Simplifies Circuit Design Reduces Component Count Silicon Amplifi
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MPS918
Simplifies Circuit Design Reduces Component Count
Silicon Amplifier Transistor
Configuration Bottom View
Maximum Ratings
Symbol TSTG Symbol Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Total Device Dissipation Derate above Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Parameter Collector-Emitter Breakdown Voltage (IC=3.0mAdc, Collector-Base Breakdown Voltage (IC=1.0uAdc, Emitter-Base Breakdown Voltage =10uAdc, IC=0) Collector Cutoff Current (VCB=15Vdc, Rating +150 +150 0.85 Unit Unit mW/OC mW/OC Units
TO-92
Thermal Characteristics
Electrical Characteristics 25OC Unless Otherwise Specified
CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO nAdc
INCHES .170 .170 .550 .010 .130 .010
DIMENSIONS 4.33 4.30 13.97 0.36 3.30 2.44
CHARACTERISTICS
Current Gain CE=1.0Vdc, IC=3.0mAdc) -VCE(sat) Collector-Emitter Saturation Voltage (IC=10mAdc, =1.0mAdc) -0.4 VBE(sat) Base-Emitter Voltage (IC=10mAdc, =1.0mAdc) -1.0 measured with device soldered into typical printed circuit board. Pulse Test: Pulse Width<300us, Duty Cycle<1.0%
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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MPS918
Symbol
Parameter
Units
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC=4.0mAdc, CE=10Vdc, f=100MHz) Output Capacitance Cobo CB=0, f=1.0MHz) CB=10Vdc, f=1.0MHz) Cibp Input Capacitance =0.5Vdc, IC=0, f=1.0MHz) Small-Signal Current Gain (IC=8.0mAdc, CE=10Vdc, f=1.0KHz) Noise Figure (IC=1.0mAdc, CE=6.0Vdc, =400OHMS, f=60MHz) Pulse Test: Pulse Width<300us, Duty Cycle<1.0% -3.0
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