High current gate drive N-channel MOSFET full bridge Independent contr
|
|
|
Top Searches for this datasheet
A4940 Automotive Full Bridge MOSFET Driver
High current gate drive N-channel MOSFET full bridge Independent control each MOSFET Charge pump supply voltage operation Cross-conduction protection with adjustable dead time supply voltage range Diagnostics output current sleep mode
A4940 full-bridge controller with external N-channel power MOSFETs specifically designed automotive applications with high-power inductive loads such brush motors. unique charge pump regulator provides full gate drive battery voltages down allows A4940 operate with reduced gate drive, down bootstrap capacitor used provide above battery supply voltage required N-channel MOSFETs. unique bootstrap charge management system ensures that bootstrap capacitor always sufficiently charged supply high-side gate drive circuit. Each power MOSFETs controlled independently protected from shoot-through dead time that userconfigured external resistor. Integrated diagnostics provide indication undervoltage overtemperature faults. A4940 supplied 24-pin TSSOP power package with exposed enhanced thermal dissipation (package type LP). lead (Pb) free, with 100% matte leadframe plating (suffix -T).
Package: 24-pin TSSOP with exposed thermal (suffix
scale
Typical Application
FAULT
VBAT
A4940
A4940-DS, Rev.
A4940
Automotive Full Bridge MOSFET Driver
Selection Guide
Part Number
A4940KLPTR-T
Packing
4000 pieces reel
Absolute Maximum Ratings*
Characteristic Load Supply Voltage Logic Supply Voltage Logic Inputs Logic Outputs VREG Pins CP1, RDEAD Pins Pins GHA, Pins GLA, Pins Rating, Human Body Model Rating, Charged Device Model Ambient Operating Temperature Range Continuous Junction Temperature Transient Junction Temperature Storage Temperature Range *With respect ground TJ(max) Tstg Overtemperature event exceeding lifetime duration exceeding guaranteed design characterization Symbol VVREG VCPX VRDEAD VGHX VGLX Q100-002, pins Q100-011, pins Range Notes Rating -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 VSX+15 2000 1000 Unit
Thermal Characteristics require derating maximum conditions, application information
Characteristic
Package Thermal Resistance, Junction Ambient Package Thermal Resistance, Junction
Symbol
Test Conditions*
4-layer based JEDEC standard 2-layer with in.2 copper area each side
Value
Unit
*Additional thermal information available Allegro website
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Functional Block Diagram
Battery
Charge Pump Regulator Diagnostics Protection Bootstrap Monitor RGHA Side Bootstrap Monitor RGLA RGLB RGHB
VREG CREG VBAT
FAULT
CBOOTA
High Side
Control Logic
CBOOTB
High Side
RESET
Side RDEAD AGND
Thermal
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
ELECTRICAL CHARACTERISTICS Valid -40°C 150°C, unless otherwise noted
Characteristics Supply Reference Functional Operating Range1 Range Quiescent Current Quiescent Current IBBQ IBBS IVDDQ IVDDS RESET high, GHx, low, RESET= low, RESET high, outputs RESET IREG IREG VREG Output Voltage VREG IREG IREG Bootstrap Diode Forward Voltage Bootstrap Diode Resistance Bootstrap Diode Current Limit Gate Output Drive Turn-On Time Turn-Off Time Pull-up Resistance Pull-down Resistance Output Voltage Output Voltage Turn-Off Propagation Delay2 Turn-On Propagation Delay2 Propagation Delay Matching Phase Phase Propagation Delay Matching RDS(on)UP RDS(on)DN tp(off) tp(on) Input change unloaded gate output change Input change unloaded gate output change Same phase change Single phase RDEAD tied RDEAD Dead Time2 tDEAD RDEAD RDEAD RDEAD tied CLOAD points CLOAD points 25°C, IGHX -150 150°C, IGHX -150 25°C, IGLX -150 150°C, IGLX -150 Bootstrap capacitor fully charged VREG 18.5 1150 VfBOOT IDBOOT rD(100mA) (VfBOOT(150mA) VfBOOT(50mA)) 12.65 12.65 13.9 13.9 Symbol Test Conditions Min. Typ. Max. Unit
Continued next page.
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued) Valid -40°C 150°C, unless otherwise noted
Characteristics Logic Inputs Outputs FAULT Output (Open drain) FAULT Output Leakage Current3 RDEAD Current3 Input Voltage Input High Voltage Input Hysteresis Input Current (Except RESET)3 Input Pull-down Resistor (RESET) RESET Pulse Time Protection VREG Undervoltage Lockout Bootstrap Undervoltage Bootstrap Undervoltage Hysteresis Undervoltage Turn-Off Undervoltage Hysteresis Overtemperature Flag Overtemperature Hysteresis
1Function
Symbol IDEAD VIHYS tRES VREGUVON VBOOTUV VBOOTUVHYS VDDUV VDDUVHYS TJFHYS falling VREG rising
Test Conditions IFAULTOL fault present VFAULTO fault present RDEAD
Min. -200 2.45
Typ.
Max.
Unit %VREG %VREG
2.85
VREGUVOFF VREG falling VBOOT falling,
Temperature increasing Recovery TJFHYS
correct, parameters guaranteed below general limit 2See Gate Drive Timing. 3For input output current specifications, negative current defined coming (sourcing) specified device pin.
Gate Drive Timing Diagrams
tp(off) tDEAD tp(off) Complementary High side only tDEAD tp(on) tp(off) tp(on) tp(off)
side only
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Functional A4940 full-bridge MOSFET driver (pre-driver) requiring unregulated supply logic supply from four gate drives capable driving wide range N-channel power MOSFETs, configured highside drives low-side drives. A4940 provides necessary circuits ensure that gate-source voltage both high-side low-side external MOSFETs above supply voltages down extreme battery voltage drop conditions, correct functional operation guaranteed supply voltages down with reduced gate drive voltage. A4940 provides interface between logic level outputs microcontroller high current, high voltage gate drive N-channel power MOSFETs full-bridge configuration. Typically, power full-bridge will used brush motor control other high current inductor loads. Each MOSFET bridge controlled independent logic level input compatible with logic outputs. Cross-conduction (shootthrough) external bridge avoided adjustable dead time. power sleep mode allows A4940, power bridge, load remain connected vehicle battery supply without need additional supply switch. A4940 provides single fault flag indicate undervoltage overtemperature conditions. Power Supplies power supply connections required, logic interface, analog output drive sections. logic supply, connected VDD, allows flexibility logic interface. main power supply should connected through reverse voltage protection circuit. Both supplies should decoupled with ceramic capacitors connected close supply ground pins. A4940 operates within specified parameters with supply from will function correctly with supply down This provides very rugged solution harsh automotive environment. Gate Drives A4940 designed drive external, on-resistance, power N-channel MOSFETs. supplies large transient currents necessary quickly charge discharge external MOSFET gate capacitance order reduce dissipation MOSFET during switching. charge discharge rate controlled using external resistor series with connection gate MOSFET. Gate Drive Voltage Regulation gate drives powered internal regulator, which limits supply drives therefore maximum gate voltage. When supply greater than about regulator simple linear regulator. Below regulated supply maintained charge pump boost converter, which requires pump capacitor connected between pins. This capacitor must have minimum value typically regulated voltage, typical, available VREG pin. sufficiently large storage capacitor must connected this provide transient charging current low-side drives bootstrap capacitors. Pins These low-side gate drive outputs external N-channel MOSFETs. External resistors between gate drive output gate connection MOSFET close possible MOSFET) used control slew rate seen gate, thereby providing some control di/dt dv/dt outputs. going high turns upper half drive, sourcing current gate lowside MOSFET external power bridge, turning going turns lower half drive, sinking current from external MOSFET gate circuit pin, turning MOSFET. Pins Directly connected motor, these terminals sense voltages switched across load. These terminals also connected negative side bootstrap capacitors negative supply connections floating high-side drives. discharge current from high-side MOSFET gate capacitance flows through these connections, which should have impedance circuit connections MOSFET bridge. Pins These terminals high-side gate drive outputs external N-channel MOSFETs. External resistors between gate drive output gate connection MOSFET close possible MOSFET) used control slew rate seen gate, thereby controlling di/dt dv/dt outputs. going high turns
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
upper half drive, sourcing current gate high-side MOSFET external motor-driving bridge, turning going turns lower half drive, sinking current from external MOSFET gate circuit corresponding pin, turning MOSFET. Pins These high-side connections bootstrap capacitors positive supply high-side gate drives. bootstrap capacitors charged approximately VREG when associated output terminal low. When output swings high, charge bootstrap capacitor causes voltage corresponding terminal rise with output provide boosted gate voltage needed high-side MOSFETs. RDEAD This controls internal generation dead time during MOSFET switching. Cross-conduction prevented gate drive circuits, which introduce dead time, tDEAD, between switching MOSFET complementary MOSFET When external resistor greater than connected between RDEAD AGND, dead time derived from resistor value. When RDEAD connected directly VDD, tDEAD defaults value typical. Logic Control Inputs Four voltage-level digital inputs provide control gate drives. These logic inputs have typical hysteresis improve noise performance. They provide individual direct control over each power MOSFET, subject cross-conduction prevention, used together provide fast decay slow decay with high-side low-side recirculation. AHI, ALO, Pins These directly control gate drives. inputs control high-side drives Table Input Logic
Setting
RESET
inputs control low-side drives. Internal lockout logic ensures that high-side output drive low-side output drive cannot active simultaneously. Table shows logic truth table. RESET This active-low input, when active allows A4940 enter sleep mode. When RESET held low, regulator internal circuitry disabled A4940 enters sleep mode. Before fully entering sleep mode, there short delay while regulator decoupling storage capacitors discharge. This typically takes milliseconds, depending application conditions component values. During sleep mode, current consumption from supply reduced minimal level. addition, latched faults corresponding fault flags cleared. When A4940 coming sleep mode, protection logic ensures that gate drive outputs until charge pump reaches correct operating condition. charge pump stabilizes approximately under nominal conditions. RESET used also clear latched fault flags without entering sleep mode. hold RESET reset pulse time, tRES This clears latched bootstrap capacitor undervoltage fault that disables outputs. Note that A4940 configured start without external logic input. pull RESET means external resistor. resistor value should between Diagnostics Several diagnostic features integrated into A4940 provide indication fault conditions. addition system wide faults such undervoltage overtemperature, A4940 integrates individual bootstrap voltage monitors each bootstrap capacitor.
Mode Operation High side MOSFET conducting Side MOSFET conducting Side MOSFET conducting cross-conduction prevention High side side gate drives inactive, MOSFETs
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
FAULT This open drain output fault flag, which indicates fault condition state, shown table must pulled with external resistor, typically Fault States Overtemperature junction temperature exceeds over-temperature threshold, 170°C typical, A4940 will enter overtemperature fault state FAULT will low. overtemperature fault state, FAULT, will only cleared when temperature drops below recovery level defined TJFHYS. circuitry will disabled. External control circuits must take action limit power dissipation some prevent overtemperature damage A4940 chip unpredictable device operation. VREG Undervoltage VREG supplies low-side gate driver bootstrap charge current. critical ensure that voltages sufficiently high before enabling outputs. voltage VREG, VREG drops below falling VREG undervoltage lockout threshold, VREGUVOFF, then A4940 will enter VREG undervoltage fault state. this fault state FAULT will low, outputs will disabled. VREG undervoltage fault state fault flags will cleared when VREG rises above rising VREG undervoltage lockout threshold, VREGUVON. VREG undervoltage monitor circuit active during powerup, A4940 remains VREG undervoltage fault state until VREG greater than rising VREG undervoltage lockout threshold, VREGUVON. Bootstrap Capacitor Undervoltage A4940 monitors voltage across individual bootstrap capacitors ensure they have sufficient charge supply current pulse high-
side drive. Before high-side drive turned voltage across associated bootstrap capacitor must higher than turn-on voltage limit. this case, then A4940 will start bootstrap charge cycle activating complementary low-side drive. Under normal circumstances, this will charge bootstrap capacitor above turn-on voltage microseconds high-side drive will then enabled. bootstrap voltage monitor remains active while high-side drive active and, voltage drops below turn-off voltage, charge cycle will initiated. either case, there fault that prevents bootstrap capacitor charging, then charge cycle will timeout, FAULT will low, outputs will disabled. bootstrap undervoltage fault state remains latched until RESET low. Undervoltage logic supply monitored ensure correct logical operation. voltage VDD, VDD, drops below falling undervoltage lockout threshold, VDDUVOFF then A4940 will enter undervoltage fault state. this fault state, FAULT will low, outputs will disabled. addition, because state other reported faults cannot guaranteed, fault states reset replaced undervoltage fault state. example, undervoltage will reset existing boostrap undervoltage fault condition replace with undervoltage fault. undervoltage fault state fault flag will cleared when rises above rising undervoltage lockout threshold defined VDDUVOFF +VDDUVHYS. undervoltage monitor circuit active during power-up, A4940 remains undervoltage fault state until greater than rising undervoltage lockout threshold, VDDUVOFF +VDDUVHYS.
Table Fault Definitions
FAULT Setting High Fault Description Fault Overtemperature undervoltage VREG undervoltage Bootstrap undervoltage Disable Outputs* Fault Latched
*Yes indicates gate drives low, MOSFETs off.
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Application Information
Dead Time prevent cross-conduction (shoot-through) phase power MOSFET bridge, necessary have dead time delay, tDEAD between high-side low-side turn-off next complementary turn-on event. potential cross-conduction occurs when complementary high-side low-side pair MOSFETs switched same time; example, when using synchronous rectification after bootstrap capacitor charging cycle. A4940, dead time both phases single dead-time resistor, RDEAD, between RDEAD AGND pins. RDEAD between 25°C, value tDEAD (ns), approximated maximum dead time typical connecting RDEAD directly VDD. Alternatively, dead time A4940 disabled connecting RDEAD directly GND. this case required dead time must supplied external controller. choice power MOSFET external series gate resistance determine selection dead-time resistor, RDEAD. dead time should long enough ensure that MOSFET phase stopped conducting before complementary MOSFET starts conducting. This should also take into account tolerance variation MOSFET gate capacitance, series gate resistance, on-resistance A4940 internal drives. Dead time will present only on-command MOSFET occurs within tDEAD after off-command complementary MOSFET. case where side phase drive permanently off, example when using diode rectification with slow decay, then dead time will occur. this case gate drive will turn within specified propagation delay after corresponding phase input goes high. (Refer Gate Drive Timing diagrams.) Braking A4940 used perform dynamic braking forcing low-side MOSFETs high-side MOSFETs (ALO=BLO=1, AHI=BHI=0) conversely, forcing lowside high-side (ALO=BLO=0, AHI= BHI=1). This effectively short-circuits back motor, creating breaking torque. During braking, load current approximated IBRAKE Vbemf
DEAD
7200 RDEAD
where RDEAD Figure illustrates relationship tDEAD RDEAD with greatest accuracy obtained values RDEAD between IDEAD current estimated IDEAD RDEAD
tDEAD RDEAD
where Vbemf voltage generated motor resistance phase winding. Care must taken during braking ensure that maximum ratings power MOSFETs exceeded. Dynamic braking equivalent slow decay with synchronous rectification.
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
Figure Dead time versus values RDEAD (full range).
A4940
Automotive Full Bridge MOSFET Driver
during charge transfer, which should less. capacitor charged whenever pulled current flows from VREG through internal bootstrap diode circuit CBOOT. Bootstrap Charge Management A4940 provides automatic bootstrap capacitor charge management. bootstrap capacitor voltage each phase continuously checked ensure that above bootstrap under-voltage threshold, VBOOTUV. bootstrap capacitor voltage drops below this threshold, when corresponding high-side active, A4940 will turn necessary low-side MOSFET, continue charging until bootstrap capacitor exceeds undervoltage threshold plus hysteresis, VBOOTUV VBOOTUVHYS bootstrap capacitor voltage below threshold, when corresponding high-side commanded turn A4940 will attempt turn high-side MOSFET, will turn necessary low-side MOSFET charge bootstrap capacitor until exceeds undervoltage threshold plus hysteresis. minimum charge time typically longer very large values bootstrap capacitor (>1000 nF). bootstrap capacitor voltage does reach threshold within approximately undervoltage fault will flagged. VREG Capacitor Selection internal reference, VREG supplies current low-side gate drive circuits charging current bootstrap capacitors. When low-side MOSFET turned gatedrive circuit will provide high transient current gate that necessary turn MOSFET quickly. This current, which several hundred milliamperes, cannot provided directly limited output VREG regulator, must supplied external capacitor connected VREG pin. turn-on current high-side MOSFET similar value that low-side MOSFET, mainly supplied bootstrap capacitor. However bootstrap capacitor must then recharged from VREG regulator output. Unfortunately bootstrap recharge occur very short time after low-side turn-on occurs. This requires that value capacitor connected between VREG AGND should high enough minimize transient voltage drop VREG combination low-side MOSFET turn-on bootstrap capacitor recharge. value CBOOT reasonable value. maximum working voltage will never exceed VREG, capacitor rated This capacitor should placed close possible VREG pin.
Bootstrap Capacitor Selection bootstrap capacitors, CBOOTx, must correctly selected ensure proper operation A4940. capacitances high, time will wasted charging capacitor, resulting limit maximum duty cycle frequency. capacitances low, there large voltage drop time charge transferred from CBOOTx MOSFET gate, charge sharing. keep this voltage drop small, charge bootstrap capacitor, QBOOT, should much larger than charge required gate MOSFET, QGATE. factor reasonable value, following formula used calculate value CBOOT: QBOOT CBOOT QGATE CBOOT QGATE VBOOT VBOOT
where VBOOT voltage across bootstrap capacitor. voltage drop across bootstrap capacitor MOSFET being turned approximated QGATE CBOOT
factor would approximately VBOOT maximum voltage across bootstrap capacitor under normal operating conditions VREG(max). most applications, with good ceramic capacitor working voltage limited Bootstrap Charging good practice ensure high side bootstrap capacitor completely charged before high side cycle requested. time required charge capacitor, tCHARGE (s), approximated tCHARGE CBOOT
where CBOOT value bootstrap capacitor, required voltage bootstrap capacitor. power-up when drives have been disabled long time, bootstrap capacitor completely discharged. this case considered full high-side drive voltage, Otherwise, amount voltage dropped
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
recommendations regarding some these considerations: A4940 ground, GND, high-current return external MOSFETs should return separately negative side motor supply filtering capacitor. This minimizes effect switching noise device logic analog reference. exposed thermal should connected form part Controller Supply ground (see figure Minimize stray inductance using short, wide copper traces drain source terminals power MOSFETs. This includes motor lead connections, input power bus, common source low-side power MOSFETs. This will minimize voltages induced fast switching large load currents. Consider small (100 ceramic decoupling capacitors across sources drains power MOSFETs limit fast transient voltage spikes caused inductance circuit trace. ground connection RDEAD should connected independently directly AGND pin. This sensitive component should never connected directly supply common common ground plane. must referenced directly AGND pin. Supply decoupling VBB, VREG, should connected Controller Supply ground which independently connected close pin. decoupling capacitors should also connected close possible relevant supply pin. Note that above only recommendations. Each application different encounter different sensitivities. driver running amps will less susceptible than running with each design should tested maximum current ensure parasitic effects eliminated.
Supply Decoupling Because this switching circuit, there current spikes from supplies switching points. with such circuits, power supply connections should decoupled with ceramic capacitor, typically between supply ground. These capacitors should connected close possible device supply pins, VBB, ground pin, GND. Power Dissipation applications where high ambient temperature expected on-chip power dissipation become critical factor. Careful attention should paid ensure operating conditions allow A4940 remain safe range junction temperature. power consumed A4940, estimated PBIAS +PCPUMP PSWITCHING given PBIAS PCPUMP VBB) VREG) PCPUMP (VBB VREG) QGATE fPWM PSWITCHING QGATE VREG fPWM Ratio Ratio (RGATE where quantity MOSFETs switching during cycle. slow decay with diode recirculation, slow decay with synchronous rectification fast decay with diode recirculation, fast decay with synchronous rectification. Layout Recommendations Careful consideration must given layout when designing high frequency, fast switching, high current circuits. following
Optional reverse battery protection VREG A4940 RDEAD RDEAD Supply
Motor
AGND Power Ground Supply Common
Controller Supply Ground
Figure Supply routing suggestions
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Input Output Structures
VREG VREG
Supply protection structures
FAULT RESET
8.5V
Gate drive outputs
FAULT outputs
1.2V
RESET input
RDEAD
8.5V
8.5V
Logic inputs: pull-down resistor
RDEAD
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Pin-out Diagram
RESET VREG FAULT RDEAD AGND
Terminal List
Number AGND FAULT RDEAD RESET VREG Name 2,15,16 Ground Reference Control Input High Side Control Input Side Control Input High Side Control Input Side Bootstrap Capacitor Bootstrap Capacitor Pump Capacitor Pump Capacitor Fault Output High-side Gate Drive High-side Gate Drive Low-side Gate Drive Low-side Gate Drive Ground Exposed thermal dissipation, connect Dead time setting input Reset Input Load Connection Load Connection Main Supply Logic Supply Regulated Function
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
A4940
Automotive Full Bridge MOSFET Driver
Package 24-Pin TSSOP with Exposed Thermal
7.80±0.10
0.20 0.09
0.45
0.65
4.40±0.10 6.40±0.20 0.60 ±0.15 1.00 3.00 6.10
4.32
0.25 SEATING PLANE SEATING PLANE GAUGE PLANE
1.65
4.32 Layout Reference View
0.10 0.30 0.19 0.65 0.15 0.00
1.20
Reference Only; tooling (reference MO-153 ADT) Dimensions millimeters Dimensions exclusive mold flash, gate burrs, dambar protrusions Exact case lead configuration supplier discretion within limits shown Terminal mark area Exposed thermal (bottom surface); dimensions vary with device Reference land pattern layout (reference IPC7351 TSOP65P640X120-25M); pads minimum 0.20 from adjacent pads; adjust necessary meet application process requirements layout tolerances; when mounting multilayer PCB, thermal vias exposed thermal land improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5)
Copyright ©2009, Allegro MicroSystems, Inc. products described here manufactured under more U.S. patents U.S. patents pending. Allegro MicroSystems, Inc. reserves right make, from time time, such departures from detail specifications required permit improvements performance, reliability, manufacturability products. Before placing order, user cautioned verify that information being relied upon current. Allegro's products used life support devices systems, failure Allegro product reasonably expected cause failure that life support device system, affect safety effectiveness that device system. information included herein believed accurate reliable. However, Allegro MicroSystems, Inc. assumes responsibility use; infringement patents other rights third parties which result from use. latest version this document, visit website: www.allegromicro.com
Allegro MicroSystems, Inc. Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
Other recent searches
TLP841 - TLP841 TLP841 Datasheet
STD4A60 - STD4A60 STD4A60 Datasheet
SF0767DL02252S - SF0767DL02252S SF0767DL02252S Datasheet
PM7367 - PM7367 PM7367 Datasheet
LPS3008 - LPS3008 LPS3008 Datasheet
HT1620 - HT1620 HT1620 Datasheet
FDS6930A - FDS6930A FDS6930A Datasheet
DLP2232ML-G - DLP2232ML-G DLP2232ML-G Datasheet
BB101M - BB101M BB101M Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
