TO-92 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Power
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S9013
TO-92 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Power Dissipation. Collector-current 0.5A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code: S9013
Silicon Transistors
TO-92
Configuration
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, Collector Cutoff Current (VCE=20Vdc, Emitter Cutoff Current (VEB =5.0Vdc, IC=0) Current Gain (IC=50mAdc, CE=1.0Vdc) Current Gain (IC=500mAdc, CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, =50mAdc) Base- Emitter Voltage =100mAdc) Transistor Frequency (IC=20mAdc, CE=6.0Vdc, f=30MHz) 120-150 150-200 -Max -0.1 Units uAdc uAdc uAdc
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(sat) -300 -0.6 -Vdc
INCHES .170 .170 .550 .010 .130 .010
DIMENSIONS 4.33 4.30 13.97 0.36 3.30 2.44
SMALL-SIGNAL CHARACTERISTICS
-MHz
CLASSIFICATION
Rank Range 190-300
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
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