Micro Power Boost Regulator Series White Driver FEATURES Drives L
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SP6691
Micro Power Boost Regulator Series White Driver
FEATURES Drives LEDs 25mA Drives LEDs 20mA High Output Voltage: Optimized Single Supply, 2.7V 4.2V Applications Operates Down High Efficiency: Greater Than Quiescent Current: 20µA Ultra Shutdown Current: 10nA Single Battery Cell Operation Programmable Output Voltage switch (350mV 350mA) Lead Free, RoHS Compliant Packages:
DFN, TSOT SOT23
SHDN
SP6691
APPLICATIONS White Driver High Voltage Bias Digital Cameras Cell Phone Battery Backup Handheld Computers
DESCRIPTION SP6691 micro power boost regulator that specifically designed powering series configuration white LED. part utilizes fixed time architecture consumes only 10nA quiescent current shutdown. voltage operation, down fully utilizes maximal battery life. SP6691 offered DFN, 5-pin SOT-23 TSOT package enables construction complete regulator occupying board space. TYPICAL APPLICATION CIRCUIT
10µH 4.2V
SP6691 SHDN 4.7µF
Jun26-07
Micro Power Boost Regulator Series White Driver
2007 Sipex Corporation
ABSOLUTE MAXIMUM RATINGS
Voltage -0.4 Voltage 2.5V other pins -0.3 0.3V Current into ±1mA 125°C Operating Temperature Range -40°C 85°C Peak Output Current 10us 500mA Specifications 25°C, 3.3, VSHDN VIN, temperature range, unless otherwise specified. PARAMETER Input Voltage Supply Current SYMBOL 0.01 Reference Voltage Hysteresis Input Bias Current Line Regulation Switch Time Switch Saturation Voltage Switch Current Limit SHDN Bias Current SHDN High Threshold (on) SHDN Threshold (off) Switch Leakage Current HYST TOFF VCESAT ILIM ISHDN ISWLK 0.01 0.25 1.17 1.22 Storage Temperature -65°C +150°C Power Dissipation. 200mW Rating
These stress ratings only functional operation device these ratings other above those indicated operation sections specifications below implied. Exposure absolute maximum rating conditions extended periods time affect reliability.
denotes specifications which apply over full operating 13.5 1.27 UNITS Switch Off, VSHDN 3.3V 325mA 1.22V 13.5V Switching SHDN (off) CONDITIONS
ELECTRICAL CHARACTERISTICS
DESCRIPTION
NUMBER NAME SHDN DESCRIPTION connect. Feedback. connect. Switch input internal power switch Ground Input Voltage. Bypass this with capacitor close device possible. Shutdown. Pull high (on) enable. Pull (off) shutdown. connect.
Jun26-07
Micro Power Boost Regulator Series White Driver
2007 Sipex Corporation
DESCRIPTION
NUMBER NAME SHDN DESCRIPTION Switch input internal power switch. Ground Feedback Shutdown. Pull high (on) enable. Pull (off) shutdown. Input Voltage. Bypass this with capacitor close device possible.
FUNCTIONAL DIAGRAM
DISABLE 250ns ONE-SHOT CLEAR DRIVER POWER TRANSISTOR
SHDN
Shutdown Logic
THEORY OPERATION Operation best understood referring functional diagram above typical application circuit front page. along with form band reference. input this circuit completes feedback path from high voltage output through voltage divider, used regulation control input. When voltage slightly above 1.22V, comparator disables most internal circuitry. Current then provided capacitor which slowly discharges until voltage drops below lower hysteresis point about 6mV. then enables internal circuitry, turns chip power, current inductor begins ramp When current through driver transistor reaches about
Jun26-07
450mA, comparator clears latch, which turns driver transistor preset 250nS. instant shutoff, inductor current diverted output through diode During this 250nS time limit, inductor current decreases while energy charges 250ns time period, driver transistor again allowed turn which ramps current back 450mA level. Comparator clears latch, it's output turns driver transistor, this allows delivery L1's stored kinetic energy This switching action continues until output capacitor voltage charged point where band (1.22V). When this condition reached, turns internal circuitry cycle repeats.
2007 Sipex Corporation
Micro Power Boost Regulator Series White Driver
Refer typical application circuit, TAMB 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
Vout Efficiency
5.0V 4.2V
13.0 12.5
Vout
Vout Load Regulation
5.0V 4.2V
Efficiency
12.0 11.5 11.0 Iout (mA)
Iout (mA)
Figure Output Efficiency
Figure Output Load Regulation
Vout Efficiency
5.0V 4.2V 3.3V
16.0
Vout Load Regulation
5.0V 4.2V 3.3V 2.7V
Efficiency
15.5
Vout
15.0
14.5
14.0
Iout (mA)
Iout (mA)
Figure Output Efficiency
Figure Output Load Regulation
Vout Efficiency
5.0V 4.2V
19.0 18.5
Vout
Vout Load Regulation
5.0V 4.2V
Efficiency
18.0 17.5 17.0
Iout (mA)
Iout (mA)
Figure Output Efficiency
Jun26-07
Figure Output Load Regulation
Micro Power Boost Regulator Series White Driver 2007 Sipex Corporation
Refer typical application circuit, TAMB 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
Vout Efficiency
5.0V 4.2V
22.0
Vout Load Regulation
5.0V 4.2V
Efficiency
21.5
Vout
21.0
20.5
Iout (mA)
20.0 Iout (mA)
Figure Output Efficiency
Figure Output Load Regulation
Efficiency
Vout Efficiency
5.0V 4.2V
25.0
Vout Load Regulation
5.0V 4.2V
Iout (mA)
24.5
Vout
24.0
23.5 23.0 Iout (mA)
Figure Output Efficiency
Figure Output Load Regulation
Efficiency
Vout Efficiency
5.0V 4.2V
31.0 30.5
Vout
Vout Load Regulation
5.0V 4.2V
Iout (mA)
30.0 29.5 29.0 Iout (mA)
Figure Output Efficiency
Jun26-07
Figure Output Load Regulation
2007 Sipex Corporation
Micro Power Boost Regulator Series White Driver
Refer typical application circuit, TAMB 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
Shutdown Current (uA)
Quiescent Current (uA)
Input Voltage Tamb=-25C Tamb=25C Tamb=85C
Input Voltage
Figure Quiescent Current
Figure Shutdown Current
Switch Saturation Voltage (mV)
Temperature
Current Limit (mA)
Input Voltage
Figure Current Limit
1.25
Feedback Voltage
Figure Switch Saturation Voltage VCESAT Temperature (ISW 450mA)
Iout/Idc
1.24 1.23 1.22 1.21 1.20
Temperature
Duty Cycle
Figure Feedback Voltage Temperature
Figure Average SHDN Duty Cycle (VIN=3.3V, Standard 4x20mA WLED Evaluation Board, Frequency 100Hz
2007 Sipex Corporation
Jun26-07
Micro Power Boost Regulator Series White Driver
Refer typical application circuit, TAMB 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
VOUT (0.5A/Div)
VOUT (AC)
(0.5A/Div)
Figure Startup Waveform (VIN=3.3V, VOUT=15V, IOUT=20mA)
Figure Typical Switching Waveforms (VIN=3V, VOUT=15V, IOUT=20mA)
IOUT (100mA/Div) VOUT (AC)
(0.5A/Div)
Figure Load Step Transient (VIN=3V, VOUT=21V, 15mA Load Step
Jun26-07
Micro Power Boost Regulator Series White Driver
2007 Sipex Corporation
APPLICATION INFORMATION
Inductor Selection Capacitor Selection
SP6691, internal switch will turned only after inductor current reaches typical current limit (ILIM=450mA). However, there typically propagation delay 200nS between time when current limit reached when switch actually turned off. During this 200nS delay, peak inductor current will increase, exceeding current limit small amount. peak inductor current estimated ILIM VIN(MAX) 200nS
Ceramic capacitors recommended their inherently ESR, which will help produce peak peak output ripple, reduce high frequency spikes. typical application, 4.7µF input capacitor 2.2µF output capacitor sufficient. input output ripple could further reduced increasing value input output capacitors. Place capacitors close SP6691 possible layout. voltage source, reduce output ripple, small feedforward (47pF) across feedback resistor used provide sufficient overdrive error comparator, thus reduce output ripple. Refer Table some suggested capacitors. Table Suggested Capacitor
MANUF. PART NUMBER GRM32RR71E 225KC01B GRM31CR61A 475KA01B C3225X7R1E 225M C3216X5R1A 475K SIZE /VOLTAGE /TYPE 2.2µF /25V 4.7µF /10V 2.2µF /25V 4.7µF /10V 1210 /X5R 1206 /X5R 1210 /X7R 1206 /X5R
larger input voltage lower inductor value, greater peak current. selecting inductor, saturation current specified inductor needs greater than SP6691 peak current avoid saturating inductor, which would result loss efficiency could damage inductor. Choosing inductor with decreases power losses increase efficiency. Refer Table some suggested inductors. Table Suggested inductor
MANUF. PART NUMBER 0.55 Current Rating (mA)
MURATA 770-436-1300 MURATA 770-436-1300
847-803-6100 847-803-6100
MURATA 770-436-1300 847-803-6100
LQH32CN100K11 (10µH) NLC453232T-100K (10µH)
Current Program
Diode Selection
schottky diode with forward drop fast switching speed ideally used here achieve high efficiency. selecting Schottky diode, current rating schottky diode should larger than peak inductor current. Moreover, reverse breakdown voltage schottky diode should larger than output voltage.
white LEDs application, SP6691 generally programmed current source. bias resistor shown typical application circuit used operating current white using equation:
where feedback voltage (1.22V), operating current White LEDs. order achieve accurate current,
Jun26-07
Micro Power Boost Regulator Series White Driver
2007 Sipex Corporation
APPLICATION INFORMATION: Continued precision resistors recommended. Table below shows selection different white currents. example, operating current 20mA, selected 60.4 shown schematic. Table Bias Resistor Selection (mA)
Output Voltage Program
Table Divider Resistor Selection VOUT
Brightness Control
113K 88.7K 73.2K 61.9K 42.2K
80.6 60.4
SP6691 programmed either voltage source current source. program SP6691 voltage source, SP6691 requires feedback resistors control output voltage. shown Figure
Dimming control achieved applying control signal SHDN pin. brightness white LEDs controlled increasing decreasing duty cycle signal. duty cycle corresponds zero current 100% duty cycle corresponds full load current. While operating frequency range control from 60Hz 700Hz, recommended maximum brightness frequency range signal from 60Hz 200Hz. repetition rate least 60Hz required prevent flicker. magnitude signal should higher than minimum SHDN voltage high.
Open Circuit Protection
VOUT
SP6691
SHDN
1.22V
Figure Using SP6691 Voltage Source
When white inside white module fails module disconnected from circuit, output feedback control will open, thus resulting high output voltage, which cause voltage exceed maximum rating. this case, zener diode used output limit voltage protect part. zener voltage should larger than maximum forward voltage White module.
formula table resistor selection shown below: VOUT 1.22
Micro Power Boost Regulator Series White Driver 2007 Sipex Corporation
Jun26-07
APPLICATION INFORMATION
Layout Consideration
Both input capacitor output capacitor should placed close possible This reduce copper trace resistance which directly effects input output ripples. feedback resistor network should kept close minimize copper trace connections that inject noise into system. ground connection feedback resistor network should connect directly analog ground plane that tied directly pin. inductor schottky diode should placed close possible switch minimize noise coupling other circuits, especially feedback network.
Power Efficiency
2.7-4.2V
Murata LQH32CN100K11 10uH 0.45A
MBR0530
4.7uF
2.2uF
150Kohm
SP6691
WLED MODULE
0.7V
DIODE
SHDN
1.22V
34.8ohm
Figure Improve Efficiency with Diode Feedback Loop
typical application circuit, output efficiency circuit expressed VOUT IOUT
further improve efficiency reduce effects ambient temperature diode used method circuit used shown Figure gain circuit calculated
Where IIN, VOUT, IOUT input output voltage current respectively. While white efficiency expressed (VOUT 1.22) IOUT
voltage across bias resistor 0.1V current through around 100µA, selected 11.2K respectively. LMV341 used because small supply current, offset voltage minimum supply voltage. using this method, efficiency increased around
Vbattery
This equation indicates that white efficiency will much smaller than output efficiency circuit when VOUT very large, compared feedback voltage (1.22V). other power consumed bias resistor. reduce this power loss, circuits used, shown Figure Figure Figure general-purpose diode (for example, 1N4148) used bring voltage across bias resistor around 0.7V. used create loop that provides around 100µA operating current diode. efficiency improvement achieved using this method.
Jun26-07
2.7-4.2V
Murata LQH32CN100K11 10uH 0.45A
MBR0530
Vbattery
4.7uF
SP6691
2.2uF
WLED MODULE
LMV341
0.1V
SHDN
1.22V
11.2K
Figure Improve Efficiency with Feedback Loop
2007 Sipex Corporation
Micro Power Boost Regulator Series White Driver
PACKAGE: PINOUTS
SHDN
SHDN
SP6691
SOT-23
SP6691
TSOT
SHDN
SP6691
Jun26-07
Micro Power Boost Regulator Series White Driver
2007 Sipex Corporation
Appendix Link Information
further assistance: Email: Support page: Sipex Application Notes: Product Change Notices: Sipexsupport@sipex.com
Sipex Corporation
Headquarters Sales Office South Hillview Drive Milpitas, CA95035 tel: (408) 934-7500 faX: (408) 935-7600
Sipex Corporation reserves right make changes products described herein. Sipex does assume liability arising application product circuit described herein; neither does convey license under patent rights rights others.
following sections contain information which more changeable nature therefore generated appendices. Package Outline Drawings Ordering Information Available: Frequently Asked Questions Evaluation Board Manuals Reliability Reports Product Characterization Reports Application Notes this product Design Solutions this product
Datasheet Appendix Link Information
2007 Sipex Corporation
Ordering Information
Part Number
SP6691EB SP6691ER-L SP6691ER-L/TR SP6691EK-L SP6691EK-L/TR SP6691EK1-L SP6691EK1-L/TR SP6691ER SP6691EK SP6691EK/TR SP6691EK1 SP6691ER/TR SP6691EK1/TR
Status
Active Active Active Active Active Active Active
RoHS Temp Temp
Level Board
Pack Type Eval Board. Available Bulk Available Bulk Tape Reel Available Bulk Tape Reel Available Bulk Tape Reel Available Bulk Available Bulk Tape Reel Available Bulk Tape Reel Tape Reel
Quantity
Package Board DFN8 DFN8 SOT-23-5 SOT-23-5 TSOT5 TSOT5 DFN8 SOT-23-5 SOT-23-5 TSOT5 DFN8 TSOT5
3000 3000 2500 2500 2500 2500 3000 2500 2500 2500 3000 2500
Product Characterization Report
SP6690 Family Products
SP4446, SP6690, SP6691 Products
Prepared Salvador Greg West Date: January 2007
SP6690 Product Family Characterization Report
Table Contents
Section Introduction Characterization Procedure Data Summary Parameters Conclusions Data Histograms Page Appendix
Page 2/23/2007
SP6690 Product Family Characterization Report
Introduction: This product family characterization done part qualification Sipex's fabrication site transfer from Sipex's Hillview Milpitas, contract foundry, Silan, Hangzhou, China. This characterization report summarizes data SP6690 product family characteristics contains distributions parameters. complete listing product numbers covered characterization report included "Conclusion" section this report. distributions Appendix arranged that Hillview Silan distributions given parameter adjacent. distribution given parameter shows different temperature data which Wafer Fab: Silan Location: Hangzhou, China Process: Silan 1136 Characterization Procedure: Hillview number(s): HV6690CHAR Silan number(s): 10028 Temperatures: Ambient (25C), 85C, -40C Tester: Test Program: SP6690_QUAL_SILAN_00.08/30/2006
Page 2/23/2007
SP6690 Product Family Characterization Report
Data Summary: Parameter Across Temperature Data Summary
Parameter Units Hillview Distribution Mean Hillview Distribution Variance Hillview (across temp) Silan Distribution Mean Silan Distribution Variance Silan (across temp)
10.0: input current Ivfb, Vin=3.3V, Vfb=1.2V -40C 14.0: current, Ven=0V, Vin=3.3 15.0: Shutdown high threshold gono-go Vsdhdn=0.8 16.0: Shutdown threshold gono-go Vshdn=0.3 -40C 17.0: Shutdown input current, Vshdn=5V, Vin=3.3. 18.0: posttrim rising threshold Vin=3.3 -40C 20.0: rising threshold, Vin=1.2 -40C 22.0: current 25.0: line regulation, Vin=1.2, Vin=14 31.0: Current limit post trim, Vin=3.3 34.0: Vcesat Isw=250ma Vin=3.3 35.0: leakage current Vsw=5v Vin=3.3
12.488
35.959
0.1065
30.125
13.759
0.7056
124.000 90.805 1.5565 177.333 201.716 0.7888
6.107
258.049E-03
>4.0000
3.294
160.621E-03
>4.0000
-23.500
3.998
>4.0000
9.333
1.988
>4.0000
5.366
58.160E-03
>4.0000
3.956
64.887E-03
>4.0000
1.232 8.063E-03 0.7496 1.234 8.247E-03 1.4619
1.232 8.038E-03 178.846 0.7492 -0.0430 1.236 332.921 7.772E-03 467.917 1.4696 -0.2158
53.046
-107.367
14.114E
1.7154
-143.645
21.476
0.5643
410.152 16.929 0.6862 303.896 7.978 1.9264
148.600 3.013 >4.0000 147.333 2.249 >4.0000
326.667 63.427 >4.0000 408.710 97.459 >4.0000
Page 2/23/2007
SP6690 Product Family Characterization Report
Conclusion: Characterization data over temperature range show datasheet parameters meet spec. Cpk's most parameters comparable between Hillview Silan although many show strong temperature dependence that tends produce lower Cpk's this analysis. performance SP6690 parts fabricated Silan comparable current SP6690 parts built from Hillview fab. This characterization report applies following SP6690 family product part numbers:
SP4446EK SP4446EK-L SP6690EK SP6690EK1 SP6690EK1-L SP6690EK-L SP6690ER SP6690ER-L SP6691EK SP6691EK1 SP6691EK1-L SP6691EK-L SP6691ER SP6691ER-L
Page 2/23/2007
SP6690 Product Family Characterization Report
This page intentionally left blank.
Page 2/23/2007
SP6690 Product Family Characterization Report
Appendix Characterization Data Histograms
Page 2/23/2007
-40CCHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -427.814E-03 0.7888
-820.000E-03 420.000E-03 177.333E-03 201.716E-03 180.000E-03 782.480E-03
290.000E-03 1.240 1.0741 0.7888 1.3594
-4.3856
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028co MS1136 ldN40:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
Temp
-40C Data: Data
Report generated
ColdHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -148.414E-03 1.5565
30.000E-03 410.000E-03 124.000E-03 90.805E-03 40.000E-03 396.414E-03
240.000E-03 380.000E-03 >4.0000 1.5565 >4.0000
1.2350
Attributes
Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HV6690CHARc MS1136EW old:
SP6690
char
Silan
26-SEP-2006 ETS500D
SP6690_QUAL_SIL AN_00.08/30/2006
Conditions
temp
-40C Data: Data
Report generated
-40CCHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
6.000E-03 13.000E-03 9.333E-03 1.988E-03 8.000E-03 15.299E-03 3.368E-03 >4.0000 -0.2151
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
12.000E-03 7.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028co MS1136 ldN40:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
Temp
-40C Data: Data
Report generated
ColdHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
-29.000E-03 -7.000E-03 -23.500E-03 3.998E-03 -25.000E-03 -11.506E-03 -35.494E-03 >4.0000 2.4701
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
-20.500E-03 22.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HV6690CHARc MS1136EW old:
SP6690
char
Silan
26-SEP-2006 ETS500D
SP6690_QUAL_SIL AN_00.08/30/2006
Conditions
temp
-40C Data: Data
Report generated
-40CCHistogram: Test.Number=18.0, Test.Name=Vfb posttrim rising threshold Vin=3.3
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
1.217 1.254 1.234 8.247E-03 1.229 1.259 1.209 1.4619 0.5002
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.244 37.000E-03 2.0210 2.5802 1.4619
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028co MS1136 ldN40:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
Temp
-40C Data: Data
Report generated
ColdHistogram: Test.Number=18.0, Test.Name=Vfb posttrim rising threshold Vin=3.3
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
1.218 1.249 1.232 8.063E-03 1.227 1.256 1.208 0.7496 0.3036
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.243 31.000E-03 1.2402 1.7308 0.7496
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HV6690CHARc MS1136EW old:
SP6690
char
Silan
26-SEP-2006 ETS500D
SP6690_QUAL_SIL AN_00.08/30/2006
Conditions
temp
-40C Data: Data
Report generated
-40CCHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
170.000E-03 290.000E-03 223.667E-03 36.529E-03 190.000E-03 333.254E-03 114.080E-03 >4.0000 0.1621
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
275.000E-03 120.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028co MS1136 ldN40:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
Temp
-40C Data: Data
Report generated
ColdHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -785.239E-03 1.2630
-390.000E-03 560.000E-03 31.333E-03 272.191E-03 -190.000E-03 847.906E-03
425.000E-03 950.000E-03 3.0616 1.2630 >4.0000
0.2330
Attributes
Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HV6690CHARc MS1136EW old:
SP6690
char
Silan
26-SEP-2006 ETS500D
SP6690_QUAL_SIL AN_00.08/30/2006
Conditions
temp
-40C Data: Data
Report generated
85CHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
190.000E-03 290.000E-03 230.968E-03 24.543E-03 210.000E-03 304.597E-03 157.338E-03 >4.0000 0.3869
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
260.000E-03 100.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
210.000E-03 290.000E-03 246.667E-03 19.357E-03 230.000E-03 304.739E-03 188.594E-03 >4.0000 0.0498
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
270.000E-03 80.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=15.0, Test.Name=Shutdown high threshold go-no-go Vshdn=0.8
section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
6.303 7.183 6.804 233.412E-03 6.601 7.504 6.103 >4.0000 -0.3847
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
7.074 880.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=15.0, Test.Name=Shutdown high threshold go-no-go Vshdn=0.8
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
7.796 8.417 8.090 148.215E-03 8.000 8.535 7.646 >4.0000 0.0774
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
8.272 621.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
9.000E-03 15.000E-03 12.226E-03 1.647E-03 11.000E-03 17.168E-03 7.284E-03 >4.0000 -0.1953
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
14.000E-03 6.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
10.000E-03 17.000E-03 12.800E-03 1.769E-03 12.000E-03 18.108E-03 7.492E-03 >4.0000 0.4849
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
15.500E-03 7.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=17.0, Test.Name=Shutdown input current,Vshdn=5v,Vin=3.3
section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
3.770 4.060 3.956 64.887E-03 3.930 4.151 3.762 >4.0000 -0.8190
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
4.030 290.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=17.0, Test.Name=Shutdown input current,Vshdn=5v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
5.260 5.480 5.366 58.160E-03 5.320 5.541 5.192 >4.0000 0.4409
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
5.455 220.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=25.0, Test.Name=Vfb line regulation, Vin=1.2 Vin=14
section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -208.074E-03 0.5643
-174.000E-03 -81.000E-03 -143.645E-03 21.476E-03 -159.000E-03 -79.216E-03
-111.000E-03 93.000E-03 2.7938 0.5643 >4.0000
0.9454
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=25.0, Test.Name=Vfb line regulation, Vin=1.2 Vin=14
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -149.709E-03 1.7154
-136.000E-03 -80.000E-03 -107.367E-03 14.114E-03 -116.000E-03 -65.025E-03
-90.000E-03 56.000E-03 >4.0000 1.7154 >4.0000
-0.0146
Attributes
Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=34.0, Test.Name=sw Vcesat Isw=250ma Vin=3.3
section
Statistics: (mV)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
158.000 167.000 162.806 1.778 161.000 168.140 157.472 >4.0000 -0.2200
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
165.000 9.000 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=34.0, Test.Name=sw Vcesat Isw=250ma Vin=3.3
Section
Statistics: (mV)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
154.000 166.000 161.400 3.663 159.000 172.390 150.410 >4.0000 -0.7582
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
165.000 12.000 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
85CHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
230.000E-03 750.000E-03 408.710E-03 97.459E-03 360.000E-03 701.087E-03 116.332E-03 >4.0000 1.2682
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
510.000E-03 520.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
silanca10028h MS1136 ot85:
SP6690
char
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
85CHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
200.000E-03 460.000E-03 326.667E-03 63.427E-03 290.000E-03 516.948E-03 136.386E-03 >4.0000 0.3370
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
435.000E-03 260.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
HVA98662CHAR MS1136 _HOT:
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
Temp
Data: Data
Report generated
roomHistogram: Test.Number=10.0, Test.Name=Vfb input current Ivfb, Vin=3.3v, Vfb=1.2v
Section
Statistics: (nA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
28.430 33.530 32.096 1.100 31.330 35.396 28.797 >4.0000 -1.4342
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
33.405 5.100 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=10.0, Test.Name=Vfb input current Ivfb, Vin=3.3v, Vfb=1.2v
section4
Statistics: (nA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
31.340 42.150 35.573 1.897 34.860 41.264 29.883 >4.0000 0.8536
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
37.020 10.810 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
160.000E-03 290.000E-03 243.667E-03 28.221E-03 230.000E-03 328.330E-03 159.003E-03 >4.0000 -0.7866
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
280.000E-03 130.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=14.0, Test.Name=Vin current, Ven=0v,Vin=3.3
section4
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
210.000E-03 320.000E-03 252.000E-03 25.918E-03 230.000E-03 329.753E-03 174.247E-03 >4.0000 0.4263
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
285.000E-03 110.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=15.0, Test.Name=Shutdown high threshold go-no-go Vshdn=0.8
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
2.934 3.622 3.294 160.621E-03 3.181 3.776 2.812 >4.0000 -0.0507
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
3.526 688.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=15.0, Test.Name=Shutdown high threshold go-no-go Vshdn=0.8
section4
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
5.696 6.822 6.107 258.049E-03 6.009 6.882 5.333 >4.0000 1.0104
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
6.401 1.126 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
Section
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
7.000E-03 19.000E-03 14.367E-03 2.822E-03 12.000E-03 22.833E-03 5.900E-03 >4.0000 -0.7077
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
17.500E-03 12.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=16.0, Test.Name=Shutdown threshold go-no-go Vshdn=0.3
section4
Statistics: (mA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
10.000E-03 19.000E-03 13.633E-03 2.076E-03 12.000E-03 19.861E-03 7.406E-03 >4.0000 0.4789
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
16.000E-03 9.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=17.0, Test.Name=Shutdown input current,Vshdn=5v,Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
4.080 4.410 4.269 76.309E-03 4.230 4.498 4.040 >4.0000 -0.2844
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
4.375 330.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=17.0, Test.Name=Shutdown input current,Vshdn=5v,Vin=3.3
section4
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
5.540 5.810 5.632 73.597E-03 5.580 5.853 5.411 >4.0000 0.9403
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
5.750 270.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=18.0, Test.Name=Vfb posttrim rising threshold Vin=3.3
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
1.211 1.241 1.224 5.986E-03 1.221 1.242 1.206 2.5636 0.8871
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.232 30.000E-03 2.7845 3.0054 2.5636
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=18.0, Test.Name=Vfb posttrim rising threshold Vin=3.3
section4
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
1.212 1.232 1.223 5.735E-03 1.217 1.240 1.206 1.5731 -0.4331
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.228 20.000E-03 1.7436 1.9141 1.5731
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=20.0, Test.Name=Vfb rising threshold,Vin=1.2
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
1.214 1.242 1.227 5.786E-03 1.224 1.245 1.210 2.4560 0.5316
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.235 28.000E-03 2.8804 3.3047 2.4560
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=20.0, Test.Name=Vfb rising threshold,Vin=1.2
section4
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
1.213 1.234 1.225 5.771E-03 1.219 1.242 1.208 1.4478 -0.5134
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
1.231 21.000E-03 2.0216 2.5953 1.4478
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=22.0, Test.Name=Vin current
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
14.800 15.780 15.452 230.981E-03 15.330 16.145 14.759 >4.0000 -0.7060
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
15.740 980.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=22.0, Test.Name=Vin current
section4
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
20.210 21.440 20.796 309.322E-03 20.570 21.724 19.868 >4.0000 0.5751
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
21.295 1.230 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=25.0, Test.Name=Vfb line regulation, Vin=1.2 Vin=14
Section
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec -122.581E-03 2.4103
-105.000E-03 -38.000E-03 -81.867E-03 13.572E-03 -89.000E-03 -41.152E-03
-65.500E-03 67.000E-03 >4.0000 2.4103 >4.0000
0.9609
Attributes
Operation Foundry Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=25.0, Test.Name=Vfb line regulation, Vin=1.2 Vin=14
section4
Statistics:
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
-67.000E-03 -28.000E-03 -47.767E-03 11.676E-03 -59.000E-03 -12.739E-03 -82.794E-03 3.7752 -0.1162
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
-36.500E-03 39.000E-03 >4.0000 3.7752 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=34.0, Test.Name=sw Vcesat Isw=250ma Vin=3.3
Section
Statistics: (mV)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
143.000 152.000 147.333 2.249 146.000 154.080 140.587 >4.0000 -0.1747
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
149.500 9.000 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=34.0, Test.Name=sw Vcesat Isw=250ma Vin=3.3
section4
Statistics: (mV)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
143.000 154.000 148.600 3.013 147.000 157.638 139.562 >4.0000 -0.3976
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
152.000 11.000 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
roomHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
Section
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device Device
110.000E-03 240.000E-03 165.667E-03 33.598E-03 140.000E-03 266.462E-03 64.872E-03 >4.0000 0.3867
Foundry
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
215.000E-03 130.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Operation Process Date Tested Tester Test Program Sequence Retest
SILANCA10028C HARROOM:
MS1136
SP6690
char
Hillview
06-NOV2006
ETS500D
SP6690_SINGLE_F T_00.11/06/2006
Conditions
TEMP
Data: Data
Report generated
roomHistogram: Test.Number=35.0, Test.Name=sw leakage current Vsw=5v Vin=3.3
section4
Statistics: (uA)
Mean StdDev Mean+3*StdD Mean3*StdDev Skew StatHigh
Lot: Wafers Maskset Device
120.000E-03 240.000E-03 178.667E-03 31.484E-03 150.000E-03 273.120E-03 84.214E-03 >4.0000 0.1670
StatLow NWithinSpec NOutsideSpec Range NOutsideSpec
225.000E-03 120.000E-03 >4.0000 >4.0000 >4.0000
Attributes
Device Operation Foundry Process Date Tested Tester Test Program Sequence Retest
HVA98662RO MS1136
SP6690
CHAR
Hillview
06-NOV2006
ETS500D SP6690_SINGLE _FT_00.11/06/200
Conditions
temp
Data: Data
Report generated
Reliability Qualification Report
Silan Process Reliability Qualification using SPX1117
Prepared Salvador Greg West Engineering Date: September 2006
Reviewed Fred Claussen Quality Reliability Date: September 2006
SPX1117 Reliability Report
Page
Table Contents Title Page Table Contents Device Description Manufacturing Information Package Information Reliability Test Summary Life Test Data Data Calculations MTBF Data Calculations Free Package Qualification Addendum Device Description: SPX1117 power positive-voltage regulator designed satisfy moderate power requirements with cost effective, small footprint solution. This device excellent choice battery-powered applications portable computers. SPX1117 features very quiescent current dropout voltage 1.1V full load. output current decreases, quiescent current flows into load, increasing efficiency. SPX1117 available adjustable fixed 1.5V, 1.8V, 2.5V,2.5V, 2.85V, 3.0V, 3.3V output voltages. SPX1117 offered several 3-pin surface mount packages: SOT-223, TO-252, TO-220 TO-263. output capacitor 10µF provides unconditional stability while smaller 2.2µF capacitor sufficient most applications. Manufacturing Information: Product: SPX1117 Products Description: 800mA Mask Set: MS1557 Number(s): SPXBP10C010TC, SPXBP1C011TC, SPXBP1C014TC Process: silan-bp1 Wafer Fab: Silan Package Information: Package Type: Package Code:: JEDEC
SPX1117
SPX1117 Reliability Report
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Reliability Qualification Test Summary:
Stress Level 168Hrs 168Hrs 168Hrs 1000Hrs 1000Hrs 1000Hrs Life Test Life testing conducted determine there fundamental reliability related failure mechanism(s) present device. These failure mechanisms divided roughly into four groups: Process related failures such oxide defects, metallization defects, diffusion defects. Assembly related failures such chip mount defects, wire bond defects, molding defects, trim/form/singulation defects. Design related defects. Miscellaneous, undetermined, application induced failures. 125C Operating Life Test Results part Sipex design qualification program, Product/Reliability Engineering group subjected parts hours 1000 hours 125° life stress testing. Hour Timepoint parts were subjected life test profile completed stress with failures. 1000 Hour Timepoint parts were reintroduced life stress testing, completing 1000 hour HTOL time point without failures significant shifts process parameters Rate Calculations rate (failures time) predicted number failures billion device hours. This predicted value based upon,
SPX1117 Reliability Report Page
Device SPX1117 SPX1117 SPX1117 SPX1117 SPX1117 SPX1117
Number Burn-In Temp Sample Size Fail
SPXBP10C0 10TC SPXBP1C01 SPXBP1C01 SPXBP10C0 10TC SPXBP1C01 SPXBP1C01
Life Test conditions summarized HTOL table (time/temperature, device quantity, failure quantity). Activation Energy (Ea) potential failure modes. weighted Activation Energy(Ea) observed failure mechanisms Sipex products been determined 0.8eV. Based above criteria SPX1117 product rates 25°, 55°, 70°C operation confidence levels have been calculated listed below. Failure Rates: SPX1117 Silan Process Confidence Level +25°C Failure Billion Device-Hours MTBF Calculation: SPX1117 Silan Process Confidence Level Testing Human Body Model units were subjected Human Body Model testing 2KV. units passed. Machine Model units were subjected Human Body Model testing +/200V. units passed. Early Life Failure Rate Testing Early Life Test units were subject Early Life test. units passed +25°C 5.37E+08 2.21E+08 +55°C 3.48E+07 1.43E+07 +70°C 1.06E+07 4.36E+06 +55°C 28.7 69.8 +70°C 94.5 229.6
Additional Reliability Tests
units were placed Unbiased HAST testing, units were placed Thermal Shock testing, -65C/+150C Temperature Cycle testing. units passed testing summarized following table. Test TEMP. Cycles HAST Unbiased Thermal Shock Condition -65C/+150C 130C/85%RH -65C/+150C Time Cycles 96hrs Cycles Sample Size rejects
SPX1117 Reliability Report
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Design Solution
SP6691 Cell Alkaline WLEDs with IOUT 20mA
Date: June 2006 Designed Brian Kennedy Part Number: SP6691EK Application Description: Cell Boost 20mA Electrical Requirements: Input Voltage Output Voltage Output Current Circuit Description: This application been designed cell alkaline battery inputs with outputs driving White LEDs that require improved efficiency, small size moderate output ripple. input voltage range from 1.8V 3.2V boosted output. external components have been optimized output current approximately 20mA have been laid optimize small size increase efficiency. This report includes application schematic complete with component part numbers figures illustrating electrical performance design.
1.8V 3.2V
4.7uF 130K
4148
1.8V 3.2V 20mA
22uH muRat LQH32CN220K21
MBR0530
Vout 4.7uF
SP6691
Vref
Application Schematic
Jul3-06
Design Solution Page
Sipex Corporation
Efficiency
Output Current (mA)
Output Current
Efficiency
Figure Efficiency Graph
Figure VOUT Regulation Graph
Vout Ripple
Vout Ripple
200mA/div
200mA/div
Vin=3.2V, VF=13V
Vin=3.2V, VF=14V
Figure Output Ripple
Figure Output Ripple
Vout Ripple
Vout Ripple
200mA/div
200mA/div
Vin=2.6V, VF=13V
Vin=2.6V, VF=14V
Figure Output Ripple
Figure Output Ripple
Jul3-06
Design Solution Page
Sipex Corporation
Vout Ripple
Vout Ripple
200mA/div
200mA/div
Vin=1.9V, VF=13V
Vin=2.0V, VF=14V
Figure Output Ripple
Figure Output Ripple
Vout Ripple
200mA/div
Vin=1.8V, VF=13V
Figure Output Ripple
Jul3-06
Design Solution Page
Sipex Corporation
Design Solution
High Voltage Boost Regulator with Voltage Doubler
Date: Sept 2006 Designed Matthew Szaniawski (mszaniawski@sipex.com) Part Number: SP6691 Application Description: High voltage boost regulator with charge pump voltage doubler Electrical Requirements: Input Voltage Output Voltage 1/2VOUT (also available) Output Current Circuit Description: This circuit been designed provide high output voltage with lower voltage boost regulator adding charge pump circuit. This circuit take standard boost regulator make boost regulator needed. testing done VOUT demonstrate circuit operation. other benefit this circuit that voltage capacitor roughly VOUT. This report includes application schematic, complete Bill materials figures through illustrating electrical performance design.
Schematic SP6691@ 43VOUT
Sept19-06
Design Solution
Page
Sipex Corporation
Figure Typical VOUT Ripple 2VIN 43VOUT
Figure Typical VOUT Ripple 3VIN 43VOUT
Figure Switch node pin1 heavy load
Figure Switch node load
Sept19-06
Design Solution
Page
Sipex Corporation
Maximum Output Current
Vout 0.21 0.41 0.83 1.68 1.89 Iout 2.13 2.98 Series1
Figure Maximum output current 1VIN
Maximum Output Current
0.21 0.42 0.84 1.69
Vout
Series1
Iout
Figure Maximum output current 2VIN
Maximum Output Current
43.5 42.5 41.5 40.5 0.21 0.42 0.84 Iout
Vout
Series1
Figure Maximum output current 3VIN
Sept19-06
Design Solution
Page
Sipex Corporation
Evaluation List Materials
3/3/2006
Line
Ref. Des.
Qty.
Manuf.
Manuf. Part Number
Layout Size SOT-23-5 SOD-323 3.2X2.5X2mm 1206 SOT-23 0603 0603 1206
Component
Vendor Phone Number
Sipex Semi Murata Murata Murata Central Semi Panasonic Panasonic Murata
SP6691EK MBR530 LQH32CN100K21 GRM43ER71H225K GRM1885C1H560JA01B BAT54C ERJ-3EKF1005V ERJ-3EKF2992V GRM32RR71E225KC01B
Boost regulator Schottky Diode 10uH Inductor 2.2uF Ceramic 56pF Capacitor Dual Diode Schottky Thick Film 29.9K Thick Film 1%Res 4.7uF capacitor
978-667-7800
770-436-1300 770-436-1300 770-436-1300
800-344-4539 800-344-4539 770-436-1300
Figure Bill Materials
Sept19-06
Design Solution
Page
Sipex Corporation
Design Solution
SP6691 input output 40mA
Designed Brian Kennedy Part Number: SP6691EK Application Description: input output 40mA Electrical Requirements: Input Voltage Output Voltage Output Current 40mA
Circuit Description: This application been designed input output about 40mA load with output ripple. SP6691 DC/DC switching regulator that boost from input high 13.5V output 30V, using 10uH inductor internal charge switch, external schottky diode relatively small input output capacitors. SP6691 uses Pulse Frequency Modulation (PFM) control 20uA quiescent current simple comparator driven voltage mode output control that work with ceramic, tantalum electrolytic capacitors without external compensation components needed. results were relatively output ripple large output level, which very useful tuner other noise applications. lower ripple, additional 3.3uF ceramic capacitor added output cost more concern than size, 22uF electrolytic added. This report includes data figures showing input output ripple various output capacitors added well efficiency data BOM. Schematic:
April 16-07
SP6691 Design Solution Page
2007 Sipex Corporation
Vout Iout Ripple Effi (mA) (mA) (mV) 12.0 3.28 30.56 1.00 77.6 12.0 32.13 30.79 10.00 79.9 12.0 64.30 30.92 20.00 80.1 12.0 30.95 30.03 81.5 12.0 30.71 40.00 81.2
Table Ripple Efficiency Data
Efficiency Output current Output Current
Ripple
Efficiency
Vout Ripple
Iout=25mA, Cout=3.3uF Ceramic
Figure Efficiency Curve
Figure Ripple with 25mA load
Ripple Vout Ripple
Ripple Vout Ripple
200mA/div Iout=40mA
200mA/div
Iout=30mA
Figure Ripple with 30mA Load
Figure Ripple with 40mA Load
April 16-07
SP6691 Design Solution Page
2007 Sipex Corporation
Ripple
Vout Ripple
Iout=25mA, Cout 3.3uF Ceramic
Figure Ripple with Cout parallel 3.3uF Cer.
Ripple
Vout Ripple
Iout=25mA, Cout=1uF 22uF Alu.
Figure Ripple with Cout cer. parallel with 22uF Aluminum Electrolytic Table
SP6691 Evaluation Board Rev. List Materials Line Ref. Des. COUT COUT COUT Sipex Semi Murata Murata Murata Qty. Manuf. Manuf. Part Number SP6691EK MBR540 LQH32CN100K21 Layout Size SOT-23-5 SOD-323 3.2x2.5x1.55mm 0805 0603 0603 1210 1206 Boost regulator Schottky Diode 0.5A 10uH Inductor 4.7uF Ceramic 47pF Capacitor Thick Film 42.2K Thick Film 1%Res 3.3uF 22uF Component 3/23/07 Vendor Phone Number 408-9347500 770-4361300 770-4361300 770-4361300
April 16-07
SP6691 Design Solution Page
2007 Sipex Corporation
further assistance: Email: Support page: Sipex Application Notes: Sipexsupport@sipex.com
Sipex Corporation
Headquarters Sales Office South Hillview Drive Milpitas, CA95035 tel: (408) 934-7500 faX: (408) 935-7600
Sipex Corporation reserves right make changes products described herein. Sipex does assume liability arising application product circuit described herein; neither does convey license under patent rights rights others.
April 16-07
SP6691 Design Solution Page
2007 Sipex Corporation
Design Solution
SP6136: input 3.3V output
Designed Shahin Maloyan Part Number: SP6136ER1 Application Description: input 3.3V output 15mA Electrical Requirements: Input Voltage Output Voltage Output Current Step Load 3.3V 60mV response step
Circuit Description: This buck converter been designed provide 3.3V output with 60mV transient response step. SP6136 high performance buck regulator controller that provides necessary functions required buck regulator: over-current protection, power-good output, adjustable UVLO Enable input. High switching frequency (600kHz) minimizes solution cost size. This report includes application schematic complete with component part numbers figures illustrating electrical performance design. Schematic:
VIN1
VCC1
22uF
22uF
22uF
10V-14V
0.1uF
DBST BAT54WS
GIN1
SI4394DY
UVIN
CVCC 4.7uF,
CBST 0.1uF 0.1uF 6.8nF
GND1
PGND
PWRGD
DIEPAD COMP
SP6136
SI4304DY
Rsnb Inter-technical, SC5015-R67M Csnb 2.2nF 0.67uH, 1.28 mOhm,
47nF
100K
649K 5.11k 5.11k
UVIN1
PWRGD1
100uF 100uF 22uF 22uF 22uF
3.3V 0-15A
10.0k,1% 54.9K 0.01uF
PTC36SAAN
180pF
1.5K,
270pF 100pF
45.3k,1%
68.1k,1%
21.5k,1%
Title Size Date:
<Title> Document Number <Doc> Thursday March 2007 Sheet <Rev Code>
April 13-07
SP6136 Design Solution Page
2007 Sipex Corporation
12.000 12.000 12.000 12.000 12.000 12.000 12.000 12.000 12.000 12.000 12.000 12.000
0.098 0.240 0.383 0.672 1.254 1.835 2.422 3.019 3.324 3.630 4.247 4.562
Vout 3.335 3.335 3.335 3.335 3.335 3.335 3.336 3.336 3.336 3.336 3.337 3.337
Iout
Efficiency(%) 57.9 72.5 82.7 88.6 90.8 91.8 91.9 91.6 91.4
Table Efficiency regulation Data
Figure Hiccup Overcurrent Ch1: Vin, ch2: Vout, ch3: Iout
Figure 60mV response 0-15A Step Ch1: Vin, ch2: Vout, ch3: Iout
April 13-07
SP6136 Design Solution Page
2007 Sipex Corporation
Figure Startup Load Ch1: Vin, ch2: Vout, ch3: Iout
Figure Startup Ch1: Vin, ch2: Vout, ch3: Iout
April 13-07
SP6136 Design Solution Page
2007 Sipex Corporation
Circuit Schematic
April 13-07
SP6136 Design Solution Page
2007 Sipex Corporation
further assistance: Email: Support page: Sipex Application Notes: Sipexsupport@sipex.com
Sipex Corporation
Headquarters Sales Office South Hillview Drive Milpitas, CA95035 tel: (408) 934-7500 faX: (408) 935-7600
Sipex Corporation reserves right make changes products described herein. Sipex does assume liability arising application product circuit described herein; neither does convey license under patent rights rights others.
April 13-07
SP6136 Design Solution Page
2007 Sipex Corporation
SP6691EB Evaluation Board Manual
Ideal series white driver High output voltage, quiescent current: 20uA Ultra shutdown current: 10nA High Efficiency: SOT23-5 Package components small, profile Power Supply
DESCRIPTION BOARD SCHEMATIC SP6691EB Evaluation Board designed help user evaluate performance SP6691EB series white driver. evaluation board completely assembled tested surface mount board which provides easy probe access points SP6691EB Inputs Outputs that user quickly connect measure electrical characteristics waveforms.
SP6691
Date: 01/26/05
SP6691EB Evaluation Board Manual
Copyright 2005 Sipex Corporation
USING EVALUATION BOARD Powering SP6691EB Circuit SP6691EB Evaluation Board powered from inputs from +1.2V +5.0V. Connect with short leads directly "VIN" "GND" posts. Monitor Output Voltage connect Load between "VOUT" post "GND" post. Using Jumper: Enabling SP6691EB Output using Shutdown Mode SP6691EB output will enabled Jumper bottom position. position, Shutdown brought GND, which puts SP6691EB quiescent Shutdown Mode. Using Posts Since part might damaged when output open loop, divider resistors (R1=1M, R2=64.9K) used provide feedback loop output voltage. white LEDs application, these resistors (R1, need removed from evaluation board first avoid overvoltage then plug white module between "VOUT" "FB" posts. bias resistor should also installed board. Inductor Selection SP6691EB, internal switch will turned only after inductor current reaches typical current limit (ILIM=450mA). However, there typically propagation delay 200nS between time when current limit reached when switch actually turned off. During this 200nS delay, peak inductor current will increase, exceeding current limit small amount. peak inductor current estimated (max) 200nS larger input voltage lower inductor value, greater peak current. selecting inductor, saturation current specified inductor needs greater than SP6691EB peak current avoid saturating inductor, which would result loss efficiency could damage inductor. Choosing inductor with decreases power losses increase efficiency. Refer Table some suggested inductors. Table Suggested inductor
MANUFACTURE
PART NUMBER LQH32CN100K11 (10uH) NLC453232T-100K (22uH)
0.55
Current Rating (mA)
MURATA 770-436-1300 847-803-6100
Diode Selection schottky diode with forward drop fast switching speed ideally used here achieve high efficiency. selecting Schottky diode, current rating schottky diode should larger than peak inductor current. Moreover, reverse breakdown voltage schottky diode should larger than output voltage. Capacitor Selection Ceramic capacitors recommended their inherently ESR, which will help produce peak peak output ripple, reduce high frequency spikes. typical application, 4.7uF input capacitor 2.2uF output capacitor sufficient. input output ripple could further reduced increasing value input output capacitors. Place capacitors close SP6691EB possible layout. voltage source, reduce output ripple, small feedforward (47pF) across feedback resistor used provide sufficient overdrive error comparator, thus reducing output ripple. Refer Table some suggested capacitors.
Table Suggested capacitor
MANUFACTURE MURATA 770-436-1300 MURATA 770-436-1300 847-803-6100 847-803-6100 PART NUMBER GRM32RR71E 225KC01B GRM31CR61A 475KA01B C3225X7R1E 225M C3216X5R1A 475K /VOLTAGE 2.2uF /25V 4.7uF /10V 2.2uF /25V 4.7uF /10V SIZE /TYPE 1210 /X5R 1206 /X5R 1210 /X7R 1206 /X5R
Current Program white LEDs application, SP6691EB generally programmed current source. bias resistor used operating current white using equation: where feedback voltage (1.22V), operating current White LEDs. order achieve accurate current, precision resistors recommended. Table below shows selection different white currents. example, operating current 20mA, selected 60.4 Ohm, shown schematic. Table Bias Resistor Selection (mA) 80.6 60.4 Vout Programming SP6691EB programmed either voltage source current source. program SP6691 voltage source, SP6691 requires feedback resistors control output voltage. formula resistor selection shown below.
Open Circuit Protection When white inside white module fails module disconnected from circuit, output feedback control will open, thus resulting high output voltage, which cause voltage exceed maximum rating. this case, zener diode used output limit voltage protect part. zener voltage should larger than maximum forward voltage White module. Brightness Control Dimming control achieved applying control signal EN/PWM pin. brightness white LEDs controlled increasing decreasing duty cycle signal. duty cycle corresponds zero current 100% duty cycle corresponds full load current. While operating frequency range control from 60Hz 700Hz, recommended maximum brightness frequency range signal from 60Hz 200Hz. repetition rate least 60Hz required prevent flicker. magnitude signal should higher than minimum SHDN voltage high. Layout Consideration Both input capacitor output capacitor should placed close possible This reduce copper trace resistance which directly affects input output ripples. feedback resistor network should kept close minimize copper trace connections that inject noise into system. ground connection feedback resistor network should connect directly analog ground plane that tied directly pin. inductor schottky diode should placed close possible switch minimize noise coupling other circuits, especially feedback network.
1.22
POWER SUPPLY DATA standard evaluation board (4x20mA series white LEDs application), which output voltage around output current 20mA, power supply data provided Fig. white LEDs used here were from LUMEX (Part Number: SML-LX2832UWC-TR).
Average Output Current (mA)
Efficiency Input Voltage
Duty Cycle
Fig. Efficiency Input Voltage
Fig. Average SHDN duty cycle
(0.5A/DIV)
Vout
(AC)
Vout
(AC)
Fig. Typical Switching Waveform (Vin=3.3V)
Fig. Output Ripple (Vin=2.7V)
EVALUATION BOARD LAYOUT
FIGURE SP6691EB COMPONENT PLACEMENT
FIGURE SP6691EB LAYOUT SIDE
FIGURE SP6691EB LAYOUT BOTTOM SIDE
TABLE1: SP6691EB LIST MATERIALS
Ref. Des. SP6691 Evaluation Board List Materials Qty. Manufacturer Part Number Layout Size LxWxH Sipex Corp. 146-6512-00 1"x1.5" Sipex Corp. SP6691EK SOT23-5 Murata GRM31CR61A475KA01B 1206 Murata GRM32RR71E225KC01B 1210 Murata GRM1885C1H470JA01B Murata LQH32CN100K11 3.2X2.5X2mm Panasonic ERJ-3EKF1004 Panasonic ERJ-3EKF6492 Panasonic ERJ-3EKF60R4V On-Semi MBR-0530 SOD-123 SOD-123 Mill-Max 0300-115-01-4727100 .042 Sullins PTC36SAAN .23x.12 Component SP6690 Eval Board 5-pin SOT23 Step-Up DC/DC Conv Ceramic 4.7uF Ceramic 2.2uF Ceramic 47pF 10uH, 0.45A, Ohm, Inductor 1/16W 0603 64.9K 1/16W 0603 Open Schottky Diode 30V, 0.5A Open Test Point Female 2-Pin Header Vendor Sipex 978-667-8700 Sipex 978-667-8700 Murata 770-436-1300 Murata 770-436-1300 Murata 770-436-1300 Murata 770-436-1300 800-Digi-Key 800-Digi-Key 800-Digi-Key Onsemi 800-Digi-Key 800-Digi-Key
D1-D4
ORDERING INFORMATION Model Temperature Range Package Type
SP6691EB. -40°C +85°C.SP6691 Evaluation Board SP6691EU.-40°C +85°C.5-pin SOT-23
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