TO-92 Plastic-Encapsulate Transistors Capable 0.31Watts(Tamb=25OC) Pow
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S9018
TO-92 Plastic-Encapsulate Transistors Capable 0.31Watts(Tamb=25OC) Power Dissipation. Collector-current 0.05A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code: S9018
Silicon Transistors
TO-92
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=20Vdc, Collector Cutoff Current (VCE=15Vdc, Emitter Cutoff Current (VEB =3.0Vdc, IC=0) Current Gain (IC=1.0mAdc, CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=10mAdc, =1.0mAdc) Base-Emitter Saturation Voltage (IC=10mAdc, =1.0mAdc) Transistor Frequency (IC=5.0mAdc, CE=5.0Vdc, f=400MHz) 70-108 97-146 -Max -0.1 Units uAdc uAdc uAdc
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
CHARACTERISTICS
VCE(sat) VBE(sat) -270 -Vdc
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
-MHz
INCHES .170 .170 .550 .010 .130 .010
CLASSIFICATION
Rank Range 130-200
.190 .190 .590 .020 .160 .104
4.33 4.30 13.97 0.36 3.30 2.44
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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