TO-92 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Power
|
|
|
Top Searches for this datasheet
S8050
TO-92 Plastic-Encapsulate Transistors Capable 0.625Watts(Tamb=25 Power Dissipation. Collector-current 0.5A Collector-base Voltage Operating storage junction temperature range: -55OC +150 Marking Code: S8050
Silicon Transistors
TO-92
Configuration
Electrical Characteristics 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, Collector-Emitter Breakdown Voltage (IC=0.1mAdc, Emitter-Base Breakdown Voltage =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, Collector Cutoff Current (VCE=20Vdc, Emitter Cutoff Current (VEB =3.0Vdc, IC=0) Current Gain (IC=50mAdc, CE=1.0Vdc) Current Gain (IC=500mAdc, CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, =50mAdc) Base- Emitter Voltage =100mAdc) Transistor Frequency (IC=20mAdc, CE=6.0Vdc, f=30MHz) Rank Range 120-200 -Max -0.1 Units uAdc uAdc uAdc
CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(sat) -300 -0.6 -Vdc
INCHES .170 .170 .550 .010 .130 .010
DIMENSIONS 4.33 4.30 13.97 0.36 3.30 2.44
SMALL-SIGNAL CHARACTERISTICS
-MHz
CLASSIFICATION
160-300
.190 .190 .590 .020 .160 .104
4.83 4.83 14.97 0.56 3.96 2.64
NOTE
www.cnelectr.com
Other recent searches
RKV600KP - RKV600KP RKV600KP Datasheet
MAX4814E - MAX4814E MAX4814E Datasheet
MAX3845 - MAX3845 MAX3845 Datasheet
HWS600 - HWS600 HWS600 Datasheet
FMEN-220A - FMEN-220A FMEN-220A Datasheet
DS05-11031-2E - DS05-11031-2E DS05-11031-2E Datasheet
CN015 - CN015 CN015 Datasheet
2SK2764-01R - 2SK2764-01R 2SK2764-01R Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
