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Capable 1.5Watts Power Dissipation. Collector-current 500mA Collector-


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MPSA13 MPSA14
Capable 1.5Watts Power Dissipation. Collector-current 500mA Collector-base Voltage Operating storage junction temperature range: -55OC +150
Silicon Darlington Transistor
TO-92
Configuration Bottom View
Maximum Ratings
Symbol TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation =25OC Derate above 25OC Total Device Dissipation =25OC Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=100uAdc, Collector Cutoff Current (VCB=30Vdc, Emitter Cutoff Current =10Vdc, IC=0) Current Gain (IC=10mAdc, CE=5.0Vdc) Rating +150 +150 Unit Units nAdc nAdc
Electrical Characteristics 25OC Unless Otherwise Specified
CHARACTERISTICS
V(BR)CES ICBO IEBO
CHARACTERISTICS(1)
hFE(1) MPSA13 MPSA14 5000 10000 10000 20000
hFE(2)
VCE(sat) VBE(on)
Current Gain (IC=100mAdc, CE=5.0Vdc) MPSA MPSA14 Collector-Emitter Saturation Voltage (IC=100mAdc, =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, CE=5.0Vdc)
DIMENSIONS INCHES .170 .170 .550 .010 .130 .010 4.33 4.30 13.97 0.36 3.30 2.44
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product (IC=10mAdc, CE=5.0Vdc, f=100MHz) Pulse Test: Pulse Width<300us, Duty Cycle<2.0% =|hfe| ftest
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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MPSA13 thru MPSA14
IDEAL TRANSISTOR
Figure Transistor Noise Model
BANDWIDTH NOISE CURRENT (pA)
0.07 0.05 0.03 0.02
BANDWIDTH
NOISE VOLTAGE (nV)
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure Noise Voltage
Figure Noise Current
TOTAL WIDEBAND NOISE VOLTAGE (nV)
BANDWIDTH 15.7 NOISE FIGURE (dB)
SOURCE RESISTANCE 1000
BANDWIDTH 15.7
SOURCE RESISTANCE
1000
Figure Total Wideband Noise Voltage
Figure Wideband Noise Figure
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MPSA13 thru MPSA14
25°C SMALL-SIGNAL CURRENT GAIN 25°C
CAPACITANCE (pF)
Cibo Cobo
0.04
REVERSE VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure High Frequency Current Gain
125°C
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
hFE, CURRENT GAIN
25°C
-55°C
COLLECTOR CURRENT (mA)
BASE CURRENT (µA)
1000
Figure Current Gain
Figure Collector Saturation Region
TEMPERATURE COEFFICIENTS (mV/°C)
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB 1000 VBE(on)
-1.0 -2.0 -3.0
*APPLIES IC/IB hFE/3.0 *RqVC VCE(sat)
25°C 125°C
-55°C 25°C
25°C 125°C -4.0 -5.0 -6.0 -55°C 25°C
VCE(sat) IC/IB 1000 COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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MPSA13 thru MPSA14
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 SINGLE PULSE SINGLE PULSE ZJC(t) r(t) TJ(pk) P(pk) ZJC(t) ZJA(t) r(t) TJ(pk) P(pk) ZJA(t) TIME (ms)
0.07 0.05 0.03 0.02 0.01
Figure Thermal Response
COLLECTOR CURRENT (mA)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 25°C 25°C
FIGURE
DUTY CYCLE PEAK PULSE POWER
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Active Region Safe Operating Area
Design Note: Transient Thermal Resistance Data
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