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BTS4175SGA Smart High-Side Power Switch Automotive Power
Top Searches for this datasheetData Sheet, Rev.1.0, April 2008 BTS4175SGA Smart High-Side Power Switch Automotive Power BTS4175SGA 7.2.1 7.2.2 Overview Block Diagram Configuration Assignment Definitions Functions Voltage Current Definition General Product Characteristics Absolute Maximum Ratings Functional Range Thermal Resistance Power Stage Output ON-State Resistance Turn Characteristics Inductive Output Clamp Electrical Characteristics Power Stage Protection Mechanisms Loss Ground Protection Undervoltage Protection Overvoltage Protection Reverse Polarity Protection Overload Protection Electrical Characteristics Protection Functions Diagnostic Mechanism Signal Case Failures Diagnostic Open Load, Channel Signal case Over Temperature Electrical Characteristics Diagnostic Functions Input Input Circuitry Electrical Characteristics Application Information Further Application Information Package Outlines Revision History Data Sheet Rev.1.0, 2008-04-29 Smart High-Side Power Switch BTS4175SGA Overview application Channel device Very Stand-by Current CMOS Compatible Inputs Electrostatic Discharge Protection (ESD) Optimized Electromagnetic Compatibility Logic ground independent from load ground Very Leakage Current from load state Green Product (RoHS compliant) Qualified Basic Features PG-DSO-8-24 Description BTS4175SGA single channel Smart High-Side Power Switch. embedded PG-DSO-8-24 package, providing protective functions diagnostics. power transistor built N-channel power MOSFET with charge pump. device monolithically integrated Smart technology. specially designed drive Relay, lamp harsh automotive environment. Table Parameter Operating voltage range Over voltage protection Maximum State resistance 150°C Nominal load current Minimum current limitation Standby current whole device with load Maximum reverse battery voltage Diagnostic Feature Open load Feedback thermal shutdown state Feedback current limitation Diagnostic feedback with open drain output Electrical Parameters (short form) Symbol Value 350m 1.3A 18µA VSOP (AZ) RDS(ON) (nom) IL_SCR IS(off) -Vs(REV) Type BTS4175SGA Data Sheet Package PG-DSO-8-24 Marking 4175SGA Rev.1.0, 2008-04-29 BTS4175SGA Overview Protection Functions Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Loss ground loss battery protection Electrostatic discharge protection (ESD) Application types relays, lamps resistive loads Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Block Diagram Block Diagram internal power supply voltage sensor over temperature gate control charge pump clamp inductive load over current switch protection driver logic open load detection Block diagram .emf Figure Block diagram BTS4175SGA Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Configuration Configuration Assignment Figure Configuration Definitions Functions Symbol Function Ground; Ground connection Input channel; Input signal. Activate channel case logic high level Output; Protected High side power output channel Diagnostic feedback; channel. Open drain. Battery voltage; Design wiring simultaneous max. short circuit current also thermal resistance Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Configuration Voltage Current Definition Figure shows terms used this data sheet, with associated convention positive values. Voltage current convention single avec diag.vsd Figure Voltage current definition Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA General Product Characteristics General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 25°C; (unless otherwise specified) Pos. Voltages 4.1.1 4.1.2 4.1.3 Supply voltage Reverse polarity Voltage Parameter Symbol Limit Values Min. Max. Unit Conditions VS(REV) Supply voltage short circuit protection Vbat(SC) RECU 20m, RCable=16m/m, LCable=1µH/m, Input pins 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 Voltage INPUT pins Current through INPUT pins Load current Power dissipation (DC), Inductive load switch energy dissipation, Single pulse Chapter IL(LIM) Power stage PTOT TA=85°C, <150°C Tj=150°C, VS=13.5V, Currents Temperatures 4.1.9 4.1.10 4.1.11 4.1.12 Junction Temperature Storage Temperature Resistivity Resistivity other pins Tstg VESD VESD HBM3) HBM3) Susceptibility subject production test, specified design accordance Q100-012 Q101-006 susceptibility according EIA/JESD 22-A 114B Note: Stresses above ones listed here cause permanent damage device. Exposure absolute maximum rating conditions extended periods affect device reliability. Note: Integrated protection functions designed prevent destruction under fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed continuous repetitive operation. Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA General Product Characteristics Pos. 4.2.1 Functional Range Parameter Operating Voltage Symbol Min. Limit Values Max. Unit Conditions VSOP 4.5V, 0.5V 4.2.2 4.2.3 4.2.4 Undervoltage shutdown Operating current Standby current whole device with load VSUV IGND IS(OFF) <85°C 150°C, Note: Within functional range operates described circuit description. electrical characteristics specified within conditions given related electrical characteristics table. Pos. 4.3.1 4.3.2 Thermal Resistance Parameter Junction Soldering Point Junction Ambient: Channel active Symbol Min. Limit Values Typ. Max. with cooling area1) Unit Conditions RthJS RthJA subject production test, specified design Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Power Stage Power Stage Output ON-State Resistance power stage built N-channel vertical power MOSFET (DMOS) with charge pump. ON-state resistance RDS(ON) depends supply voltage well junction temperature Figure shows dependencies typical ON-state resistance. behavior reverse polarity described Chapter 6.4. 1000 Rdson Rdson Battery voltage Junction perature (°C) Rdson.vsd Figure Typical ON-state resistance high signal (See Chapter input causes power DMOS switch with dedicated slope, which optimized terms emission. Turn Characteristics Figure shows typical timing when switching resistive load. IN_H_min VIN_L_max dV/dt dV/dt Switching times.vsd Figure Turn ON/OFF (resistive) timing Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Power Stage Inductive Output Clamp When switching inductive loads with high side switches, voltage VOUT drops below ground potential, because inductance intends continue driving current. prevent destruction device high voltages, there voltage clamp mechanism implemented that keeps negative output voltage certain level (VS-VDS(AZ)). Please refers Figure Figure details. Nevertheless, maximum allowed load inductance limited. LOGIC VOUT Output clamp.vsd Figure Output clamp VOUT VS-VDS(AZ) tpeak Switching inductance.vsd Figure Switching inductance timing Maximum Load inductance During demagnetization inductive loads, energy dissipated BTS4175SGA. This energy calculated with following equation: Following equation simplifies under assumption Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Power Stage energy, which converted into heat, limited thermal design component. Figure maximum allowed energy dissipation. 1800 1600 1400 1200 EAS(mJ) 1000 Load current EAS.vsd Figure Maximum energy dissipation single pulse, Tj,Start 13.5V Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Power Stage Electrical Characteristics Power Stage Electrical Characteristics: Power stage 13.5 +150 °C,(unless otherwise specified). Typical values given 25°C Pos. 5.4.1 Parameter ON-state resistance channel Symbol Min. Limit Values Typ. Max. Tj=25°C1), Unit Conditions RDS(ON) VIN= Figure 5.4.2 5.4.3 5.4.4 5.4.5 5.4.6 5.4.7 5.4.8 5.4.9 Nominal load current Drain Source clamping Voltage V/µs V/µs Tj=150°C IL(nom) VDS(AZ) IL(OFF) dV/dtON -dV/dtOFF VDS(AZ) VS-VOUT Output leakage current Slew rate VOUT Slew rate VOUT Turn-ON time Includes propagation delay Turn-OFF time Includes propagation delay Internal output pull down TA=85°C1), <150°C1) 4mA2) VIN=0V RL=47, Vs=13.5V Figure tOFF VOUT(OL) subject production test, specified design Voltage measured forcing IDS. Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Protection Mechanisms Protection Mechanisms device provides embedded protective functions. Integrated protection functions designed prevent destruction from fault conditions described data sheet. Fault conditions considered "outside" normal operating range. Protection functions designed neither continuous repetitive operation. Loss Ground Protection case loss module ground, where load remains connected ground, device protects itself automatically turning (when previously remains OFF, regardless voltage applied pin. that case, maximum I(OUTGND) flow output. Undervoltage Protection Below VSOP_min, under voltage mechanism met. supply voltage below under voltage mechanism, device (turns OFF). soon supply voltage above under voltage mechanism, then device switched protection functions operational. Overvoltage Protection There clamp mechanism over voltage protection. guarantee this mechanism operates properly application, current zener diode ZDAZ limited ground resistor. Figure shows typical application withstand overvoltage issues. case supply greater than VS(AZ), power transistor switches voltage across logic section clamped. result, internal ground potential rises VS(AZ). zener diodes, potential rises almost that potential, depending impedance connected circuitry. Integrated resistors provided protect input circuitry from excessive current flow during this condition. VBAT LOGIC Overvoltage protection single with diag.vsd Figure Over voltage protection with external components Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Protection Mechanisms case supply voltage between VS(SC) VDS(AZ), output transistor still operational follow input. channel state, parameters longer warranted lifetime reduced compared normal mode. This specially impacts short circuit robustness, well maximum energy device handle. Reverse Polarity Protection case reverse polarity, intrinsic body diode causes power dissipation. current this intrinsic body diode limited load itself. Additionally, current into ground path logical pins limited maximum current described Chapter 4.1, sometimes with external resistor. Figure shows typical application. RGND resistor used limit current zener protection device. Resistors used limit current logic device protection stage. recommended value RGND 150, 0/1= 15k. case over voltage considered application, RGND replaced Shottky diode. VccµC Micro controller (e.g. XC22xx) RSTPU Zdbody VBAT -VDS(REV) ZDESD L(nom) RGND Reverse Polarity single with diag.vsd Figure Reverse polarity protection with external components Overload Protection case overload, short circuit ground, BTS4175SGA offers protections mechanisms. Current limitation first step, instantaneous power switch maintained safe level limiting current maximum current allowed switch IL(LIM). During this time, DMOS temperature increasing, which affects current flowing DMOS. Thermal protection thermal shutdown, device turns cools down. restart mechanism used, after cooling down, device restarts limits current IL(SCR). Figure shows behavior current limitation function time. Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Protection Mechanisms IL(LIM) IL(SCr) TdST(+) Current limitation with diag full Figure Current limitation function time Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Protection Mechanisms Electrical Characteristics Protection Functions Electrical Characteristics: Protection 13.5 +150 Typical values given 25°C Pos. Parameter Symbol Min. Reverse polarity 6.6.1 Drain source diode voltage during reverse polarity Over voltage protection -VDS(REV) Limit Values Typ. Max. Unit Conditions 150°C VOUT -40°C, 25°C, 150°C 40V1), 40V1) Overvoltage 6.6.2 6.6.3 VS(AZ) Overload condition Initial peak short circuit current limit IL(LIM) (pin 20V; 150µs Repetitive short circuit current limitation Thermal shutdown temperature Thermal shutdown hysteresis 6.6.4 6.6.5 6.6.6 IL(SCR) TjSC subject production test, specified design Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Diagnostic Mechanism Diagnostic Mechanism diagnosis purpose, BTS4175SGA provides status pin. BTS4175SGA status open drain, active circuit. Figure shows equivalent circuitry. long "hard" failure mode occurs (Short circuit Over temperature open load OFF), signal permanently high, required external pull-up logic voltage will exhibit logic high application. suggested value 15k. VccµC Channel Diagnostic Logic full diag.vsd Figure Status output circuitry Table Signal Case Failures truth table V(OL) Table gives quick reference logical state during device operation. Device operation Normal operation Open Load channel Over temp channel potential output exceeds Openload detection voltage 7.2.1 Diagnostic Open Load, Channel open load diagnosis OFF-state, external output pull-up resistor (ROL) recommended. calculation pull-up resistor value, leakage currents open load threshold voltage VOL(OFF) taken into account. Figure gives sketch situation Figure shows typical timing diagram. Ileakage defines leakage current complete system, including IL(OFF) (see Chapter 5.4) external leakages humidity, corrosion, etc. application. reduce stand-by current system, open load resistor switch recommended. Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Diagnostic Mechanism channel OFF, output longer pulled down load VOUT voltage rises nearly This recognized device open load. voltage threshold given VOL(OFF). that case, signal switched logical VSTL. Vbat BTS4175SGA comp. LOFF Ileakage VOL(OFF RGND Rleakage Open Load .vsd Figure Open load detection electrical equivalent circuit VOL(OFF) ST(HIGH) VST(LOW) Diagnostic Open load full diag.vs Figure open load condition Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Diagnostic Mechanism 7.2.2 Signal case Over Temperature case over temperature, junction temperature reaches thermal shutdown temperature TjSC. that case, signal stable remains toggling between VST(L) VST(H). Figure gives sketch situation. Diagnostic Overload full toggling.vs Figure Sense signal overtemperature condition Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Diagnostic Mechanism Electrical Characteristics Diagnostic Functions Electrical Characteristics: Diagnostics 13.5 +150 (unless otherwise specified) Typical values given 13.5V, 25°C Pos. Parameter Symbol Min. Load condition threshold diagnostic 7.3.1 7.3.1 7.3.2 7.3.3 Status output (open drain) High level; Zener limit voltage Status output (open drain) level Open Load detection threshold state1) Short circuit detection voltage Limit Values Typ. Max. Unit Conditions VOL(OFF) VOUT(SC) (HIGH) (LOW) +1,6mA2), Zener Limit voltage =+1,6mA2) Diagnostic timing 7.3.4 7.3.5 Status invalid after positive input tdST(+) slope Status invalid after negative input slope tdST(-) External pull resistor required open load detection state ground resistor RGND used, voltage drop across this resistor added subject production test, specified design Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Input Input Input Circuitry input circuitry CMOS compatible. concept Input react voltage transition voltage threshold. With Schmidt trigger, impossible have device un-defined state, voltage input slowly increasing decreasing. output either cannot linear undefined state. input circuitry compatible with applications. Figure shows electrical equivalent input circuitry. pull down current source ensures channel with floating input. Input circuitry.vsd driver's logic Figure Input circuitry Electrical Characteristics Electrical Characteristics: Diagnostics 13.5 +150 Typical values given 13.5V, 25°C Pos. Parameter Symbol Min. INput pins characteristics 8.2.1 8.2.2 8.2.3 8.2.4 8.2.5 8.2.6 level input voltage High level input voltage Input voltage hysteresis level input current High level input current Input resistance Limit Values Typ. Max. Unit Conditions VIN(L) VIN(H) VIN(HYS) IIN(L) IIN(H) VIN= 0,7V VIN= Figure ground resistor RGND used, voltage drop across this resistor added subject production test, specified design Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Application Information Application Information Note: following information given hint implementation device only shall regarded description warranty certain functionality, condition quality device. RPUST Microcontroller (e.g. XC22xx) Application example single avec diag.vsd VBAT VBAT_SW Figure Application diagram with BTS4175SGA Note: This very simplified example application circuit. function must verified real application. Further Application Information further information visit http://www.infineon.com/ Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Package Outlines Package Outlines 0.33 ±0.08 1.75 MAX. MIN. (1.5) -0.21) MAX. +0.05 -0.01 1.27 0.41 +0.1 -0.05 ±0.2 0.64 ±0.25 Index Marking -0.21) Index Marking (Chamfer) Does include plastic metal protrusion 0.15 max. side Figure PG-DSO-8-24 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) meet world-wide customer requirements environmentally friendly products compliant with government regulations device available green product. Green products RoHS-Compliant (i.e Pbfree finish leads suitable Pb-free soldering according IPC/JEDEC J-STD-020). Data Sheet Rev.1.0, 2008-04-29 BTS4175SGA Revision History Version Revision History Date 2008-03-12 Changes Creation data sheet Data Sheet Rev.1.0, 2008-04-29 Edition 2008-04-29 Published Infineon Technologies 81726 Munich, Germany 2008 Infineon Technologies Rights Reserved. Legal Disclaimer information given this document shall event regarded guarantee conditions characteristics. With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation, warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices, please contact nearest Infineon Technologies Office (www.infineon.com). Warnings technical requirements, components contain dangerous substances. information types question, please contact nearest Infineon Technologies Office. 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