This device designed applications requiring extremely high current gai
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MPSA12
This device designed applications requiring extremely high current gain current 1.0A
Darlington Transistor
TO-92
Configuration Bottom View
Maximum Ratings*
Symbol TSTG Symbol Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Parameter Collector-Emitter Breakdown Voltage (IC=100uAdc, Collector Cutoff Current CB=15Vdc, Emitter Cutoff Current =10Vdc, IC=0) Emitter Cutoff Current (VCB=15Vdc, IC=0) Rating +150 +150 83.3 Unit Unit mW/OC Units
Thermal Characteristics
Electrical Characteristics 25OC Unless Otherwise Specified
CHARACTERISTICS
(BR)CES ICBO ICES -100 nAdc nAdc nAdc
CHARACTERISTICS(3)
Current Gain CE=5.0Vdc, IC=10mAdc) 20000 -VCE(sat) Collector-Emitter Saturation Voltage C=10mAdc, =0.01mAdc) -1.0 VBE(on) Base-Emitter Voltage C=10mAdc, CE=5.0Vdc) -1.4 These ratings limiting values above which serviceability semiconductor device impaired. Notes: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
DIMENSIONS
INCHES .170 .170 .550 .010 .130 .010
.190 .190 .590 .020 .160 .104
4.33 4.30 13.97 0.36 3.30 2.44
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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