Maximum Ratings (Note Parameter Power Supply Voltage Differential Input Voltage Input Voltage Input Current (VIN<-0.3V) (Note Output Short Circuit Ground (One Amplifier) (Note 25oC Power Dissipation (TA=25oC) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, Seconds) AZ358/358C Symbol Value -0.3 Continuous DIP-8 SOIC-8 Unit TSTG TLEAD Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device under these conditions implied. Exposure "Absolute Maximum Ratings" extended periods affect device reliability. Note This input current will only exist when voltage input leads driven negative. collector-base junction input transistors becoming forward biased thereby acting input diode clamps. addition this diode action, there also lateral parasitic transistor action chip. This transistor action cause output voltages amps voltage level ground large overdrive) time duration that input driven negative. This destructive normal output states will re-establish when input voltage, which negative, again returns value greater than -0.3V 25oC) Note Short circuits from output cause excessive heating eventual destruction. When considering short circuits ground, maximum output current approximately 40mA independent magnitude VCC. values supply voltage excess +12V, continuous short circuits exceed power dissipation ratings cause eventual destruction. Destructive dissipation result from simultaneous shorts amplifiers. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol Unit Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics VCC=5V, GND=0, TA=25oC unless otherwise specified. Parameter Input Offset Voltage Input Bias Current (Note Input Offset Current Input Common Mode Voltage Range (Note Supply Current Large Signal Voltage Gain Common Mode Rejection Ratio Power Supply Rejection Ration Channel Separation (Note Source Output Current Sink Output Short Ground Circuit Symbol IBIAS CMRR PSRR ISOURCE ISINK Test Conditions VO=1.4V, RS=0, VCC=5V IIN+ IIN-, VCM=0V IIN+-IIN-, VCM=0V VCC=15V RL=, Over full temperature VCC=15V range Amps VCC=5V VCC=15V, RL2, VO=1V VCM=0V (VCC-1.5)V VCC=5V f=1KHz 20KHz VIN+=1V, VIN-=0V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V Output Voltage Swing VCC=15V VCC=15V, RL=2K VCC=15V, RL=10K VCC=5V, RL=10K 12.5 13.5 -120 AZ358 AZ358C VCC-1.5 AZ358/358C Unit Note direction input current input stage. This current essentially constant, independent state output loading change exists input lines. Note input common-mode voltage either input signal voltage should allowed negatively more than 0.3V 25oC). upper common-mode voltage range VCC-1.5V 25oC), either both inputs +18V without damages, independent magnitude VCC. Note proximity external components, insure that coupling originating stray capacitors between these external parts. This typically detected this type capacitance increases higher frequencies. Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics AZ358/358C Input Voltage (±VDC) Input Current (nA) NEGATIVE VCC=15V POSITIVE Power Supply Voltage (±VDC) Temperature (oC) Figure Input Voltage Range Figure Input Current Supply Current Drain (mA) Voltage Gain (dB) RL=2K RL=20K TA:0 Power Supply Voltage Power Supply Voltage Figure Supply Current Figure Voltage Gain Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AZ358/358C Voltage Gain (dB) 0.1uF CC/2 10HZ 100HZ 1kHZ 10kHZ 100kHZ 1MHZ Input Voltage Output Voltage VCC: 15VDC =15V Frequency (Hz) Time Figure Open Loop Frequency Response Figure Voltage Follower Pulse Response VOUT 100K 25oC Output Voltage (mV) 50pF Output Swing (VP-P) +7VDC Input Output 100K 1000K Time Frequency (Hz) Figure Voltage Follower Pulse Response (Small Signal) Figure Large Signal Frequency Response Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AZ358/358C Output Voltage Referenced VCC/2 Output Voltage VCC=5V VCC=15V VCC/2 Independent 1E-3 0.01 0.01 1E-3 0.01 Output Source Current (mA) Output Sink Current (mA) Figure Output Characteristics Current Sourcing Figure Output Characteristics Current Sinking Output Current (mA) Temperature (oC) Figure Current Limiting Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Typical Application AZ358/358C Opto Isolator AZ358/C Line SMPS Battery Pack Current Sense AZ358/C AZ431 Figure Battery Charger 910K 100K 100K AZ358/C VIN(+) 100K 100K AZ358/C 100K 100K 100K Figure Power Amplifier Figure Summing Amplifier Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Typical Application (Continued) AZ358/358C 100k 0.1F AZ358/C 6.2k 100k 100k AV=1+R2/R1 AZ358/C AV=11 shown) Figure Coupled Non-Inverting Amplifier Figure Fixed Current Sources 0.01F 0.001F 100K 0.01F AZ358/C 100k AZ358/C 100K 100K 100k fo=1KHz AV=2 Figure Pulse Generator Figure Coupled Low-Pass Active Filter Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AZ358/358C 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) 3.710(0.146) 4.310(0.170) 3.200(0.126) 3.600(0.142) 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Apr. 2008 Rev. Semiconductor Manufacturing Limited Data Sheet POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AZ358/358C 4.700(0.185) 5.100(0.201) 1.350(0.053) 1.750(0.069) 0.320(0.013) 0.675(0.027) 0.725(0.029) 5.800(0.228) 6.200(0.244) 20:1 1.270(0.050) 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Apr. 2008 Rev. Semiconductor Manufacturing Limited Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE Semiconductor Manufacturing Limited reserves right make changes without further notice products specifications herein. Semiconductor Manufacturing Limited does assume responsibility products particular purpose, does Semiconductor Manufacturing Limited assume liability arising application products circuits. Semiconductor Manufacturing Limited does convey license under patent rights other rights rights others. MAIN SITE Headquarters Semiconductor Manufacturing Limited Semiconductor Manufacturing Limited Wafer 1600, Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE Wafer Semiconductor Manufacturing Limited Shanghai Design Group SIM-BCD Semiconductor Manufacturing Co., Ltd. Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Shan Road, Shanghai 200233, China Zone 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Office Semiconductor Corp. Office 30920 Huntwood Ave. Hayward, Semiconductor Corporation 94544, 30920 Huntwood Ave. Hayward, 94544, U.S.A +1-510-324-2988 Fax: +1-510-324-2788 +1-510-324-2988 Fax: +1-510-324-2788 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room SIM-BCD Semiconductor Fuzhong Road, Futian District, Shenzhen, 298-1, Guang Road,(Taiwan) Company Limited Shanghai Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Tel: +86-755-8826 Center, Tel: Taiwan Room Noble 7951 No.1006, Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Other recent searchesTIPL791 - TIPL791 TIPL791 Datasheet TIPL791A - TIPL791A TIPL791A Datasheet SUP57N20-33 - SUP57N20-33 SUP57N20-33 Datasheet SN74LVT32244 - SN74LVT32244 SN74LVT32244 Datasheet RA78K0R - RA78K0R RA78K0R Datasheet ENN8298 - ENN8298 ENN8298 Datasheet D6321ZOV141RA75 - D6321ZOV141RA75 D6321ZOV141RA75 Datasheet 10X1000us - 10X1000us 10X1000us Datasheet 9004260000 - 9004260000 9004260000 Datasheet 2SC5361 - 2SC5361 2SC5361 Datasheet
Privacy Policy | Disclaimer |