AO4447/L uses advanced trench technology provide excellent RDS(ON), ul
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AO4447 P-Channel Enhancement Mode Field Effect Transistor
AO4447/L uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch. device protected. AO4447 AO4447L electrically identical. -RoHS Compliant -AO4447L Halogen Free
-30V (VGS -10V) RDS(ON) 7.5m (VGS -10V) RDS(ON) (VGS -4V) Rating: Tested! Ciss,Coss,Crss Tested
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation
Maximum -13.6
Units
TA=25°C TA=70°C TSTG
TA=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-15A RDS(ON) Static Drain-Source On-Resistance VGS=-4V, ID=-13A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -0.9 -0.69 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88.8 VGS=-10V, VDS=-15V, ID=-15A 45.2 10.1 19.4 VGS=-10V, VDS=-15V, RL=1.7, RGEN=3 IF=-15A, dI/dt=100A/µs 11.5 46.6 67.7 6600 -1.25 -1.6 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Qg(4.5V) Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using <300µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. F.The current rating based thermal resistance rating. ratings based frequency duty cycles such that Tj(start)=25C each pulse. Rev6: 2008 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -VDS (Volts) On-Region Characteristics Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature VGS=-4V ID=-13A VGS=-2.5V -VGS(Volts) Figure Transfer Characteristics -3.5V -ID(A) 25°C 125°C VDS=-5V
RDS(ON)
VGS=-4V
VGS=-10V ID=-15A
VGS=-10V Figure On-Resistance Drain Current Gate Voltage
RDS(ON) 125°C -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-15A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 -VSD (Volts) Figure Body-Diode Characteristics 125°C
25°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-15V ID=-15A Capacitance (pF) 8000 7000 6000 5000 4000 3000 2000 1000 (nC) Figure Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 (Amps) 10µs 100µs Power 10ms 0.1s TJ(Max)=150°C TA=25°C -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
-VGS (Volts)
Coss
TJ(Max)=150°C TA=25°C
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.01
Single Pulse 0.0001 0.001 0.01 1000
0.01 0.00001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
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