TO-92 Plastic-Encapsulate Transistors Capable 0.4Watts(Tamb=25 Power D

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TO-92 Plastic-Encapsulate Transistors Capable 0.4Watts(Tamb=25 Power D

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S9014
TO-92 Plastic-Encapsulate Transistors Capable 0.4Watts(Tamb=25 Power Dissipation. Collector-current 0.1A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code: S9014
Silicon Transistors
TO-92
Configuration
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, Collector Cutoff Current (VCE =35Vdc, Emitter Cutoff Current (VEB =3.0Vdc, IC=0) Current Gain (IC=1.0mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, =5.0mAdc) Transistor Frequency (IC=10mAdc, VCE=5.0Vdc, f=30MHz) -Max -0.1 Units uAdc uAdc uAdc
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
CHARACTERISTICS
VCE(sat) VBE(sat) -1000 -Vdc
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
-MHz
INCHES .170 .170 .550 .010 .130 .010
CLASSIFICATION
Rank Range 120-200 200-400 400-600
.190 .190 .590 .020 .160 .104
4.33 4.30 13.97 0.36 3.30 2.44
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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TO-92 Plastic-Encapsulate Transistors Capable 0.4Watts(Tamb=25 Power D

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